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Other articles related with "AlN"：
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127102 |
Yuwei Zhou(周雨威), Minhan Mi(宓珉瀚), Pengfei Wang(王鹏飞), Can Gong(龚灿), Yilin Chen(陈怡霖), Zhihong Chen(陈治宏), Jielong Liu(刘捷龙), Mei Yang(杨眉), Meng Zhang(张濛), Qing Zhu(朱青), Xiaohua Ma(马晓华), and Yue Hao(郝跃) |
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Improved RF power performance of InAlN/GaN HEMT by optimizing rapid thermal annealing process for high-performance low-voltage terminal applications |
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Chin. Phys. B
2023 Vol.32 (12): 127102-127102
[Abstract]
(94)
[HTML 0 KB]
[PDF 2757 KB]
(38)
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37303 |
Jingshu Guo(郭静姝), Jiejie Zhu(祝杰杰), Siyu Liu(刘思雨), Jielong Liu(刘捷龙), Jiahao Xu(徐佳豪), Weiwei Chen(陈伟伟), Yuwei Zhou(周雨威), Xu Zhao(赵旭), Minhan Mi(宓珉瀚), Mei Yang(杨眉), Xiaohua Ma(马晓华), and Yue Hao(郝跃) |
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Low-resistance ohmic contacts on InAlN/GaN heterostructures with MOCVD-regrown n+-InGaN and mask-free regrowth process |
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Chin. Phys. B
2023 Vol.32 (3): 37303-037303
[Abstract]
(279)
[HTML 1 KB]
[PDF 836 KB]
(138)
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26802 |
Chuang Wang(王闯), Xiao-Dong Gao(高晓冬), Di-Di Li(李迪迪), Jing-Jing Chen(陈晶晶), Jia-Fan Chen(陈家凡), Xiao-Ming Dong(董晓鸣), Xiaodan Wang(王晓丹), Jun Huang(黄俊), Xiong-Hui Zeng(曾雄辉), and Ke Xu(徐科) |
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Evolution of microstructure, stress and dislocation of AlN thick film on nanopatterned sapphire substrates by hydride vapor phase epitaxy |
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Chin. Phys. B
2023 Vol.32 (2): 26802-026802
[Abstract]
(246)
[HTML 0 KB]
[PDF 2859 KB]
(85)
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28101 |
Zhen-Zhuo Zhang(张臻琢), Jing Yang(杨静), De-Gang Zhao(赵德刚), Feng Liang(梁锋), Ping Chen(陈平), and Zong-Shun Liu(刘宗顺) |
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Influence of the lattice parameter of the AlN buffer layer on the stress state of GaN film grown on (111) Si |
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Chin. Phys. B
2023 Vol.32 (2): 28101-028101
[Abstract]
(293)
[HTML 1 KB]
[PDF 1419 KB]
(145)
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127701 |
Taofei Pu(蒲涛飞), Shuqiang Liu(刘树强), Xiaobo Li(李小波), Ting-Ting Wang(王婷婷), Jiyao Du(都继瑶), Liuan Li(李柳暗), Liang He(何亮), Xinke Liu(刘新科), and Jin-Ping Ao(敖金平) |
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Normally-off AlGaN/GaN heterojunction field-effect transistors with in-situ AlN gate insulator |
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Chin. Phys. B
2022 Vol.31 (12): 127701-127701
[Abstract]
(285)
[HTML 0 KB]
[PDF 1297 KB]
(62)
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76104 |
Jianwei Ben(贲建伟), Jiangliu Luo(罗江流), Zhichen Lin(林之晨), Xiaojuan Sun(孙晓娟), Xinke Liu(刘新科), and Xiaohua Li(黎晓华) |
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Introducing voids around the interlayer of AlN by high temperature annealing |
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Chin. Phys. B
2022 Vol.31 (7): 76104-076104
[Abstract]
(332)
[HTML 1 KB]
[PDF 1712 KB]
(35)
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76802 |
Jiafan Chen(陈家凡), Jun Huang(黄俊), Didi Li(李迪迪), and Ke Xu(徐科) |
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Porous AlN films grown on C-face SiC by hydride vapor phase epitaxy |
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Chin. Phys. B
