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Chin. Phys. B, 2021, Vol. 30(8): 087302    DOI: 10.1088/1674-1056/abe3e7

A simple method to synthesize worm-like AlN nanowires and its field emission studies

Qi Liang(梁琦), Meng-Qi Yang(杨孟骐), Chang-Hao Wang(王长昊), and Ru-Zhi Wang(王如志)
Institute of New Energy Materials and Devices of Faculty of Materials and Manufacturing, Key Laboratory of Advanced Functional Materials of Education Ministry of China, Beijing University of Technology, Beijing 100124, China
Abstract  The worm-like AlN nanowires are fabricated by the plasma-enhanced chemical vapor deposition (PECVD) on Si substrates through using Al powder and N2 as precursors, CaF2 as fluxing medium, Au as catalyst, respectively. The as-grown worm-like AlN nanowires each have a polycrystalline and hexagonal wurtzite structure. Their diameters are about 300 nm, and the lengths are over 10 μm. The growth mechanism of worm-like AlN nanowires is discussed. Hydrogen plasma plays a very important role in forming the polycrystalline structure and rough surfaces of worm-like AlN nanowires. The worm-like AlN nanowires exhibit an excellent field-emission (FE) property with a low turn-on field of 4.5 V/μm at a current density of 0.01 mA/cm2 and low threshold field of 9.9 V/μm at 1 mA/cm2. The emission current densities of worm-like AlN nanowires each have a good stability. The enhanced FE properties of worm-like AlN nanowires may be due to their polycrystalline and rough structure with nanosize and high aspect ratio. The excellent FE properties of worm-like AlN nanowires can be explained by a grain boundary conduction mechanism. The results demonstrate that the worm-like AlN nanowires prepared by the proposed simple and the PECVD method possesses the potential applications in photoelectric and field-emission devices.
Keywords:  worm-like aluminum nitride nanowires      growth mechanism      plasma enhanced chemical vapor deposition      field-emission property  
Received:  18 December 2020      Revised:  25 January 2021      Accepted manuscript online:  07 February 2021
PACS:  73.61.Ey (III-V semiconductors)  
  73.90.+f (Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures)  
  81.05.-t (Specific materials: fabrication, treatment, testing, and analysis)  
  81.07.Gf (Nanowires)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11774017 and 51761135129).
Corresponding Authors:  Ru-Zhi Wang     E-mail:

Cite this article: 

Qi Liang(梁琦), Meng-Qi Yang(杨孟骐), Chang-Hao Wang(王长昊), and Ru-Zhi Wang(王如志) A simple method to synthesize worm-like AlN nanowires and its field emission studies 2021 Chin. Phys. B 30 087302

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