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Other articles related with "light-emitting diodes"：
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103301 |
Qun Zhang(张群), Xiaofei Wang(王晓菲), Zhimin Wu(吴智敏), Xiaofang Li(李小芳), Kai Zhang(张凯), Yuzhi Song(宋玉志), Jianzhong Fan(范建忠), Chuan-Kui Wang(王传奎), and Lili Lin(蔺丽丽) |
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Effect of aggregation on thermally activated delayed fluorescence and ultralong organic phosphorescence: QM/MM study |
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Chin. Phys. B
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18507 |
Yuhui Dong(董宇辉), Danni Yan(严丹妮), Shuai Yang(杨帅), Naiwei Wei(魏乃炜),Yousheng Zou(邹友生), and Haibo Zeng(曾海波) |
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Ion migration in metal halide perovskite QLEDs and its inhibition |
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Chin. Phys. B
2023 Vol.32 (1): 18507-018507
[Abstract]
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123302 |
Mu-Zhen Li(李慕臻), Fei-Yan Li(李飞雁), Qun Zhang(张群), Kai Zhang(张凯), Yu-Zhi Song(宋玉志), Jian-Zhong Fan(范建忠), Chuan-Kui Wang(王传奎), and Li-Li Lin(蔺丽丽) |
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Theoretical verification of intermolecular hydrogen bond induced thermally activated delayed fluorescence in SOBF-Ome |
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Chin. Phys. B
2021 Vol.30 (12): 123302-123302
[Abstract]
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88502 |
Hang Su(苏杭), Kun Zhu(朱坤), Jing Qin(钦敬), Mengyao Li(李梦瑶), Yulin Zuo(左郁琳), Yunzheng Wang(王允正), Yinggang Wu(吴迎港), Jiawei Cao(曹佳维), and Guolong Li(李国龙) |
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Large-area fabrication: The next target of perovskite light-emitting diodes |
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Chin. Phys. B
2021 Vol.30 (8): 88502-088502
[Abstract]
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[HTML 1 KB]
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(248)
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128503 |
Saihu Pan(潘赛虎), Zhiqiang Zhu(朱志强), Kangping Liu(刘康平), Hang Yu(于航), Yingjie Liao(廖英杰), Bin Wei(魏斌), Redouane Borsali, and Kunping Guo(郭坤平) |
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Reliability of organic light-emitting diodes in low-temperature environment |
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Chin. Phys. B
2020 Vol.29 (12): 128503-
[Abstract]
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(303)
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18503 |
Byung-Ryool Hyun, Mikita Marus, Huaying Zhong(钟华英), Depeng Li(李德鹏), Haochen Liu(刘皓宸), Yue Xie(谢阅), Weon-kyu Koh, Bing Xu(徐冰), Yanjun Liu(刘言军), Xiao Wei Sun(孙小卫) |
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Infrared light-emitting diodes based on colloidal PbSe/PbS core/shell nanocrystals |
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Chin. Phys. B
2020 Vol.29 (1): 18503-018503
[Abstract]
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118103 |
Qianqian Wu(吴倩倩), Fan Cao(曹璠), Lingmei Kong(孔令媚), Xuyong Yang(杨绪勇) |
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InP quantum dots-based electroluminescent devices |
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Chin. Phys. B
2019 Vol.28 (11): 118103-118103
[Abstract]
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(332)
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107803 |
Chang-Fu Li(李长富), Kai-Ju Shi(时凯居), Ming-Sheng Xu(徐明升), Xian-Gang Xu(徐现刚), Zi-Wu Ji(冀子武) |
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Photoluminescence properties of blue and green multiple InGaN/GaN quantum wells |