2022 Vol.31 (7): 76802-076802
[Abstract]
(360)
[HTML 1 KB]
[PDF 2644 KB]
(79)
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36801 |
Di-Di Li(李迪迪), Jing-Jing Chen(陈晶晶), Xu-Jun Su(苏旭军), Jun Huang(黄俊), Mu-Tong Niu(牛牧童), Jin-Tong Xu(许金通), and Ke Xu(徐科) |
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Preparation of AlN film grown on sputter-deposited and annealed AlN buffer layer via HVPE |
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Chin. Phys. B
2021 Vol.30 (3): 36801-
[Abstract]
(408)
[HTML 1 KB]
[PDF 1193 KB]
(396)
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57307 |
Minhan Mi(宓珉瀚), Meng Zhang(张濛), Sheng Wu(武盛), Ling Yang(杨凌), Bin Hou(侯斌), Yuwei Zhou(周雨威), Lixin Guo(郭立新), Xiaohua Ma(马晓华), Yue Hao(郝跃) |
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High performance InAlN/GaN high electron mobility transistors for low voltage applications |
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Chin. Phys. B
2020 Vol.29 (5): 57307-057307
[Abstract]
(692)
[HTML 1 KB]
[PDF 1214 KB]
(194)
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107301 |
Tie-Cheng Han(韩铁成), Hong-Dong Zhao(赵红东), Lei Yang(杨磊), Yang Wang(王杨) |
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Simulation study of InAlN/GaN high-electron mobility transistor with AlInN back barrier |
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Chin. Phys. B
2017 Vol.26 (10): 107301-107301
[Abstract]
(717)
[HTML 1 KB]
[PDF 349 KB]
(613)
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97104 |
Yan Liu(刘艳), Zhao-Jun Lin(林兆军), Yuan-Jie Lv(吕元杰), Peng Cui(崔鹏), Chen Fu(付晨), Ruilong Han(韩瑞龙), Yu Huo(霍宇), Ming Yang(杨铭) |
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Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors |
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Chin. Phys. B
2017 Vol.26 (9): 97104-097104
[Abstract]
(686)
[HTML 0 KB]
[PDF 409 KB]
(250)
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86103 |
A R Degheidy, E B Elkenany |
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Electronic, optical, and mechanical properties of BN, AlN, and InN with zinc-blende structure under pressure |
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Chin. Phys. B
2017 Vol.26 (8): 86103-086103
[Abstract]
(624)
[HTML 1 KB]
[PDF 507 KB]
(272)
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97503 |
Ruilin Han(韩瑞林), Xiaoyang Chen(陈晓阳), Yu Yan(闫羽) |
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Magnetic properties of AlN monolayer doped with group 1A or 2A nonmagnetic element: First-principles study |
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Chin. Phys. B
2017 Vol.26 (9): 97503-097503
[Abstract]
(653)
[HTML 0 KB]
[PDF 2572 KB]
(297)
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84703 |
Dong-Liang Bian(卞栋梁), Yun Wu(吴云), Min Jia(贾敏), Chang-Bai Long(龙昌柏), Sheng-Bo Jiao(焦胜博) |
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Comparison between AlN and Al2O3 ceramics applied to barrier dielectric of plasma actuator |
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Chin. Phys. B
2017 Vol.26 (8): 84703-084703
[Abstract]
(583)
[HTML 1 KB]
[PDF 1472 KB]
(348)
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47801 |
Qing-Jun Xu(徐庆君), Bin Liu(刘斌), Shi-Ying Zhang(张士英), Tao Tao(陶涛), Zi-Li Xie(谢自力), Xiang-Qian Xiu(修向前), Dun-Jun Chen(陈敦军), Peng Chen(陈鹏), Ping Han(韩平), Rong Zhang(张荣), You-Dou Zheng(郑有炓) |
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Structural characterization of Al0.55Ga0.45N epitaxial layer determined by high resolution x-ray diffraction and transmission electron microscopy |
