| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Prev
Next
|
|
|
Fluorine-plasma treated AlGaN/GaN high electronic mobility transistors under off-state overdrive stress |
| Dongyan Zhao(赵东艳)1, Yubo Wang(王于波)1, Yanning Chen(陈燕宁)1,2, Jin Shao(邵瑾)1, Zhen Fu(付振)2, Fang Liu(刘芳)2, Yanrong Cao(曹艳荣)3,4,†, Faqiang Zhao(赵法强)1, Mingchen Zhong(钟明琛)2, Yasong Zhang(张亚松)3,‡, Maodan Ma(马毛旦)3, Hanghang Lv(吕航航)3, Zhiheng Wang(王志恒)3, Ling Lv(吕玲)4, Xuefeng Zheng(郑雪峰)4, and Xiaohua Ma(马晓华)4 |
1 Beijing Engineering Research Center of High-reliability IC with Power Industrial Grade, Beijing Smart-Chip Microelectronics Technology Co., Ltd., Beijing 100192, China;
2 Beijing Chip Identification Technology Co., Ltd., Beijing 102200, China;
3 School of Electro-Mechanical Engineering, Xidian University, Xi'an 710071, China;
4 Key Lab of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China |
|
|
|
|
Abstract Influences of off-state overdrive stress on the fluorine-plasma treated AlGaN/GaN high-electronic mobility transistors (HEMTs) are experimentally investigated. It is observed that the reverse leakage current between the gate and source decreases after the off-state stress, whereas the current between the gate and drain increases. By analyzing those changes of the reverse currents based on the Frenkel-Poole model, we realize that the ionization of fluorine ions occurs during the off-state stress. Furthermore, threshold voltage degradation is also observed after the off-state stress, but the degradations of AlGaN/GaN HEMTs treated with different F-plasma RF powers are different. By comparing the differences between those devices, we find that the F-ions incorporated in the GaN buffer layer play an important role in averting degradation. Lastly, suggestions to obtain a more stable fluorine-plasma treated AlGaN/GaN HEMT are put forwarded.
|
Received: 06 May 2022
Revised: 29 June 2022
Accepted manuscript online: 18 July 2022
|
|
PACS:
|
73.61.Ey
|
(III-V semiconductors)
|
| |
73.40.Kp
|
(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
|
| |
73.40.Qv
|
(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
|
|
| Fund: Project supported by the Laboratory Open Fund of Beijing Smart-Chip Microelectronics Technology Co., Ltd and the National Natural Science Foundation of China (Grant Nos. 11690042 and 12035019), the National Major Scientific Research Instrument Projects (Grant No. 61727804), and the Natural Science Foundation of Shaanxi Province, China (Grant No. 2022-JM-386). |
Corresponding Authors:
Yanrong Cao, Yasong Zhang
E-mail: yrcao@mail.xidian.edu.cn;568695351@qq.com
|
Cite this article:
Dongyan Zhao(赵东艳), Yubo Wang(王于波), Yanning Chen(陈燕宁), Jin Shao(邵瑾), Zhen Fu(付振), Fang Liu(刘芳), Yanrong Cao(曹艳荣), Faqiang Zhao(赵法强), Mingchen Zhong(钟明琛), Yasong Zhang(张亚松), Maodan Ma(马毛旦), Hanghang Lv(吕航航), Zhiheng Wang(王志恒), Ling Lv(吕玲), Xuefeng Zheng(郑雪峰), and Xiaohua Ma(马晓华) Fluorine-plasma treated AlGaN/GaN high electronic mobility transistors under off-state overdrive stress 2022 Chin. Phys. B 31 117301
|
[1] Buniatyan V V and Aroutiounian V M 2007 J. Phys. D: Appl. Phys. 40 6355
[2] Lian G 2020 7th International Forum on Electrical Engineering and Automation (IFEEA), September 25-27, 2020, Hefei, China, pp. 149-152