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Chin. Phys. B
2019 Vol.28 (10): 107803-107803
[Abstract]
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87802 |
Qi Wang(王琦), Guo-Dong Yuan(袁国栋), Wen-Qiang Liu(刘文强), Shuai Zhao(赵帅), Lu Zhang(张璐), Zhi-Qiang Liu(刘志强), Jun-Xi Wang(王军喜), Jin-Min Li(李晋闽) |
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Monolithic semi-polar (1101) InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate |
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Chin. Phys. B
2019 Vol.28 (8): 87802-087802
[Abstract]
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38502 |
Yan-Li Wang(王燕丽), Pei-Xian Li(李培咸), Sheng-Rui Xu(许晟瑞), Xiao-Wei Zhou(周小伟), Xin-Yu Zhang(张心禹), Si-Yu Jiang(姜思宇), Ru-Xue Huang(黄茹雪), Yang Liu(刘洋), Ya-Li Zi(訾亚丽), Jin-Xing Wu(吴金星), Yue Hao(郝跃) |
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Double superlattice structure for improving the performance of ultraviolet light-emitting diodes |
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Chin. Phys. B
2019 Vol.28 (3): 38502-038502
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18503 |
Lin-Yuan Wang(王林媛), Wei-Dong Song(宋伟东), Wen-Xiao Hu(胡文晓), Guang Li(李光), Xing-Jun Luo(罗幸君), Hu Wang(汪虎), Jia-Kai Xiao(肖稼凯), Jia-Qi Guo(郭佳琦), Xing-Fu Wang(王幸福), Rui Hao(郝锐), Han-Xiang Yi(易翰翔), Qi-Bao Wu(吴启保), Shu-Ti Li(李述体) |
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Efficiency enhancement of ultraviolet light-emitting diodes with segmentally graded p-type AlGaN layer |
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Chin. Phys. B
2019 Vol.28 (1): 18503-018503
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114401 |
Jun-Tian Tan(谭竣天), Shu-Fang Zhang(张淑芳), Ming-Can Qian(钱明灿), Hai-Jun Luo(罗海军), Fang Wu(吴芳), Xing-Ming Long(龙兴明), Liang Fang(方亮), Da-Peng Wei(魏大鹏), Bao-Shan Hu(胡宝山) |
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Effect of graphene/ZnO hybrid transparent electrode on characteristics of GaN light-emitting diodes |
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Chin. Phys. B
2018 Vol.27 (11): 114401-114401
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86101 |
Abida Perveen, Xin Zhang(张欣), Jia-Lun Tang(汤加仑), Deng-Bao Han(韩登宝), Shuai Chang(常帅), Luo-Gen Deng(邓罗根), Wen-Yu Ji(纪文宇), Hai-Zheng Zhong(钟海政) |
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Sputtered gold nanoparticles enhanced quantum dot light-emitting diodes |
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Chin. Phys. B
2018 Vol.27 (8): 86101-086101
[Abstract]
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78102 |
Ya-Chuan Liang(梁亚川), Kai-Kai Liu(刘凯凯), Ying-Jie Lu(卢英杰), Qi Zhao(赵琪), Chong-Xin Shan(单崇新) |
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Silica encapsulated ZnO quantum dot-phosphor nanocomposites: Sol-gel preparation and white light-emitting device application |
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Chin. Phys. B
2018 Vol.27 (7): 78102-078102
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37804 |
Jing-Jing Yang(杨景景), Qing-Qing Fang(方庆清), Wen-Han Du(杜文汉), Ke-Ke Zhang, Da-Shun Dong(董大舜) |
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High mobility ultrathin ZnO p-n homojunction modulated by Zn0.85Mg0.15O quantum barriers |
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Chin. Phys. B
2018 Vol.27 (3): 37804-037804
[Abstract]
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104402 |
Ming-Can Qian(钱明灿), Shu-Fang Zhang(张淑芳), Hai-Jun Luo(罗海军), Xing-Ming Long(龙兴明), Fang Wu(吴芳), Liang Fang(方亮), Da-Peng Wei(魏大鹏), Fan-Ming Meng(孟凡明), Bao-Shan Hu(胡宝山) |
