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Chin. Phys. B, 2020, Vol. 29(8): 086502    DOI: 10.1088/1674-1056/ab99af
Special Issue: SPECIAL TOPIC — Phononics and phonon engineering
SPECIAL TOPIC—Phononics and phonon engineering Prev   Next  

Ultra-low thermal conductivity of roughened silicon nanowires: Role of phonon-surface bond order imperfection scattering

Heng-Yu Yang(杨恒玉)1,2, Ya-Li Chen(陈亚利)3, Wu-Xing Zhou(周五星)1,2, Guo-Feng Xie(谢国锋)1,2, Ning Xu(徐宁)4,2
1 School of Materials Science and Engineering, Hunan University of Science and Technology, Xiangtan 411201, China;
2 Hunan Provincial Key Laboratory of Advanced Materials for New Energy Storage and Conversion, Xiangtan 411201, China;
3 School of Physics and Optoelectronics, Xiangtan University, Xiangtan 411105, China;
4 Deparment of Physics, Yancheng Institute of Technology, Yancheng 224051, China

The ultra-low thermal conductivity of roughened silicon nanowires (SiNWs) can not be explained by the classical phonon-surface scattering mechanism. Although there have been several efforts at developing theories of phonon-surface scattering to interpret it, but the underlying reason is still debatable. We consider that the bond order loss and correlative bond hardening on the surface of roughened SiNWs will deeply influence the thermal transport because of their ultra-high surface-to-volume ratio. By combining this mechanism with the phonon Boltzmann transport equation, we explicate that the suppression of high-frequency phonons results in the obvious reduction of thermal conductivity of roughened SiNWs. Moreover, we verify that the roughness amplitude has more remarkable influence on thermal conductivity of SiNWs than the roughness correlation length, and the surface-to-volume ratio is a nearly universal gauge for thermal conductivity of roughened SiNWs.

Keywords:  thermal conductivity      silicon nanowires      bond order imperfections      phonon-surface scattering  
Received:  31 March 2020      Revised:  04 June 2020      Accepted manuscript online: 
PACS:  65.80.-g (Thermal properties of small particles, nanocrystals, nanotubes, and other related systems)  
  63.22.-m (Phonons or vibrational states in low-dimensional structures and nanoscale materials)  

Project supported by the National Natural Science Foundation of China (Grant No. 11874145).

Corresponding Authors:  Guo-Feng Xie, Guo-Feng Xie     E-mail:;

Cite this article: 

Heng-Yu Yang(杨恒玉), Ya-Li Chen(陈亚利), Wu-Xing Zhou(周五星), Guo-Feng Xie(谢国锋), Ning Xu(徐宁) Ultra-low thermal conductivity of roughened silicon nanowires: Role of phonon-surface bond order imperfection scattering 2020 Chin. Phys. B 29 086502

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