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CN 11-5639/O4
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Other articles related with "78.30.Fs":
37804 Ming Liu, Cong Wang, Li-Qing Zhou
  Development of small pixel HgCdTe infrared detectors
    Chin. Phys. B   2019 Vol.28 (3): 37804-037804 [Abstract] (193) [HTML 1 KB] [PDF 5437 KB] (191)
27301 Sheng-Lei Zhao, Zhi-Zhe Wang, Da-Zheng Chen, Mao-Jun Wang, Yang Dai, Xiao-Hua Ma, Jin-Cheng Zhang, Yue Hao
  1.8-kV circular AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistor
    Chin. Phys. B   2019 Vol.28 (2): 27301-027301 [Abstract] (81) [HTML 1 KB] [PDF 507 KB] (68)
17804 Hai-Juan Cui(崔海娟), Hong-Chun Yang(杨宏春), Jun Xu(徐军), Yu-Ming Yang(杨宇明), Zi-Xian Yang(杨子贤)
  Roles of voltage in semi-insulating GaAs photoconductive semiconductor switch
    Chin. Phys. B   2017 Vol.26 (1): 17804-017804 [Abstract] (169) [HTML 1 KB] [PDF 334 KB] (530)
27303 Jun Luo, Sheng-Lei Zhao, Min-Han Mi, Wei-Wei Chen, Bin Hou, Jin-Cheng Zhang, Xiao-Hua Ma, Yue Hao
  Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor
    Chin. Phys. B   2016 Vol.25 (2): 27303-027303 [Abstract] (321) [HTML 1 KB] [PDF 496 KB] (646)
117305 Luo Jun, Zhao Sheng-Lei, Mi Min-Han, Hou Bin, Yang Xiao-Lei, Zhang Jin-Cheng, Ma Xiao-Hua, Hao Yue
  Trap states induced by reactive ion etching in AlGaN/GaN high-electron-mobility transistors
    Chin. Phys. B   2015 Vol.24 (11): 117305-117305 [Abstract] (305) [HTML 1 KB] [PDF 339 KB] (469)
94208 Yao Chen, Xu Tian-Hong, Wan Wen-Jian, Zhu Yong-Hao, Cao Jun-Cheng
  An equivalent circuit model for terahertz quantumcascade lasers: Modeling and experiments
    Chin. Phys. B   2015 Vol.24 (9): 94208-094208 [Abstract] (214) [HTML 1 KB] [PDF 1168 KB] (326)
97301 Wu Xiao-Guang, Pang Mi
  Landau level transitions in InAs/AlSb/GaSb quantum wells
    Chin. Phys. B   2015 Vol.24 (9): 97301-097301 [Abstract] (351) [HTML 1 KB] [PDF 2750 KB] (245)
57801 Liu Jian-Ming, Zhang Jie, Lin Wen-Yu, Ye Meng-Xin, Feng Xiang-Xu, Zhang Dong-Yan, Steve Ding, Xu Chen-Ke, Liu Bao-Lin
  Effect of pressure on the semipolar GaN (10-11) growth mode on patterned Si substrates
    Chin. Phys. B   2015 Vol.24 (5): 57801-057801 [Abstract] (328) [HTML 1 KB] [PDF 964 KB] (454)
27302 Zheng Xue-Feng, Fan Shuang, Chen Yong-He, Kang Di, Zhang Jian-Kun, Wang Chong, Mo Jiang-Hui, Li Liang, Ma Xiao-Hua, Zhang Jin-Cheng, Hao Yue
  Transport mechanism of reverse surface leakage current in AlGaN/GaN high-electron mobility transistor with SiN passivation
    Chin. Phys. B   2015 Vol.24 (2): 27302-027302 [Abstract] (279) [HTML 0 KB] [PDF 390 KB] (456)
17303 Sun Wei-Wei, Zheng Xue-Feng, Fan Shuang, Wang Chong, Du Ming, Zhang Kai, Chen Wei-Wei, Cao Yan-Rong, Mao Wei, Ma Xiao-Hua, Zhang Jin-Cheng, Hao Yue
  Degradation mechanism of enhancement-mode AlGaN/GaN HEMTs using fluorine ion implantation under the on-state gate overdrive stress