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Simulation on effect of metal/graphene hybrid transparent electrode on characteristics of GaN light emitting diodes |
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Chin. Phys. B
2017 Vol.26 (10): 104402-104402
[Abstract]
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87311 |
Yangfeng Li(李阳锋), Yang Jiang(江洋), Junhui Die(迭俊珲), Caiwei Wang(王彩玮), Shen Yan(严珅), Ziguang Ma(马紫光), Haiyan Wu(吴海燕), Lu Wang(王禄), Haiqiang Jia(贾海强), Wenxin Wang(王文新), Hong Chen(陈弘) |
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Improvement of green InGaN-based LEDs efficiency using a novel quantum well structure |
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Chin. Phys. B
2017 Vol.26 (8): 87311-087311
[Abstract]
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78503 |
Muna E. Raypah, Mutharasu Devarajan, Fauziah Sulaiman |
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Evaluation of current and temperature effects on optical performance of InGaAlP thin-film SMD LED mounted on different substrate packages |
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Chin. Phys. B
2017 Vol.26 (7): 78503-078503
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28502 |
Min Guo(郭敏), Zhi-You Guo(郭志友), Jing Huang(黄晶), Yang Liu(刘洋), Shun-Yu Yao(姚舜禹) |
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Improvement of the carrier distribution with GaN/InGaN/AlGaN/InGaN/GaN composition-graded barrier for InGaN-based blue light-emitting diode |
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Chin. Phys. B
2017 Vol.26 (2): 28502-028502
[Abstract]
(662)
[HTML 1 KB]
[PDF 385 KB]
(332)
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118506 |
Jia-Yong Lin(林家勇), Yan-Li Pei(裴艳丽), Yi Zhuo(卓毅), Zi-Min Chen(陈梓敏), Rui-Qin Hu(胡锐钦), Guang-Shuo Cai(蔡广烁), Gang Wang(王钢) |
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High-performance InGaN/GaN MQW LEDs with Al-doped ZnO transparent conductive layers grown by MOCVD using H2O as an oxidizer |
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Chin. Phys. B
2016 Vol.25 (11): 118506-118506
[Abstract]
(775)
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(322)
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117102 |
Qiang Li(李强), Yufeng Li(李虞锋), Minyan Zhang(张敏妍), Wen Ding(丁文), Feng Yun(云峰) |
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Current spreading in GaN-based light-emitting diodes |
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Chin. Phys. B
2016 Vol.25 (11): 117102-117102
[Abstract]
(689)
[HTML 1 KB]
[PDF 1077 KB]
(562)
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78502 |
Yu Zhao(招瑜), Bingfeng Fan(范冰丰), Yiting Chen(陈义廷), Yi Zhuo(卓毅), Zhoujun Pang(庞洲骏), Zhen Liu(刘振), Gang Wang(王钢) |
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Enhanced light extraction of GaN-based light-emitting diodes with periodic textured SiO2 on Al-doped ZnO transparent conductive layer |
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Chin. Phys. B
2016 Vol.25 (7): 78502-078502
[Abstract]
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[HTML 1 KB]
[PDF 486 KB]
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28501 |
Cheng Zhang(张诚), Hui-Qing Sun(孙慧卿), Xu-Na Li(李旭娜), Hao Sun(孙浩), Xuan-Cong Fan(范宣聪), Zhu-Ding Zhang(张柱定), Zhi-You Guo(郭志友) |
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Performance improvement of AlGaN-based deep ultraviolet light-emitting diodes with double electron blocking layers |
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Chin. Phys. B
2016 Vol.25 (2): 28501-028501
[Abstract]
(775)
[HTML 1 KB]
[PDF 488 KB]
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97202 |
Ma Li (马莉), Shen Guang-Di (沈光地), Gao Zhi-Yuan (高志远), Xu Chen (徐晨) |
