The surface oxidation of silicon (Si) wafers by atomic oxygen radical anions (O
- anions) and the preparation of metal--oxide--semiconductor (MOS) capacitors on the O
--oxidized Si substrates have been examined for the first time. The O
- anions are generated from a recently developed O
- storage-emission material of [Ca
24Al
28O
64]
4+$\cdot$4O
- (C12A7-O
- for short). After it has been irradiated by an O
- anion beam (0.5$\mu$ A/cm
2) at 300℃ for 1--10 hours, the Si wafer achieves an oxide layer with a thickness ranging from 8 to 32nm. X-ray photoelectron spectroscopy (XPS) results reveal that the oxide layer is of a mixture of SiO
2, Si
2O
3, and Si
2O distributed in different oxidation depths. The features of the MOS capacitor of <Al electrode/SiO
x/Si> are investigated by measuring capacitance-voltage (C-V) and current-voltage (I-V) curves. The oxide charge density is about 6.0 $\times$ 1011cm2 derived from the C-V curves. The leakage current density is in the order of 10-6A/cm2 below 4MV/cm, obtained from the $I-V$ curves. The O- anions formed by present method would have potential applications to the oxidation and the surface-modification of materials together with the preparation of semiconductor devices.