Comparative study on characteristics of Si-based AlGaN/GaN recessed MIS-HEMTs with HfO2 and Al2O3 gate insulators

doi:10.1088/1674-1056/ab8daa

Abstract Two types of enhancement-mode (E-mode) AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with different gate insulators are fabricated on Si substrates. The HfO₂ gate insulator and the Al₂O₃ gate insulator each with a thickness of 30 nm are grown by the plasma-enhanced atomic layer deposition (PEALD). The energy band diagrams of two types of dielectric MIS-HEMTs are compared. The breakdown voltage (V_BR) of HfO₂ dielectric layer and Al₂O₃ dielectric layer are 9.4 V and 15.9 V, respectively. With the same barrier thickness, the transconductance of MIS-HEMT with HfO₂ is larger. The threshold voltage (Vth) of the HfO₂ and Al₂O₃ MIS-HEMT are 2.0 V and 2.4 V, respectively, when the barrier layer thickness is 0 nm. The C-V characteristics are in good agreement with the Vth's transfer characteristics. As the barrier layer becomes thinner, the drain current density decreases sharply. Due to the dielectric/AlGaN interface is very close to the channel, the scattering of interface states will lead the electron mobility to decrease. The current collapse and the R_on of Al₂O₃ MIS-HEMT are smaller at the maximum gate voltage. As Al₂O₃ has excellent thermal stability and chemical stability, the interface state density of Al₂O₃/AlGaN is less than that of HfO₂/AlGaN.

Keywords: AlGaN/GaN enhancement-mode MIS-HEMT HfO₂ Al₂O₃

Received: 18 March 2020
Revised: 24 April 2020
Accepted manuscript online:

PACS:	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	73.40.Rw	(Metal-insulator-metal structures)
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	73.61.Ey	(III-V semiconductors)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61974111, 11690042, and 61974115), the National Pre-research Foundation of China (Grant No. 31512050402), and the Fund of Innovation Center of Radiation Application, China (Grant No. KFZC2018040202).

Corresponding Authors: Chong Wang, Chong Wang
E-mail: chongw@xidian.edu.cn;xfzheng@mail.xidian.edu.cn

Cite this article:

Yao-Peng Zhao(赵垚澎), Chong Wang(王冲), Xue-Feng Zheng(郑雪峰), Xiao-Hua Ma(马晓华), Kai Liu(刘凯), Ang Li(李昂), Yun-Long He(何云龙), Yue Hao(郝跃) Comparative study on characteristics of Si-based AlGaN/GaN recessed MIS-HEMTs with HfO₂ and Al₂O₃ gate insulators 2020 Chin. Phys. B 29 087304

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Comparative study on characteristics of Si-based AlGaN/GaN recessed MIS-HEMTs with HfO2 and Al2O3 gate insulators

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Comparative study on characteristics of Si-based AlGaN/GaN recessed MIS-HEMTs with HfO₂ and Al₂O₃ gate insulators