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Enhanced performances of AlGaInP-based light-emitting diodes with Schottky current blocking layers |
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Chin. Phys. B
2015 Vol.24 (9): 97202-097202
[Abstract]
(790)
[HTML 1 KB]
[PDF 414 KB]
(349)
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68505 |
Guo Xia (郭霞), Liu Qiao-Li (刘巧莉), Li Chong (李冲), Liu Bai (刘白), Dong Jian (董建), Shen Guang-Di (沈光地) |
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Phosphor-free white light-emitting diodes |
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Chin. Phys. B
2015 Vol.24 (6): 68505-068505
[Abstract]
(613)
[HTML 1 KB]
[PDF 469 KB]
(944)
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57802 |
Miao Yan-Qin (苗艳勤), Gao Zhi-Xiang (高志翔), Zhang Ai-Qin (张爱琴), Li Yuan-Hao (李源浩), Wang Hua (王华), Jia Hu-Sheng (贾虎生), Liu Xu-Guang (刘旭光), Tsuboi Taiju |
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High color rendering index white organic light-emitting diode using levofloxacin as blue emitter |
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Chin. Phys. B
2015 Vol.24 (5): 57802-057802
[Abstract]
(735)
[HTML 1 KB]
[PDF 496 KB]
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38503 |
Liu Ming-Gang (柳铭岗), Wang Yun-Qian (王云茜), Yang Yi-Bin (杨亿斌), Lin Xiu-Qi (林秀其), Xiang Peng (向鹏), Chen Wei-Jie (陈伟杰), Han Xiao-Biao (韩小标), Zang Wen-Jie (臧文杰), Liao Qiang (廖强), Lin Jia-Li (林佳利), Luo Hui (罗慧), Wu Zhi-Sheng (吴志盛), Liu Yang (刘扬), Zhang Bai-Jun (张佰君) |
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Performance improvement of GaN-based light-emitting diodes transferred from Si (111) substrate onto electroplating Cu submount with embedded wide p-electrodes |
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Chin. Phys. B
2015 Vol.24 (3): 38503-038503
[Abstract]
(671)
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77802 |
Wei Na (魏娜), Guo Kun-Ping (郭坤平), Zhou Peng-Chao (周朋超), Yu Jian-Ning (于建宁), Wei Bin (魏斌), Zhang Jian-Hua (张建华) |
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Pure blue and white light electroluminescence in a multilayer organic light-emitting diode using a new blue emitter |
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Chin. Phys. B
2014 Vol.23 (7): 77802-077802
[Abstract]
(526)
[HTML 1 KB]
[PDF 2175 KB]
(820)
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28504 |
Wu Kui (吴奎), Wei Tong-Bo (魏同波), Lan Ding (蓝鼎), Zheng Hai-Yang (郑海洋), Wang Jun-Xi (王军喜), Luo Yi (罗毅), Li Jin-Min (李晋闽) |
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Large-scale SiO2 photonic crystal for high efficiency GaN LEDs by nanospherical-lens lithography |
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Chin. Phys. B
2014 Vol.23 (2): 28504-028504
[Abstract]
(651)
[HTML 1 KB]
[PDF 588 KB]
(842)
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28502 |
Yu Xiao-Peng (喻晓鹏), Fan Guang-Han (范广涵), Ding Bin-Bin (丁彬彬), Xiong Jian-Yong (熊建勇), Xiao Yao (肖瑶), Zhang Tao (张涛), Zheng Shu-Wen (郑树文) |
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Performance improvement of GaN-based light-emitting diode with a p-InAlGaN hole injection layer |
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Chin. Phys. B
2014 Vol.23 (2): 28502-028502
[Abstract]
(595)
[HTML 1 KB]
[PDF 947 KB]
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17803 |
Bi Wen-Tao (毕文涛), Wu Xiao-Ming (吴晓明), Hua Yu-Lin (华玉林), Sun Jin-E (孙金娥), Xiao Zhi-Hui (肖志慧), Wang Li (王丽), Yin Shou-Gen (印寿根) |
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Tandem white organic light-emitting diodes adopting a C60：rubrene charge generation layer |