    Chin. Phys. B   2015 Vol.24 (1): 17303-017303 [Abstract] (178) [HTML 0 KB] [PDF 313 KB] (499)
107303 Zhao Sheng-Lei, Mi Min-Han, Hou Bin, Luo Jun, Wang Yi, Dai Yang, Zhang Jin-Cheng, Ma Xiao-Hua, Hao Yue
  Mechanism of improving forward and reverse blocking voltages in AlGaN/GaN HEMTs by using Schottky drain
    Chin. Phys. B   2014 Vol.23 (10): 107303-107303 [Abstract] (107) [HTML 1 KB] [PDF 1455 KB] (720)
107803 Xing Hai-Ying, Xu Zhang-Cheng, Cui Ming-Qi, Xie Yu-Xin, Zhang Guo-Yi
  Mid-gap photoluminescence and magnetic properties of GaMnN films grown by metal-organic chemical vapor deposition
    Chin. Phys. B   2014 Vol.23 (10): 107803-107803 [Abstract] (86) [HTML 1 KB] [PDF 289 KB] (317)
97305 Zhao Sheng-Lei, Wang Yuan, Yang Xiao-Lei, Lin Zhi-Yu, Wang Chong, Zhang Jin-Cheng, Ma Xiao-Hua, Hao Yue
  Reverse blocking enhancement of drain field plate in Schottky-drain AlGaN/GaN high-electron mobility transistors
    Chin. Phys. B   2014 Vol.23 (9): 97305-097305 [Abstract] (123) [HTML 1 KB] [PDF 1027 KB] (622)
67103 Li Liang, Yang Lin-An, Xue Jun-Shuai, Cao Rong-Tao, Xu Sheng-Rui, Zhang Jin-Cheng, Hao Yue
  Improved crystal quality of GaN film with the in-plane lattice-matched In0.17Al0.83N interlayer grown on sapphire substrate using pulsed metal–organic chemical vapor deposition
    Chin. Phys. B   2014 Vol.23 (6): 67103-067103 [Abstract] (140) [HTML 1 KB] [PDF 1120 KB] (370)
67803 Zhang Dian, Liu Fa-Min, Cai Lu-Gang
  N vacancy, substitutional O, and Al defects in the bandgap of composition-tunable nonstoichiometric AlN powder
    Chin. Phys. B   2014 Vol.23 (6): 67803-067803 [Abstract] (75) [HTML 1 KB] [PDF 1589 KB] (426)
37302 Wen Hui-Juan, Zhang Jin-Cheng, Lu Xiao-Li, Wang Zhi-Zhe, Ha Wei, Ge Sha-Sha, Cao Rong-Tao, Hao Yue
  Improved mobility of AlGaN channel heterojunction material using an AlGaN/GaN composite buffer layer
    Chin. Phys. B   2014 Vol.23 (3): 37302-037302 [Abstract] (129) [HTML 1 KB] [PDF 878 KB] (389)
117307 Zhao Sheng-Lei, Chen Wei-Wei, Yue Tong, Wang Yi, Luo Jun, Mao Wei, Ma Xiao-Hua, Hao Yue
  Influence of a drain field plate on the forward blocking characteristics of an AlGaN/GaN high electron mobility transistor
    Chin. Phys. B   2013 Vol.22 (11): 117307-117307 [Abstract] (106) [HTML 1 KB] [PDF 343 KB] (363)
106105 Zhou Lin, Shang Yan-Xia, Wang Ze-Song, Zhang Rui, Zhang Zao-Di, Vasiliy O. Pelenovich, Fu De-Jun, Kang Tae Won
  Optical and magnetic properties of InFeP layers prepared by Fe+ implantation
    Chin. Phys. B   2013 Vol.22 (10): 106105-106105 [Abstract] (210) [HTML 1 KB] [PDF 1022 KB] (498)
107303 Chen Wei-Wei, Ma Xiao-Hua, Hou Bin, Zhu Jie-Jie, Zhang Jin-Cheng, Hao Yue
  The degradation mechanism of an AlGaN/GaN high electron mobility transistor under step-stress
    Chin. Phys. B   2013 Vol.22 (10): 107303-107303 [Abstract] (152) [HTML 1 KB] [PDF 382 KB] (484)
