Abstract A mass of GaN nanowires has been successfully synthesized on Si(111) substrates by magnetron sputtering through ammoniating Ga2O3/Co films at 950℃. X-ray diffraction, scanning electron microscopy, high resolution transmission electron microscope and Fourier transformed infrared spectra are used to characterize the samples. The results demonstrate that the nanowires are of single-crystal GaN with a hexagonal wurtzite structure and possess relatively smooth surfaces. The growth mechanism of GaN nanowires is also discussed.
Received: 28 August 2007
Revised: 28 November 2007
Accepted manuscript online:
PACS:
81.16.-c
(Methods of micro- and nanofabrication and processing)
Fund: Project supported
by the National Natural Science Foundation of China (Grant Nos
90201025 and 90301002).
Cite this article:
Qin Li-Xia(秦丽霞), Xue Cheng-Shan(薛成山), Zhuang Hui-Zhao(庄惠照), Yang Zhao-Zhu(杨兆柱), Chen Jin-Hua(陈金华), and Li Hong(李红) Synthesis of large-scale GaN nanowires by ammoniating Ga2O3 films on Co layer deposited on Si(111) substrates 2008 Chin. Phys. B 17 2180
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
