Optimized growth of compensated ferrimagnetic insulator Gd3Fe5O12 with a perpendicular magnetic anisotropy

doi:10.1088/1674-1056/ac0db0

Abstract Compensated ferrimagnetic insulators are particularly interesting for enabling functional spintronic, optical, and microwave devices. Among many different garnets, Gd₃Fe₅O₁₂ (GdIG) is a representative compensated ferrimagnetic insulator. In this paper, we will study the evolution of the surface morphology, the magnetic properties, and the magnetization compensation through changing the following parameters: the annealing temperature, the growth temperature, the annealing duration, and the choice of different single crystalline garnet substrates. Our objective is to find the optimized growth condition of the GdIG films, for the purpose of achieving a strong perpendicular magnetic anisotropy (PMA) and a flat surface, together with a small effective damping parameter. Through our experiments, we have found that the surface roughness approaching 0.15 nm can be obtained by choosing the growth temperature around 700 ℃, together with an enhanced PMA. We have also found the modulation of magnetic anisotropy by choosing different single crystalline garnet substrates which change the tensile strain to the compressive strain. A measure of the effective magnetic damping parameter (α_eff=0.04±0.01) through a spin pumping experiment in a GdIG/Pt bilayer is also made. Through optimizing the growth dynamics of GdIG films, our results could be useful for synthesizing garnet films with a PMA, which could be beneficial for the future development of ferrimagnetic spintronics.

Keywords: ferrimagnet perpendicular magnetic anisotropy ferrite and garnet devices crystal growth

Received: 09 May 2021
Revised: 15 June 2021
Accepted manuscript online: 23 June 2021

PACS:	75.50.Gg	(Ferrimagnetics)
	75.30.Gw	(Magnetic anisotropy)
	85.70.Ge	(Ferrite and garnet devices)
	81.10.-h	(Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)

Fund: Project supported by the National Key R&D Program of China (Grant Nos. 2017YFA0206200 and 2016YFA0302300), the Basic Science Center Project of the National Natural Science Foundation of China (Grant No. 51788104), the National Natural Science Foundation of China (Grant Nos. 11774194, 11804182, 51831005, and 11811082), Beijing Natural Science Foundation (Grant No. Z190009), and the Beijing Advanced Innovation Center for Future Chip (ICFC).

Corresponding Authors: Wanjun Jiang
E-mail: jiang_lab@tsinghua.edu.cn

Cite this article:

Heng-An Zhou(周恒安), Li Cai(蔡立), Teng Xu(许腾), Yonggang Zhao(赵永刚), and Wanjun Jiang(江万军) Optimized growth of compensated ferrimagnetic insulator Gd₃Fe₅O₁₂ with a perpendicular magnetic anisotropy 2021 Chin. Phys. B 30 097503

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Optimized growth of compensated ferrimagnetic insulator Gd3Fe5O12 with a perpendicular magnetic anisotropy

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Optimized growth of compensated ferrimagnetic insulator Gd₃Fe₅O₁₂ with a perpendicular magnetic anisotropy