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Chin. Phys. B
2017 Vol.26 (4): 47801-047801
[Abstract]
(555)
[HTML 1 KB]
[PDF 590 KB]
(396)
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16103 |
Yanxiong E(鄂炎雄), Zhibiao Hao(郝智彪), Jiadong Yu(余佳东), Chao Wu(吴超), Lai Wang(汪莱), Bing Xiong(熊兵), Jian Wang(王健), Yanjun Han(韩彦军), Changzheng Sun(孙长征), Yi Luo(罗毅) |
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Studies on the nucleation of MBE grown III-nitride nanowires on Si |
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Chin. Phys. B
2017 Vol.26 (1): 16103-016103
[Abstract]
(749)
[HTML 1 KB]
[PDF 1671 KB]
(363)
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27502 |
Rui-Lin Han(韩瑞林), Shi-Min Jiang(姜世民), Yu Yan(闫羽) |
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Electronic structures and magnetic properties of Zn- and Cd-doped AlN nanosheets: A first-principles study |
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Chin. Phys. B
2017 Vol.26 (2): 27502-027502
[Abstract]
(616)
[HTML 1 KB]
[PDF 682 KB]
(476)
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57703 |
Feng Liang(梁锋), Ping Chen(陈平), De-Gang Zhao(赵德刚), De-Sheng Jiang(江德生), Zhi-Juan Zhao(赵志娟), Zong-Shun Liu(刘宗顺), Jian-Jun Zhu(朱建军), Jing Yang(杨静), Wei Liu(刘炜), Xiao-Guang He(何晓光), Xiao-Jing Li(李晓静), Xiang Li(李翔), Shuang-Tao Liu(刘双韬), Hui Yang(杨辉), Li-Qun Zhang(张立群), Jian-Ping Liu(刘建平), Yuan-Tao Zhang(张源涛), Guo-Tong Du(杜国同) |
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Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H-SiC |
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Chin. Phys. B
2016 Vol.25 (5): 57703-057703
[Abstract]
(619)
[HTML 1 KB]
[PDF 383 KB]
(354)
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127306 |
Zhang Peng (张鹏), Zhao Sheng-Lei (赵胜雷), Xue Jun-Shuai (薛军帅), Zhu Jie-Jie (祝杰杰), Ma Xiao-Hua (马晓华), Zhang Jin-Cheng (张进成), Hao Yue (郝跃) |
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Investigation of trap states in Al2O3 InAlN/GaN metal-oxide-semiconductor high-electron-mobility transistors |
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Chin. Phys. B
2015 Vol.24 (12): 127306-127306
[Abstract]
(774)
[HTML 1 KB]
[PDF 472 KB]
(524)
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87306 |
Lv Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志红), Gu Guo-Dong (顾国栋), Yin Jia-Yun (尹甲运), Fang Yu-Long (房玉龙), Wang Yuan-Gang (王元刚), Tan Xin (谭鑫), Zhou Xing-Ye (周幸叶), Lin Zhao-Jun (林兆军), Ji Zi-Wu (冀子武), Cai Shu-Jun (蔡树军) |
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Influence of the AlGaN barrier thickness on polarization Coulomb field scattering in an AlGaN/AlN/GaN heterostructure field-effect transistor |
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Chin. Phys. B
2015 Vol.24 (8): 87306-087306
[Abstract]
(782)
[HTML 1 KB]
[PDF 361 KB]
(353)
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57901 |
Shi Ming (侍铭), Chen Ping (陈平), Zhao De-Gang (赵德刚), Jiang De-Sheng (江德生), Zheng Jun (郑军), Cheng Bu-Wen (成步文), Zhu Jian-Jun (朱建军), Liu Zong-Shun (刘宗顺), Liu Wei (刘炜), Li Xiang (李翔), Zhao Dan-Mei (赵丹梅), Wang Qi-Ming (王启明), Liu Jian-Ping (刘建平), Zhang Shu-Ming (张书明), Yang Hui (杨辉) |
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Thin film micro-scaled cold cathode structures of undoped and Si-doped AlN grown on SiC substrate with low turn-on voltage |
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Chin. Phys. B
2015 Vol.24 (5): 57901-057901
[Abstract]
(721)
[HTML 1 KB]
[PDF 677 KB]
(329)
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17302 |
Zhao Yi (赵一), Zhang Jin-Cheng (张进成), Xue Jun-Shuai (薛军帅), Zhou Xiao-Wei (周小伟), Xu Sheng-Rui (许晟瑞), Hao Yue (郝跃) |
