Crystal and electronic structure of a quasi-two-dimensional semiconductor Mg3Si2Te6

doi:10.1088/1674-1056/aca393

Abstract We report the synthesis and characterization of a Si-based ternary semiconductor Mg₃Si₂Te₆, which exhibits a quasi-two-dimensional structure, where the trigonal Mg₂Si₂Te₆ layers are separated by Mg ions. Ultraviolet-visible absorption spectroscopy and density functional theory calculations were performed to investigate the electronic structure. The experimentally determined direct band gap is 1.39 eV, consistent with the value of the density function theory calculations. Our results reveal that Mg₃Si₂Te₆ is a direct gap semiconductor, which is a potential candidate for near-infrared optoelectronic devices.

Keywords: semiconductors semiconductor compounds narrow-band systems methods of crystal growth

Received: 31 August 2022
Revised: 28 October 2022
Accepted manuscript online: 17 November 2022

PACS:	78.40.Fy	(Semiconductors)
	71.20.Nr	(Semiconductor compounds)
	71.28.+d	(Narrow-band systems; intermediate-valence solids)
	81.10.-h	(Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 12174454, 11904414, 11904416, and 12104427), the Guangdong Basic and Applied Basic Research Foundation, China (Grant No. 2021B1515120015), the Guangzhou Basic and Applied Basic Research Foundation (Grant No. 202201011123), and the National Key Research and Development Program of China (Grant No. 2019YFA0705702).

Corresponding Authors: Chaoxin Huang, Benyuan Cheng, Meng Wang
E-mail: wangmeng5@mail.sysu.edu.cn

Cite this article:

Chaoxin Huang(黄潮欣), Benyuan Cheng(程本源), Yunwei Zhang(张云蔚), Long Jiang(姜隆), Lisi Li(李历斯), Mengwu Huo(霍梦五), Hui Liu(刘晖), Xing Huang(黄星), Feixiang Liang(梁飞翔), Lan Chen(陈岚), Hualei Sun(孙华蕾), and Meng Wang(王猛) Crystal and electronic structure of a quasi-two-dimensional semiconductor Mg₃Si₂Te₆ 2023 Chin. Phys. B 32 037802

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Crystal and electronic structure of a quasi-two-dimensional semiconductor Mg3Si2Te6

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Crystal and electronic structure of a quasi-two-dimensional semiconductor Mg₃Si₂Te₆