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Chin. Phys. B, 2023, Vol. 32(1): 018504    DOI: 10.1088/1674-1056/ac6dbd

A self-driven photodetector based on a SnS2/WS2 van der Waals heterojunction with an Al2O3 capping layer

Hsiang-Chun Wang(王祥骏)1, Yuheng Lin(林钰恒)1, Xiao Liu(刘潇)1, Xuanhua Deng(邓煊华)1, Jianwei Ben(贲建伟)1, Wenjie Yu(俞文杰)2, Deliang Zhu(朱德亮)1, and Xinke Liu(刘新科)1,†
1 College of Materials Science and Engineering, Institute of Microelectronics(IME), Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, Shenzhen 518060, China;
2 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
Abstract  Photodetectors based on two-dimensional (2D) materials have attracted considerable attention because of their unique properties. To further improve the performance of self-driven photodetectors based on van der Waals heterojunctions, a conductive band minimum (CBM) matched self-driven SnS2/WS2 van der Waals heterojunction photodetector based on a SiO2/Si substrate has been designed. The device exhibits a positive current at zero voltage under 365 nm laser illumination. This is attributed to the built-in electric field at the interface of the SnS2 and WS2 layer, which will separate and transport the photogenerated carriers, even at zero bias voltage. In addition, the Al2O3 layer is covered by the surface of the SnS2/WS2 photodetector to further improve the performance, because the Al2O3 layer will introduce tensile stress on the surface of the 2D materials leading to a higher electron concentration and smaller effective mass of electrons in the films. This work provides an idea for the research of self-driven photodetectors based on a van der Waals heterogeneous junction.
Keywords:  SnS2/WS2 heterogeneous junction      Al2O3 layer      self-driven      photodetector  
Received:  17 January 2022      Revised:  26 March 2022      Accepted manuscript online:  07 May 2022
PACS:  85.60.Bt (Optoelectronic device characterization, design, and modeling)  
  85.60.Gz (Photodetectors (including infrared and CCD detectors))  
  68.47.Fg (Semiconductor surfaces)  
  73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61974144, 62004127, and 12074263), the Science and Technology Foundation of Shenzhen (Grant No. JSGG20191129114216474), and the "National" Taipei University of Technology-Shenzhen University Joint Research Program, China (Grant No. 2020009).
Corresponding Authors:  Xinke Liu     E-mail:

Cite this article: 

Hsiang-Chun Wang(王祥骏), Yuheng Lin(林钰恒), Xiao Liu(刘潇), Xuanhua Deng(邓煊华),Jianwei Ben(贲建伟), Wenjie Yu(俞文杰), Deliang Zhu(朱德亮), and Xinke Liu(刘新科) A self-driven photodetector based on a SnS2/WS2 van der Waals heterojunction with an Al2O3 capping layer 2023 Chin. Phys. B 32 018504

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