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Influence of compressive strain on the incorporation of indium in InGaN and InAlN ternary alloys |
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Chin. Phys. B
2015 Vol.24 (1): 17302-017302
[Abstract]
(700)
[HTML 0 KB]
[PDF 456 KB]
(605)
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127104 |
Zhao Jing-Tao (赵景涛), Lin Zhao-Jun (林兆军), Luan Chong-Biao (栾崇彪), Lü Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志宏), Yang Ming (杨铭) |
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Effects of GaN cap layer thickness on an AlN/GaN heterostructure |
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Chin. Phys. B
2014 Vol.23 (12): 127104-127104
[Abstract]
(677)
[HTML 1 KB]
[PDF 532 KB]
(753)
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88103 |
Wang Jun (王军), Zhao Meng (赵萌), Zuo Si-Bin (左思斌), Wang Wen-Jun (王文军) |
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Growth of threaded AlN whiskers by a physical vapor transport method |
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Chin. Phys. B
2014 Vol.23 (8): 88103-088103
[Abstract]
(676)
[HTML 1 KB]
[PDF 549 KB]
(459)
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87810 |
Wang Wei-Ying (王维颖), Jin Peng (金鹏), Liu Gui-Peng (刘贵鹏), Li Wei (李维), Liu Bin (刘斌), Liu Xing-Fang (刘兴昉), Wang Zhan-Guo (王占国) |
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Effect of high-temperature annealing on AlN thin film grown by metalorganic chemical vapor deposition |
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Chin. Phys. B
2014 Vol.23 (8): 87810-087810
[Abstract]
(766)
[HTML 1 KB]
[PDF 742 KB]
(639)
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77105 |
Lü Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志红), Lin Zhao-Jun (林兆军), Guo Hong-Yu (郭红雨), Gu Guo-Dong (顾国栋), Yin Jia-Yun (尹甲运), Wang Yuan-Gang (王元刚), Xu Peng (徐鹏), Song Xu-Bo (宋旭波), Cai Shu-Jun (蔡树军) |
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Influence of temperature on strain-induced polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors |
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Chin. Phys. B
2014 Vol.23 (7): 77105-077105
[Abstract]
(683)
[HTML 1 KB]
[PDF 269 KB]
(409)
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47201 |
Yu Ying-Xia (于英霞), Lin Zhao-Jun (林兆军), Luan Chong-Biao (栾崇彪), Lü Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志红), Yang Ming (杨铭), Wang Yu-Tang (王玉堂) |
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Influence of the channel electric field distribution on the polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors |
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Chin. Phys. B
2014 Vol.23 (4): 47201-047201
[Abstract]
(507)
[HTML 1 KB]
[PDF 336 KB]
(480)
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28101 |
Wang Hu (王虎), Xiong Hui (熊晖), Wu Zhi-Hao (吴志浩), Yu Chen-Hui (余晨辉), Tian Yu (田玉), Dai Jiang-Nan (戴江南), Fang Yan-Yan (方妍妍), Zhang Jian-Bao (张健宝), Chen Chang-Qing (陈长清) |
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Occurrence and elimination of in-plane misoriented crystals in AlN epilayers on sapphire via pre-treatment control |
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Chin. Phys. B
2014 Vol.23 (2): 28101-028101
[Abstract]
(529)
[HTML 1 KB]
[PDF 650 KB]
(488)
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16801 |
Zhang Zhao-Fu (张召富), Zhou Tie-Ge (周铁戈), Zhao Hai-Yang (赵海洋), Wei Xiang-Lei (卫湘蕾) |
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First-principles calculations of 5d atoms doped hexagonal-AlN sheets：Geometry, magnetic property and the influence of symmetry and symmetry-breaking on the electronic structure |