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Chin. Phys. B
2014 Vol.23 (1): 17803-017803
[Abstract]
(567)
[HTML 1 KB]
[PDF 337 KB]
(1329)
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0 |
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Large-scale SiO2 Photonic Crystal for High Efficiency GaN LEDs by Nanospherical-lens Lithography |
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Chin. Phys. B
Vol. (): 0-0
[Abstract]
(36)
[HTML 0 KB]
[PDF 0 KB]
(6)
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128502 |
Zhang Li-Chun (张立春), Zhao Feng-Zhou (赵风周), Wang Fei-Fei (王菲菲), Li Qing-Shan (李清山) |
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Improvement in electroluminescence performance of n-ZnO/Ga2O3/p-GaN heterojunction light-emitting diodes |
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Chin. Phys. B
2013 Vol.22 (12): 128502-128502
[Abstract]
(534)
[HTML 1 KB]
[PDF 487 KB]
(1079)
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118504 |
Xiong Jian-Yong (熊建勇), Zhao Fang (赵芳), Fan Guang-Han (范广涵), Xu Yi-Qin (许毅钦), Liu Xiao-Ping (刘小平), Song Jing-Jing (宋晶晶), Ding Bin-Bin (丁彬彬), Zhang Tao (张涛), Zheng Shu-Wen (郑树文) |
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Efficiency enhancement of an InGaN light-emitting diode with a p-AlGaN/GaN superlattice last quantum barrier |
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Chin. Phys. B
2013 Vol.22 (11): 118504-118504
[Abstract]
(759)
[HTML 1 KB]
[PDF 1726 KB]
(563)
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116801 |
Gao Zhi-Xiang (高志翔), Wang Hua (王华), Hao Yu-Ying (郝玉英), Miao Yan-Qin (苗艳勤), Xu Bing-She (许并社) |
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Improved light extraction of organic light emitting diodes with a nanopillar pattering structure |
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Chin. Phys. B
2013 Vol.22 (11): 116801-116801
[Abstract]
(625)
[HTML 1 KB]
[PDF 3307 KB]
(618)
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108505 |
Xiong Jian-Yong (熊建勇), Xu Yi-Qin (许毅钦), Zhao Fang (赵芳), Song Jing-Jing (宋晶晶), Ding Bin-Bin (丁彬彬), Zheng Shu-Wen (郑树文), Zhang Tao (张涛), Fan Guang-Han (范广涵) |
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Performance enhancement of an InGaN light-emitting diode with an AlGaN/InGaN superlattice electron-blocking layer |
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Chin. Phys. B
2013 Vol.22 (10): 108505-108505
[Abstract]
(692)
[HTML 1 KB]
[PDF 1907 KB]
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98504 |
Wang Xing-Fu (王幸福), Tong Jin-Hui (童金辉), Zhao Bi-Jun (赵璧君), Chen Xin (陈鑫), Ren Zhi-Wei (任志伟), Li Dan-Wei (李丹伟), Zhuo Xiang-Jing (卓祥景), Zhang Jun (章俊), Yi Han-Xiang (易翰翔), Li Shu-Ti (李述体) |
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Efficiency and droop improvement in a blue InGaN-based light emitting diode with a p-InGaN layer inserted in the GaN barriers |
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Chin. Phys. B
2013 Vol.22 (9): 98504-098504
[Abstract]
(784)
[HTML 1 KB]
[PDF 437 KB]
(541)
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88504 |
Wang Tian-Hu (王天虎), Xu Jin-Liang (徐进良) |
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Improved performance of InGaN light-emitting diodes with a novel sawtooth-shaped electron blocking layer |
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Chin. Phys. B
2013 Vol.22 (8): 88504-088504
[Abstract]
(675)
[HTML 1 KB]
[PDF 2681 KB]
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68505 |
Tong Jin-Hui (童金辉), Zhao Bi-Jun (赵璧君), Wang Xing-Fu (王幸福), Chen Xin (陈鑫), Ren Zhi-Wei (任志伟), Li Dan-Wei (李丹伟), Zhuo Xiang-Jing (卓祥景), Zhang Jun (章俊), Yi Han-Xiang (易翰翔), Li Shu-Ti (李述体) |
