1 Hanshan Normal University, Chaozhou 521041, China; 2 No.; 5 Electronics Research Institute of the Ministry of Industry and Information Technology, Guangzhou 510610, China; 3 Shenzhen University, Shenzhen 518000, China; 4 School of Microelectronics, Xidian University, Xi'an 710071, China; 5 School of Automation and Electrical Engineering, Shenyang Ligong University, Shenyang 110159, China; 6 Yibin Research Institute, Jilin University, Yibin 644000, China
Abstract AlGaN/GaN heterojunction field-effect transistors (HFETs) with p-GaN cap layer are developed for normally-off operation, in which an in-situ grown AlN layer is utilized as the gate insulator. Compared with the SiNx gate insulator, the AlN/p-GaN interface presents a more obvious energy band bending and a wider depletion region, which helps to positively shift the threshold voltage. In addition, the relatively large conduction band offset of AlN/p-GaN is beneficial to suppress the gate leakage current and enhance the gate breakdown voltage. Owing to the introduction of AlN layer, normally-off p-GaN capped AlGaN/GaN HFET with a threshold voltage of 4 V and a gate swing of 13 V is realized. Furthermore, the field-effect mobility is approximately 1500 cm2·V-1·s-1 in the 2DEG channel, implying a good device performance.
(Semiconductor-device characterization, design, and modeling)
Fund: Supported by the National Natural Science Foundation of China (Grant No. 61904207), scientific research support foundation for introduced high-level talents of Shenyang Ligong University (Grant No. 1010147000914), and the Natural Science Foundation of Sichuan Province, China (Grant No. 2022NSFSC0886).
Corresponding Authors:
Jiyao Du, Liuan Li
E-mail: du_jiyao@163.com;liliuan@jlu.edu.cn
[1] Okita H, Hikita M and Nishio A 2017 IEEE Trans. Electron Devices64 1026 [2] Kukhtyaeva O B and Egorkin V I 2019 J. Phys.: Conf. Series1410 012192 [3] Hao R H, Fu K and Yu G H 2016 Appl. Phys. Lett.109 152106 [4] Niu D, Wang Q, Li Wei, et al. 2020 Jpn. J. Appl. Phys.59 111001 [5] Zhou Q, Liu L and Zhang A B 2016 IEEE Electron Device Lett.37 165 [6] Pu T F, Wang X and Huang Q 2019 IEEE Electron Device Lett.40 185 [7] Pu T F, Huang Q and Zhang T 2018 Superlatt. Microstruct.120 448 [8] Pu T F, Chen Y and Li X B 2020 J. Phys. D53 415104 [9] Wang C C, Hua M Y and Chen J T 2020 IEEE Electron Device Lett.41 545 [10] Jiang H X and Lyu Q F 2021 IEEE Trans. Electron Devices68 653 [11] Li X D, Hove M V and Zhao M 2017 IEEE Electron Device Lett.38 918 [12] Tang Z K, Jiang Q M and Lu Y Y 2013 IEEE Electron Device Lett.34 1373 [13] Han P C, Yan Z Z, Wu C H, et al. 2019 IEEE 31th International Symposium on Power Semiconductor Devices and ICs (ISPSD) [14] Yu C J, Hsu C W, Wu M C, et al. 2020 IEEE Electron Device Lett.41 673 [15] He Y L, Zhang F, Liu K, et al. 2021 Chin. Phys. B31 068501 [16] Lee F, Su L Y and Wang C H 2015 IEEE Electron Device Lett.36 232 [17] Hwang I J, Kim J and Choi H S 2013 IEEE Electron Device Lett.34 202 [18] Sugiyama T, Lida D and Iwaya M 2010 Phys. Status Solidi C7 1980 [19] Jiang H X, Zhu R Q and Lyu Q F 2019 IEEE Electron Device Lett.40 530 [20] Tang X, Li B K and Moghadam H A 2018 IEEE Electron Device Lett.39 8 [21] Huang S, Jiang Q, Yang S, et al. 2013 IEEE Electron Device Lett.34 193 [22] Sugiyama T, lida D, Iwaya M, et al. 2010 Phys. Stat. Solidi C7 1980 [23] Wu T L, Marcon D, You S, et al. 2015 IEEE Electron Device Lett.36 1001 [24] Stoffels S, Posthuma N, Decoutere S, et al. 2019 IEEE International Reliability Physics Symposium (IRPS) [25] Ťapajna M, Hilt O, Bahat-Treidel E, et al. 2016 IEEE Electron Device Lett.37 385 [26] Stockman A, Masin F, Meneghini M, et al. 2018 IEEE Trans. Electron Devices65 5365 [27] He J, Wei J, Yang S, et al. 2019 IEEE Trans. Electron Devices66 3453
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