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Chin. Phys. B
2014 Vol.23 (1): 16801-016801
[Abstract]
(645)
[HTML 1 KB]
[PDF 834 KB]
(808)
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88104 |
Ni Yi-Qiang (倪毅强), He Zhi-Yuan (贺致远), Zhong Jian (钟健), Yao Yao (姚尧), Yang Fan (杨帆), Xiang Peng (向鹏), Zhang Bai-Jun (张佰君), Liu Yang (刘扬) |
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Electrical properties of MOCVD-grown GaN on Si (111) substrates with low-temperature AlN interlayers |
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Chin. Phys. B
2013 Vol.22 (8): 88104-088104
[Abstract]
(694)
[HTML 1 KB]
[PDF 397 KB]
(3931)
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67203 |
Yu Ying-Xia (于英霞), Lin Zhao-Jun (林兆军), Luan Chong-Biao (栾崇彪), Wang Yu-Tang (王玉堂), Chen Hong (陈弘), Wang Zhan-Guo (王占国) |
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Electron mobility in the linear region of AlGaN/AlN/GaN heterostructure field-effect transistor |
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Chin. Phys. B
2013 Vol.22 (6): 67203-067203
[Abstract]
(688)
[HTML 1 KB]
[PDF 550 KB]
(659)
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57105 |
Liu Bo (刘波), Zhang Sen (张森), Yin Jia-Yun (尹甲运), Zhang Xiong-Wen (张雄文), Dun Shao-Bo (敦少博), Feng Zhi-Hong (冯志红), Cai Shu-Jun (蔡树军) |
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Effect of high-temperature buffer thickness on quality of AlN epilayer grown on sapphire substrate by metalorganic chemical vapor deposition |
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Chin. Phys. B
2013 Vol.22 (5): 57105-057105
[Abstract]
(674)
[HTML 1 KB]
[PDF 1310 KB]
(1148)
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47102 |
Cao Zhi-Fang (曹芝芳), Lin Zhao-Jun (林兆军), Lü Yuan-Jie (吕元杰), Luan Chong-Biao (栾崇彪), Wang Zhan-Guo (王占国) |
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Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostructure field-effect transistors |
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Chin. Phys. B
2013 Vol.22 (4): 47102-047102
[Abstract]
(688)
[HTML 1 KB]
[PDF 344 KB]
(495)
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126804 |
Lin Zhi-Yu (林志宇), Zhang Jin-Cheng (张进成), Zhou Hao (周昊), Li Xiao-Gang (李小刚), Meng Fan-Na (孟凡娜), Zhang Lin-Xia (张琳霞), Ai Shan (艾姗), Xu Sheng-Rui (许晟瑞), Zhao Yi (赵一), Hao Yue (郝跃) |
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Influence of double AlN buffer layers on the qualities of GaN films prepared by metal–organic chemical vapour deposition |
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Chin. Phys. B
2012 Vol.21 (12): 126804-126804
[Abstract]
(966)
[HTML 1 KB]
[PDF 3284 KB]
(1099)
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87101 |
Qiao Zhi-Juan (乔志娟), Chen Guang-De (陈光德), Ye Hong-Gang (耶红刚), Wu Ye-Long (伍叶龙), Niu Hai-Bo (牛海波), Zhu You-Zhang (竹有章 ) |
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Electronic and structural properties of N-vacancy in AlN nanowires: A first-principles study |
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Chin. Phys. B
2012 Vol.21 (8): 87101-087101
[Abstract]
(1405)
[HTML 1 KB]
[PDF 2747 KB]
(631)
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17103 |
Cao Zhi-Fang(曹芝芳), Lin Zhao-Jun(林兆军), LŰ Yuan-Jie(吕元杰), Luan Chong-Biao(栾崇彪), Yu Ying-Xia(于英霞), Chen Hong(陈弘), and Wang Zhan-Guo(王占国) |
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Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes |
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Chin. Phys. B
