Improved efficiency droop characteristics in InGaN/GaN light-emitting diode with a novel designed last barrier structure

doi:10.1088/1674-1056/21/12/128504

Abstract In this study, the characteristics of the nitride-based light-emitting diodes with different last barrier structures are analysed numerically. The energy band diagrams, electrostatic field near the last quantum barrier, carrier concentration in the quantum well, internal quantum efficiency, and light output power are systematically investigated. The simulation results show that the efficiency droop is markedly improved and the output power is greatly enhanced when the conventional GaN last barrier is replaced by AlGaN barrier with Al composition graded linearly from 0 to 15% in the growth direction. These improvements are attributed to enhanced efficiencies of electron confinement and hole injection caused by the less polarization effect at the last-barrier/electron blocking layer interface when the graded Al composition last barrier is used.

Keywords: light-emitting diodes internal quantum efficiency efficiency droop last barrier

Received: 10 May 2012
Revised: 10 June 2012
Accepted manuscript online:

PACS:	85.60.Jb	(Light-emitting devices)
	85.50.-n	(Dielectric, ferroelectric, and piezoelectric devices)
	87.15.A-	(Theory, modeling, and computer simulation)
	78.60.Fi	(Electroluminescence)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. U1034004 and 50825603) and the Fundamental Research Funds for the Central Universities, China (Grant Nos. 12QX14 and 11ZG01).

Corresponding Authors: Xu Jin-Liang
E-mail: xjl@ncepu.edu.cn

Cite this article:

Wang Tian-Hu (王天虎), Xu Jin-Liang (徐进良) Improved efficiency droop characteristics in InGaN/GaN light-emitting diode with a novel designed last barrier structure 2012 Chin. Phys. B 21 128504

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Improved efficiency droop characteristics in InGaN/GaN light-emitting diode with a novel designed last barrier structure

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