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Droop improvement in blue InGaN light emitting diode with GaN/InGaN superlattice barriers |
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Chin. Phys. B
2013 Vol.22 (6): 68505-068505
[Abstract]
(663)
[HTML 1 KB]
[PDF 372 KB]
(875)
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18504 |
Chen Jun (陈峻), Fan Guang-Han (范广涵), Zhang Yun-Yan (张运炎) |
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Improvement of characteristics of InGaN light-emitting diode by using a staggered AlGaN electron-blocking layer |
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Chin. Phys. B
2013 Vol.22 (1): 18504-018504
[Abstract]
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[PDF 281 KB]
(630)
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128504 |
Wang Tian-Hu (王天虎), Xu Jin-Liang (徐进良) |
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Improved efficiency droop characteristics in InGaN/GaN light-emitting diode with a novel designed last barrier structure |
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Chin. Phys. B
2012 Vol.21 (12): 128504-128504
[Abstract]
(1209)
[HTML 1 KB]
[PDF 210 KB]
(795)
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98504 |
Tian Hua (田华), Liu Ji-Wen (刘技文), Qiu Kun (仇坤), Song Jun (宋俊), Wang Da-Jian (王达健) |
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Color-converted remote phosphor prototype of multiwavelength excitable borosilicate glass for white light-emitting diodes |
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Chin. Phys. B
2012 Vol.21 (9): 98504-098504
[Abstract]
(1266)
[HTML 1 KB]
[PDF 239 KB]
(773)
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88504 |
Meng Ling-Chuan (孟令川), Lou Zhi-Dong (娄志东), Yang Sheng-Yi (杨盛谊), Hou Yan-Bing (侯延冰), Teng Feng (滕枫), Liu Xiao-Jun (刘小君), Li Yun-Bai (李云白 ) |
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White organic light-emitting diodes based on combined electromer and monomer emission in doubly-doped polymers |
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Chin. Phys. B
2012 Vol.21 (8): 88504-088504
[Abstract]
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68506 |
Wu Le-Juan(仵乐娟), Li Shu-Ti(李述体), Liu Chao(刘超), Wang Hai-Long(王海龙), Lu Tai-Ping(卢太平), Zhang Kang(张康), Xiao Guo-Wei(肖国伟), Zhou Yu-Gang(周玉刚), Zheng Shu-Wen(郑树文), Yin Yi-An(尹以安), and Yang Xiao-Dong(杨孝东) |
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Simulation study of blue InGaN multiple quantum well light-emitting diodes with different hole injection layers |
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Chin. Phys. B
2012 Vol.21 (6): 68506-068506
[Abstract]
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[PDF 172 KB]
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67202 |
Jiao Zhi-Qiang(焦志强), Wu Xiao-Ming(吴晓明), Hua Yu-Lin(华玉林), Mu Xue(穆雪), Bi Wen-Tao(毕文涛), Bai Juan-Juan(白娟娟), and Yin Shou-Gen(印寿根) |
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Improved performance of organic light-emitting diodes with dual electron transporting layers |
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Chin. Phys. B
2012 Vol.21 (6): 67202-067202
[Abstract]
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[HTML 1 KB]
[PDF 407 KB]
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58503 |
Su Yue-Ju(苏跃举), Wu Xiao-Ming(吴晓明), Hua Yu-Lin(华玉林), Shen Li-Ying(申利莹), Jiao Zhi-Qiang(焦志强), Dong Mu-Sen(董木森), and Yin Shou-Gen(印寿根) |
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Highly efficient blue fluorescent OLEDs with doped double emitting layers based on p–n heterojunctions |