2012 Vol.21 (1): 17103-017103
[Abstract]
(1388)
[HTML 1 KB]
[PDF 247 KB]
(1188)
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16501 |
Zhang Yue-Fei(张跃飞), Wang Li(王丽), R. Heiderhoff, A. K. Geinzer, Wei Bin(卫斌), Ji Yuan(吉元), Han Xiao-Dong(韩晓东), L.J. Balk, and Zhang Ze(张泽) |
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Local thermal conductivity of polycrystalline AlN ceramics measured by scanning thermal microscopy and complementary scanning electron microscopy techniques |
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Chin. Phys. B
2012 Vol.21 (1): 16501-016501
[Abstract]
(1343)
[HTML 1 KB]
[PDF 892 KB]
(1080)
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97302 |
Ma Xiao-Hua(马晓华), Ma Ping(马平), Jiao Ying(焦颖), Yang Li-Yuan(杨丽媛), Ma Ji-Gang(马骥刚), He Qiang(贺强), Jiao Sha-Sha(焦莎莎), Zhang Jin-Cheng(张进成), and Hao Yue(郝跃) |
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Magnetotransport properties of two-dimensional electron gas in AlGaN/AlN/GaN heterostructures |
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Chin. Phys. B
2011 Vol.20 (9): 97302-097302
[Abstract]
(1560)
[HTML 1 KB]
[PDF 544 KB]
(947)
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57801 |
Zhang Jin-Feng (张金风), Xu Sheng-Rui (许晟瑞), Zhang Jin-Cheng (张进成), Hao Yue (郝跃) |
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Optical and structural investigation of a-plane GaN layers on r-plane sapphire with nucleation layer optimization |
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Chin. Phys. B
2011 Vol.20 (5): 57801-057801
[Abstract]
(1522)
[HTML 1 KB]
[PDF 1777 KB]
(1385)
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48502 |
Zhang Yun-Yan(张运炎) and Fan Guang-Han(范广涵) |
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Comparison of nitride-based dual-wavelength light- emitting diodes with an InAlN electron-blocking layer and with p-type doped barriers |
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Chin. Phys. B
2011 Vol.20 (4): 48502-048502
[Abstract]
(1458)
[HTML 0 KB]
[PDF 268 KB]
(1062)
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97302 |
Wang Xin-Hua(王鑫华), Zhao Miao(赵妙), Liu Xin-Yu(刘新宇), Pu Yan(蒲颜), Zheng Ying-Kui(郑英奎), and Wei Ke(魏珂) |
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The physical process analysis of the capacitance–voltage characteristics of AlGaN/AlN/GaN high electron mobility transistors |
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Chin. Phys. B
2010 Vol.19 (9): 97302-097302
[Abstract]
(1840)
[HTML 0 KB]
[PDF 193 KB]
(3650)
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57203 |
Xue Jun-Shuai(薛军帅), Hao Yue(郝跃), Zhang Jin-Cheng(张进成), and Ni Jin-Yu(倪金玉) |
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Comparative study of different properties of GaN films grown on(0001) sapphire using high and low temperature AlN interlayers |
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Chin. Phys. B
2010 Vol.19 (5): 57203-057203
[Abstract]
(1333)
[HTML 1 KB]
[PDF 187 KB]
(907)
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36801 |
Wu Yu-Xin(吴玉新), Zhu Jian-Jun(朱建军), Chen Gui-Feng(陈贵锋), Zhang Shu-Ming(张书明), Jiang De-Sheng(江德生), Liu Zong-Shun(刘宗顺), Zhao De-Gang(赵德刚), Wang Hui(王辉), Wang Yu-Tian(王玉田), and Yang Hui(杨辉) |
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Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer |
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Chin. Phys. B
2010 Vol.19 (3): 36801-036801
[Abstract]
(1814)
[HTML 1 KB]
[PDF 2177 KB]
(3132)
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107205 |
