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Special Issue:
TOPICAL REVIEW — Exciton physics: Fundamentals, materials and devices
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| SPECIAL TOPIC — Exciton physics: Fundamentals, materials and devices |
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Layer-dependent exciton dynamics in InSe/WS2 heterostructures |
| Siyao Li(李思垚), Yufan Wang(王雨凡), Zhiqiang Ming(明志强), Yong Liu(刘勇), Lanyu Huang(黄岚雨), Siman Liu(刘思嫚), Jialong Li(李佳龙), Yulin Chen(成昱霖), Zhoujuan Xu(徐周娟), Zeyu Liu(刘泽宇), Danliang Zhang(张丹亮), and Xiao Wang(王笑)† |
| Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China |
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Abstract Understanding interlayer charge transfer is crucial for elucidating interface interactions in heterostructures. As the layer number can significantly influence the interface coupling and band alignment, the charge transfer behaviors can be largely regulated. Here, we constructed two-dimensional (2D) heterostructures consisting of monolayer WS$_{2}$ and few-layer InSe to investigate the impact of InSe thickness on exciton dynamics. We performed photoluminescence (PL) spectroscopy and lifetime measurements on pristine few-layer InSe and the heterostructures with different InSe thicknesses. For pristine InSe layers, we found a non-monotonic layer dependence on PL lifetime, which can be attributed to the interplay between the indirect-to-direct bandgap transition and surface recombination effects. For heterostructures, we demonstrated that the type I band alignment of the heterostructure facilitates electron and hole transfer from monolayer WS$_2$ to InSe. As the InSe layer number increases, the reduction in conduction band minimum (CBM) enhances the driving force for charge transfer, thereby improving the transfer efficiency. Furthermore, we fabricated and characterized a WS$_{2}$/InSe optoelectronic device. By analyzing bias voltage dependent PL spectra, we further demonstrated that the trions in WS$_{2}$ within the heterostructure are positively charged ($X^+$), and their emission intensity can be efficiently modulated by applying different biases. This study not only reveals the layer-dependent characteristics of band alignment and interlayer charge transfer in heterostructures but also provides valuable insights for the applications of 2D semiconductors in optoelectronic devices.
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Received: 12 February 2025
Revised: 26 March 2025
Accepted manuscript online: 31 March 2025
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PACS:
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78.67.-n
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(Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures)
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71.35.-y
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(Excitons and related phenomena)
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71.35.Pq
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(Charged excitons (trions))
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| Fund: This work was supported by the National Natural Science Foundation of China (Grant Nos. 92263107, U23A20570, 52221001, 62090035, and 52022029) and the Hunan Provincial Natural Science Foundation of China (Grant No. 2024RC1034). |
Corresponding Authors:
Xiao Wang
E-mail: xiao_wang@hnu.edu.cn
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Cite this article:
Siyao Li(李思垚), Yufan Wang(王雨凡), Zhiqiang Ming(明志强), Yong Liu(刘勇), Lanyu Huang(黄岚雨), Siman Liu(刘思嫚), Jialong Li(李佳龙), Yulin Chen(成昱霖), Zhoujuan Xu(徐周娟), Zeyu Liu(刘泽宇), Danliang Zhang(张丹亮), and Xiao Wang(王笑) Layer-dependent exciton dynamics in InSe/WS2 heterostructures 2025 Chin. Phys. B 34 097802
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