Simulation design of normally-off AlGaN/GaN high-electron-mobility transistors with p-GaN Schottky hybrid gate

doi:10.1088/1674-1056/ac3739

Abstract A novel normally-off AlGaN/GaN high-electron-mobility transistor (HEMT) with a p-GaN Schottky hybrid gate (PSHG) is proposed, and compared with the conventional p-GaN normally-off AlGaN/GaN HEMTs. This structure can be realized by selective etching of p-GaN layer, which enables the Schottky junction and PN junction to control the channel charge at the same time. The direct current (DC) and switching characteristics of the PSHG HEMTs are simulated by Slivaco TCAD, and the p-GaN HEMTs and conventional normally-on HEMTs are also simulated for comparison. The simulation results show that the PSHG HEMTs have a higher current density and a lower on-resistance than p-GaN HEMTs, which is more obvious with the decrease of p-GaN ratios of the PSHG HEMTs. The breakdown voltage and threshold voltage of the PSHG HEMTs are very close to those of the p-GaN HEMTs. In addition, the PSHG HEMTs have a higher switching speed than the conventional normally-on HEMTs, and the p-GaN layer ratio has no obvious effect on the switching speed.

Keywords: normally-off high-electron-mobility transistor AlGaN/GaN p-GaN

Received: 26 August 2021
Revised: 22 October 2021
Accepted manuscript online: 06 November 2021

PACS:	85.30.De	(Semiconductor-device characterization, design, and modeling)
	85.30.Tv	(Field effect devices)

Fund: This work was supported by the National Natural Science Foundation of China (Grant No. 62004150), Postdoctoral Science Foundation of China (Grant No. 2018M643575), the Fundamental Research Funds for the Central Universities, and the Innovation Fund of Xidian University (Grant No. JB211104).

Corresponding Authors: Yun-Long He
E-mail: ylhe@xidian.edu.cn

Cite this article:

Yun-Long He(何云龙), Fang Zhang(张方), Kai Liu(刘凯), Yue-Hua Hong(洪悦华), Xue-Feng Zheng(郑雪峰),Chong Wang(王冲), Xiao-Hua Ma(马晓华), and Yue Hao(郝跃) Simulation design of normally-off AlGaN/GaN high-electron-mobility transistors with p-GaN Schottky hybrid gate 2022 Chin. Phys. B 31 068501

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Simulation design of normally-off AlGaN/GaN high-electron-mobility transistors with p-GaN Schottky hybrid gate

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