Liu Fei(刘飞), Mo Fu-Yao(莫富尧), Li Li(李力), Su Zan-Jia(苏赞加), Huang Ze-Qiang(黄泽强), Deng Shao-Zhi(邓少芝), Chen Jun(陈军), and Xu Ning-Sheng(许宁生) |
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No-catalyst growth of vertically-aligned AlN nanocone field electron emitter arrays with high emission performance at low temperature |
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Chin. Phys. B
2010 Vol.19 (10): 107205-107205
[Abstract]
(1313)
[HTML 1 KB]
[PDF 10226 KB]
(594)
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3905 |
Cen Long-Bin(岑龙斌), Shen Bo(沈波), Qin Zhi-Xin(秦志新), and Zhang Guo-Yi(张国义) |
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Influence of applied electric field on the absorption coefficient and subband distances in asymmetrical AlN/GaN coupled double quantum wells |
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Chin. Phys. B
2009 Vol.18 (9): 3905-3908
[Abstract]
(1476)
[HTML 1 KB]
[PDF 260 KB]
(726)
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2925 |
Yan Guo-Jun(顔国君), Chen Guang-De(陈光德), and Wu Ye-Long(伍叶龙) |
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Nanoporous AlN particles production from a solid-state metathesis reaction |
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Chin. Phys. B
2009 Vol.18 (7): 2925-2927
[Abstract]
(1459)
[HTML 1 KB]
[PDF 1329 KB]
(946)
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2016 |
Liu Fei(刘飞), Su Zan-Jia(苏赞加), Liang Wei-Jie(梁炜杰), Mo Fu-Yao(莫富尧), Li Li(李力), Deng Shao-Zhi(邓少芝), Chen Jun(陈军), and Xu Ning-Sheng(许宁生) |
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Controlled growth and field emission of vertically aligned AlN nanostructures with different morphologies |
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Chin. Phys. B
2009 Vol.18 (5): 2016-2023
[Abstract]
(1463)
[HTML 0 KB]
[PDF 2119 KB]
(729)
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1207 |
Zhang Wei(张伟), Cheng Yan(程艳), Zhu Jun(朱俊), and Chen Xiang-Rong(陈向荣) |
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Structural, thermodynamic and electronic properties of zinc-blende AlN from first-principles calculations |
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Chin. Phys. B
2009 Vol.18 (3): 1207-1213
[Abstract]
(1303)
[HTML 1 KB]
[PDF 185 KB]
(983)
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2814 |
Lv Hui-Min(吕惠民), Chen Guang-De(陈光德), Yan Guo-Jun(颜国君), and Ye Hong-Gang(耶红刚) |
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Synthesis of hexagonal monocrystal AlN microtubes and nanowires at low temperature |
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Chin. Phys. B
2007 Vol.16 (9): 2814-2817
[Abstract]
(1127)
[HTML 1 KB]
[PDF 646 KB]
(525)
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3783 |
Wang Yong-Liang(王永亮), Ai Qiong(艾琼), Chen Xiang-Rong(陈向荣), and Cai Ling-Cang(蔡灵仓) |
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Structural and thermodynamic properties of wurtzite-type aluminium nitride from first-principles calculations |
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Chin. Phys. B
2007 Vol.16 (12): 3783-3789
[Abstract]
(1457)
[HTML 1 KB]
[PDF 382 KB]
(868)
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1060 |
Zhang Jin-Feng (张金风), Wang Chong (王冲), Zhang Jin-Cheng (张进城), Hao Yue (郝 跃) |
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Effects of donor density and temperature on electron systems in AlGaN/AlN/GaN and AlGaN/GaN structures |
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Chin. Phys. B
2006 Vol.15 (5): 1060-1066
[Abstract]
(1845)
[HTML 1 KB]
[PDF 357 KB]
(994)
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