Thin film micro-scaled cold cathode structures of undoped and Si-doped AlN grown on SiC substrate with low turn-on voltage

doi:10.1088/1674-1056/24/5/057901

Abstract The field emission characteristics of the AlN thin films with micro-scaled cold cathode structures are tested in the high vacuum system. The aluminum nitride (AlN) thin films with a thickness of about 100 nm are prepared on the n-type 6H-SiC (0001) substrate at 1100 ℃ by metal organic chemical vapor deposition (MOCVD) under low pressure. The I–V curves and surface micro-images of undoped and Si-doped AlN films are investigated. From the I–V and Fowler–Nordheim plots, it can be seen that the Si-doped AlN shows better field emission characteristics compared with the undoped AlN sample. The obtained turn-on field is 6.7 V/μm and the maximum emission current density is 154 mA/cm² at 69.3 V for the Si-doped AlN film cathode after proper surface treatment. It is proposed that the relatively low electric resistivity of Si-doped AlN films is significant for electron migration to the surface region, and their rougher surface morphology is beneficial to a higher local electric field enhancement for the field emission.

Keywords: AlN field emission cold cathode negative electron affinity

Received: 15 October 2014
Revised: 05 December 2014
Accepted manuscript online:

PACS:	79.60.Bm	(Clean metal, semiconductor, and insulator surfaces)
	79.60.Dp	(Adsorbed layers and thin films)
	79.70.+q	(Field emission, ionization, evaporation, and desorption)
	79.90.+b	(Other topics in electron and ion emission by liquids and solids and impact phenomena)

Fund: Project Project of the Key Laboratory of Nano-devices and Applications, China (Grant No. 13ZS04), and the National Science Fund for Distinguished Young Scholars, China (Grant No. 60925017).

Corresponding Authors: Shi Ming, Chen Ping, Zhao De-Gang
E-mail: dgzhao@red.semi.ac.cn

About author: 79.60.Bm; 79.60.Dp; 79.70.+q; 79.90.+b

Cite this article:

Shi Ming (侍铭), Chen Ping (陈平), Zhao De-Gang (赵德刚), Jiang De-Sheng (江德生), Zheng Jun (郑军), Cheng Bu-Wen (成步文), Zhu Jian-Jun (朱建军), Liu Zong-Shun (刘宗顺), Liu Wei (刘炜), Li Xiang (李翔), Zhao Dan-Mei (赵丹梅), Wang Qi-Ming (王启明), Liu Jian-Ping (刘建平), Zhang Shu-Ming (张书明), Yang Hui (杨辉) Thin film micro-scaled cold cathode structures of undoped and Si-doped AlN grown on SiC substrate with low turn-on voltage 2015 Chin. Phys. B 24 057901

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Thin film micro-scaled cold cathode structures of undoped and Si-doped AlN grown on SiC substrate with low turn-on voltage

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