97303 Taj Muhammad Khan, Tayyaba BiBi
  Compatibility and optoelectronic of ZnSe nano crystalline thin film
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77304 Yang Li-Yuan, Xue Xiao-Yong, Zhang Kai, Zheng Xue-Feng, Ma Xiao-Hua, Hao Yue
  Channel temperature determination of multifinger AlGaN/GaN high electron mobility transistor using micro-Raman technique
    Chin. Phys. B   2012 Vol.21 (7): 77304-077304 [Abstract] (1105) [HTML 1 KB] [PDF 288 KB] (1081)
77801 Xing Hai-Ying, Niu Ping-Juan, Xie Yu-Xin
  The properties of GaMnN lms grown by metalorganic chemical vapour deposition using Raman spectroscopy
    Chin. Phys. B   2012 Vol.21 (7): 77801-077801 [Abstract] (952) [HTML 1 KB] [PDF 213 KB] (438)
66802 Xiu Xian-Wu, Zhao Wen-Jing
  The properties of transparent conducting molybdenum-doped ZnO films grown by radio frequency magnetron sputtering
    Chin. Phys. B   2012 Vol.21 (6): 66802-066802 [Abstract] (931) [HTML 1 KB] [PDF 521 KB] (1155)
37105 Huang Xiao-Hui,Liu Jian-Ping,Fan Ya-Ming,Kong Jun-Jie,Yang Hui,Wang Huai-Bing
  Improving InGaN-LED performance by optimizing the patterned sapphire substrate shape
    Chin. Phys. B   2012 Vol.21 (3): 37105-037105 [Abstract] (1098) [HTML 1 KB] [PDF 257 KB] (1800)
37802 Zhan Feng,He Ji-Fang,Shang Xiang-Jun,Li Mi-Feng,Ni Hai-Qiao,Xu Ying-Qiang,Niu Zhi-Chuan
  An effective reflectance method for designing broadband antireflection films coupled with solar cells
    Chin. Phys. B   2012 Vol.21 (3): 37802-037802 [Abstract] (824) [HTML 1 KB] [PDF 259 KB] (1022)
17804 Yue Fang-Yu, Chen Lu, Li Ya-Wei, Sun Lin, Yang Ping-Xiong, Chu Jun-Hao
  The determination of the x value in doped Hg1-xCdxTe by transmission spectra
    Chin. Phys. B   2012 Vol.21 (1): 17804-017804 [Abstract] (807) [HTML 1 KB] [PDF 377 KB] (509)
127305 Ma Xiao-Hua, Jiao Ying, Ma Ping, He Qiang, Ma Ji-Gang, Zhang Kai, Zhang Hui-Long, Zhang Jin-Cheng, Hao Yue
  The reliability of AlGaN/GaN high electron mobility transistors under step-electrical stresses
    Chin. Phys. B   2011 Vol.20 (12): 127305-127305 [Abstract] (957) [HTML 1 KB] [PDF 271 KB] (1112)
94207
  Intersubband transitions in Al0.82In0.18N/GaN single quantum well
    Chin. Phys. B   2011 Vol.20 (9): 94207-094207 [Abstract] (924) [HTML 0 KB] [PDF 200 KB] (768)
76101 Zhao Wei, Wang Lai, Wang Jia-Xing, Luo Yi
  Luminescence properties of InxGa1 - xN (x ~ 0.04) films grown by metal organic vapour phase epitaxy
    Chin. Phys. B   2011 Vol.20 (7): 76101-076101 [Abstract] (973) [HTML 0 KB] [PDF 6656 KB] (699)
67304 Ma Xiao-Hua, Ma Ji-Gang, Yang Li-Yuan, He Qiang, Jiao Ying, Ma Ping, Hao Yue
  Kink effect in AlGaN/GaN high electron mobility transistors by electrical stress
    Chin. Phys. B   2011 Vol.20 (6): 67304-067304 [Abstract] (1028) [HTML 0 KB] [PDF 450 KB] (1805)
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