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Chin. Phys. B
2012 Vol.21 (5): 58503-058503
[Abstract]
(1747)
[HTML 1 KB]
[PDF 165 KB]
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98503 |
Lu Tai-Ping(卢太平), Li Shu-Ti(李述体), Zhang Kang(张康), Liu Chao(刘超), Xiao Guo-Wei(肖国伟), Zhou Yu-Gang(周玉刚), Zheng Shu-Wen(郑树文), Yin Yi-An(尹以安), Wu Le-Juan(仵乐娟), Wang Hai-Long(王海龙), and Yang Xiao-Dong(杨孝东) |
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The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron blocking layer |
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Chin. Phys. B
2011 Vol.20 (9): 98503-098503
[Abstract]
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[HTML 1 KB]
[PDF 172 KB]
(1769)
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108504 |
Lu Tai-Ping(卢太平), Li Shu-Ti(李述体), Zhang Kang(张康), Liu Chao(刘超), Xiao Guo-Wei(肖国伟), Zhou Yu-Gang(周玉刚), Zheng Shu-Wen(郑树文), Yin Yi-An(尹以安), Wu Le-Juan(仵乐娟), Wang Hai-Long(王海龙), and Yang Xiao-Dong(杨孝东) |
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Blue InGaN light-emitting diodes with dip-shaped quantum wells |
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Chin. Phys. B
2011 Vol.20 (10): 108504-108504
[Abstract]
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[PDF 190 KB]
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68101 |
He An-He(何安和), Zhang Yong(章勇), Zhu Xue-Hui(朱学绘), Chen Xian-Wen(陈献文), Fan Guang-Han(范广涵), and He Miao(何苗) |
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Improved light extraction of GaN-based light-emitting diodes with surface-textured indium tin oxide electrodes by nickel nanoparticle mask dry-etching |
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Chin. Phys. B
2010 Vol.19 (6): 68101-068101
[Abstract]
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37801 |
Chen Fei-Peng(陈飞鹏), Xu Bin(徐斌), Zhao Zu-Jin(赵祖金), Tian Wen-Jing (田文晶), LÜ Ping(吕萍), and Im Chan |
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White organic light-emitting diodes based on electroplex from polyvinyl carbazole and carbazole oligomers blends |
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Chin. Phys. B
2010 Vol.19 (3): 37801-037801
[Abstract]
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[PDF 450 KB]
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37105 |
Wei Bin(魏斌), Liao Ying-Jie (廖英杰), Liu Ji-Zhong (刘纪忠), Lu Lin(路林), Cao Jin(曹进), Wang Jun (王军), and Zhang Jian-Hua (张建华) |
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Dependence of charge trapping of fluorescent and phosphorescent dopants in organic light-emitting diodes on the dye species and current density |
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Chin. Phys. B
2010 Vol.19 (3): 37105-037105
[Abstract]
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702 |
Li Yan (李岩), Zheng Rui-Sheng (郑瑞生), Feng Yu-Chun (冯玉春), Liu Song-Hao (刘颂豪), Niu Han-Ben (牛憨笨) |
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Effects of the microstructure slab with pillars on light extraction of GaN light-emitting diode |
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Chin. Phys. B
2006 Vol.15 (4): 702-707
[Abstract]
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[PDF 720 KB]
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796 |
Peng Ying-Quan (彭应全), Zhang Fu-Jia (张福甲), Song Chang-An (宋长安) |
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Numerical investigations on the current conduction in bilayer organic light-emitting devices with ohmic injection of charge carriers |
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Chin. Phys. B
2003 Vol.12 (7): 796-802
[Abstract]
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