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Chin. Phys. B, 2022, Vol. 31(7): 077701    DOI: 10.1088/1674-1056/ac3bab

Improved performance of MoS2 FET by in situ NH3 doping in ALD Al2O3 dielectric

Xiaoting Sun(孙小婷)1,2, Yadong Zhang(张亚东)2, Kunpeng Jia(贾昆鹏)2, Guoliang Tian(田国良)2,3, Jiahan Yu(余嘉晗)2, Jinjuan Xiang(项金娟)2, Ruixia Yang(杨瑞霞)1, Zhenhua Wu(吴振华)2,3,†, and Huaxiang Yin(殷华湘)2,3,‡
1 School of Information Engineering, Hebei University of Technology, Tianjin 300401, China;
2 Key Laboratory of Microelectronics Device and Integrated Technology, Institute of Microelectronics Chinese Academy of Sciences, Beijing 100029, China;
3 University of Chinese Academy of Sciences, Beijing 100049, China
Abstract  Since defects such as traps and oxygen vacancies exist in dielectrics, it is difficult to fabricate a high-performance MoS$_{2}$ field-effect transistor (FET) using atomic layer deposition (ALD) Al$_{2}$O$_{3}$ as the gate dielectric layer. In this paper, NH$_{3}$ in situ doping, a process treatment approach during ALD growth of Al$_{2}$O$_{3}$, is used to decrease these defects for better device characteristics. MoS$_{2}$ FET has been well fabricated with this technique and the effect of different NH$_{3}$ in situ doping sequences in the growth cycle has been investigated in detail. Compared with counterparts, those devices with NH$_{3}$ in situ doping demonstrate obvious performance enhancements: $I_{\rm on}/I_{\rm off}$ is improved by one order of magnitude, from $1.33\times 10^{5}$ to $3.56\times 10^{6}$, the threshold voltage shifts from $-0.74 $ V to $-0.12$ V and a small subthreshold swing of 105 mV/dec is achieved. The improved MoS$_{2}$ FET performance is attributed to nitrogen doping by the introduction of NH$_{3}$ during the Al$_{2}$O$_{3}$ ALD growth process, which leads to a reduction in the surface roughness of the dielectric layer and the repair of oxygen vacancies in the Al$_{2}$O$_{3}$ layer. Furthermore, the MoS$_{2}$ FET processed by in situ NH$_{3}$ doping after the Al and O precursor filling cycles demonstrates the best performance; this may be because the final NH$_{3}$ doping after film growth restores more oxygen vacancies to screen more charge scattering in the MoS$_{2}$ channel. The reported method provides a promising way to reduce charge scattering in carrier transport for high-performance MoS$_{2 }$ devices.
Keywords:  MoS2      Al2O3 dielectric      NH3 in-situ doping      oxygen vacancy  
Received:  25 September 2021      Revised:  14 November 2021      Accepted manuscript online:  20 November 2021
PACS:  77.22.Ch (Permittivity (dielectric function))  
  85.30.-z (Semiconductor devices)  
  81.07.-b (Nanoscale materials and structures: fabrication and characterization)  
  74.62.Dh (Effects of crystal defects, doping and substitution)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61774168 and 11764008) and the Opening Project of Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences.
Corresponding Authors:  Zhenhua Wu, Huaxiang Yin     E-mail:;

Cite this article: 

Xiaoting Sun(孙小婷), Yadong Zhang(张亚东), Kunpeng Jia(贾昆鹏), Guoliang Tian(田国良), Jiahan Yu(余嘉晗), Jinjuan Xiang(项金娟), Ruixia Yang(杨瑞霞), Zhenhua Wu(吴振华), and Huaxiang Yin(殷华湘) Improved performance of MoS2 FET by in situ NH3 doping in ALD Al2O3 dielectric 2022 Chin. Phys. B 31 077701

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