Effect of high-temperature annealing on AlN thin film grown by metalorganic chemical vapor deposition

doi:10.1088/1674-1056/23/8/087810

Abstract The effect of high-temperature annealing on AlN thin film grown by metalorganic chemical vapor deposition was investigated using atomic force microscopy, Raman spectroscopy, and deep ultra-violet photoluminescence (PL) with the excitation wavelength as short as ～ 177 nm. Annealing experiments were carried out in either N₂ or vacuum atmosphere with the annealing temperature ranging from 1200 ℃ to 1600 ℃. It is found that surface roughness reduced and compressive strain increased with the annealing temperature increasing in both annealing atmospheres. As to optical properties, a band-edge emission peak at 6.036 eV and a very broad emission band peaking at about 4.7 eV were observed in the photoluminescence spectrum of the as-grown sample. After annealing, the intensity of the band-edge emission peak varied with the annealing temperature and atmosphere. It is also found that a much stronger emission band ranging from 2.5 eV to 4.2 eV is superimposed on the original spectra by annealing in either N₂ or vacuum atmosphere. We attribute these deep-level emission peaks to the V_AL-O_{m N} complex in the AlN material.

Keywords: high-temperature annealing AlN optical properties

Received: 13 February 2014
Revised: 04 April 2014
Accepted manuscript online:

PACS:	78.55.Cr	(III-V semiconductors)
	81.40.Tv	(Optical and dielectric properties related to treatment conditions)
	81.40.-z	(Treatment of materials and its effects on microstructure, nanostructure, And properties)

Fund: Project supported by the National Basic Research Program of China (Grant No. 2012CB619306) and 863 Program of China (Grant No. 2011AA03A101).

Corresponding Authors: Jin Peng
E-mail: pengjin@semi.ac.cn

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Wang Wei-Ying (王维颖), Jin Peng (金鹏), Liu Gui-Peng (刘贵鹏), Li Wei (李维), Liu Bin (刘斌), Liu Xing-Fang (刘兴昉), Wang Zhan-Guo (王占国) Effect of high-temperature annealing on AlN thin film grown by metalorganic chemical vapor deposition 2014 Chin. Phys. B 23 087810

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Effect of high-temperature annealing on AlN thin film grown by metalorganic chemical vapor deposition

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