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Chin. Phys. B, 2013, Vol. 22(8): 088504    DOI: 10.1088/1674-1056/22/8/088504
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Improved performance of InGaN light-emitting diodes with a novel sawtooth-shaped electron blocking layer

Wang Tian-Hu (王天虎)a, Xu Jin-Liang (徐进良)b
a Beijing Key Laboratory of New and Renewable Energy, North China Electric Power University, Beijing 102206, China;
b Beijing Key Laboratory of Multiphase Flow and Heat Transfer, North China Electric Power University, Beijing 102206, China
Abstract  A sawtooth-shaped electron blocking layer is proposed to improve the performance of light-emitting diodes (LEDs). The energy band diagram, the electrostatic field in the quantum well, the carrier concentration, the electron leakage, and the internal quantum efficiency are systematically studied. The simulation results show that the LED with a sawtooth-shaped electron blocking layer possesses higher output power and a smaller efficiency droop than the LED with a conventional AlGaN electron blocking layer, which is because the electron confinement is enhanced and the hole injection efficiency is improved by the appropriately modified electron blocking layer energy band.
Keywords:  light-emitting diodes      efficiency droop      electron blocking layer  
Received:  29 October 2012      Revised:  26 February 2013      Accepted manuscript online: 
PACS:  85.60.Jb (Light-emitting devices)  
  85.50.-n (Dielectric, ferroelectric, and piezoelectric devices)  
  87.15.A- (Theory, modeling, and computer simulation)  
  78.60.Fi (Electroluminescence)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. U1034004, 50825603, and 51210011) and the Fundamental Research Funds for the Central Universities, China (Grant No. 12QX14).
Corresponding Authors:  Xu Jin-Liang     E-mail:  xjl@ncepu.edu.cn

Cite this article: 

Wang Tian-Hu (王天虎), Xu Jin-Liang (徐进良) Improved performance of InGaN light-emitting diodes with a novel sawtooth-shaped electron blocking layer 2013 Chin. Phys. B 22 088504

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