[3] Perkins S, Arvanitopoulos A, Gyftakis K N and Lophitis N 2018 IEEE 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), May 16-18, 2018, Xi'an, China, pp. 174-178
[4] Cai Y, Zhou Y, Chen K J and Lau K M 2005 IEEE Electron Device Lett. 26 435
[5] Wang Y, Hu S D, Guo J W, Wu H, Liu T and Jiang J 2022 IEEE J. Electron Devices Soc. 10 197
[6] Albahrani S A, Heuken L, Schwantuschke D, Gneiting T, Burghartz J N and Khandelwal S 2020 IEEE Trans. Electron Devices 67 455
[7] Yadav Y K, Upadhyay B B, Meer M, Bhardwaj N, Ganguly S and Saha D 2019 IEEE Electron Device Lett. 40 67
[8] Kobayashi K W and Kumar V 2021 IEEE Microw Wirel Compon. Lett. 31 885
[9] Cai Y, Zhou Y, Lau K M and Chen K J 2006 IEEE Trans. Electron Devices 53 2207
[10] Wu C H, Han P C, Luc Q H, Hsu C Y, Hsieh T E, Wang H C, Lin Y K, Chang P C, Lin Y C and Chang E Y 2018 IEEE J. Electron Devices Soc. 6 893
[11] Chen K J, Yuan L, Wang M J, Chen H, Huang S, Zhou Q, Zhou C, Li B K and Wang J N 2011 IEEE International Electron Devices Meeting, December 5-7, 2011, Washington, DC, USA, pp. 19.4.1-19.4.4
[12] Mao L F 2019 ECS J. Solid State Sci. Technol. 8 472
[13] Yong C, Zhou Y, Chen K J and Lau K M 2005 IEEE Electron Device Lett. 26 435
[14] Wang M J, Yuan L, Chen K J, Xu F J and Shen B 2009 J. Appl. Phys. 105 083519
[15] Ma C, Chen H, Zhou C, Huang S, Yuan L, Roberts J and Chen K J 2011 J. Appl. Phys. 110 114514
[16] Yi C W, Wang R N, Huang W, Tang W C W, Lau K M and Chen K J 2007 IEEE International Electron Devices Meeting, December 10-12, 2007, Washington, DC, USA, pp. 389-392
[17] Albany F, Curutchet A, Labat N, Lecourt F, Walasiak E, Maher H, Cordier Y, Defrance N and Malbert N 2021 IEEE 15th European Microwave Integrated Circuits Conference (EuMIC), January 10-15, 2021, Utrecht, Netherlands, pp. 237-240
[18] Yang L, Hou B, Mi M H, Zhu J J, Zhang M, Zhu Q, He Y L, Chen L X, Zhou X W, Ma X H and Hao Y 2017 IEEE International Reliability Physics Symposium (IRPS), April 2-6, 2017, Monterey, CA, USA, pp. WB-2.1-WB-2.4
[19] Ma C Y, Chen H W, Zhou C H, Huang S, Yuan L, Roberts J, Kevin and Chen J 2011 J. Appl. Phys 110 114514
[20] Yang L, Zhou X W, Ma X H, Lv L, Cao Y R, Zhang J C and Hao Y 2017 Chin. Phys. B 26 017304
[21] Sun W W, Zheng X F, Fan S, Wang C, Du M, Zhang K and Chen W W 2015 Chin. Phys. B 24 017303
[22] Quan S, Hao Y, Ma X H, Xie Y B and Ma J G 2009 J. Semiconduct. 30 124002
[23] Ha W J, Chhajed S, Oh S J, Hwang S, Kim J K, Lee J H and Kim K S 2012 Appl. Phys. Lett. 100 132104
[24] Yeargan J R and Taylor H L 1968 J. Appl. Phys. 39 5600
[25] Ren J, Mou W J, Zhao L, Yan D W, Yu Z G, Yang G F, Xiao S Q and Gu X F 2017 IEEE Trans. Electron Devices 64 407
[26] Zheng X F, Chen A S, Zhang H, Wang X H, Wang Y Z, Hua N, Chen K, Wang M S, Zhang Q Y, Ma X H and Hao Y 2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), July 20-23, 2020, Singapore, pp. 1-4
[27] Zhang Y S, Cao Y R, Li P, Dai F, Zhu Q, Lv L, Ma X H and Hao Y 2016 IEEE 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), October 25-28, 2016, Hangzhou, China, pp. 1035-1037
[28] Joh J and Alamo J J A 2006 IEEE International Electron Devices Meeting, December 11-13, 2006, San Francisco, CA, USA, pp 1-4
[29] Ren J, Yan D W and Gu X F 2013 Acta Phys. Sin. 62 157202 (in Chinese)
[30] Ma X H, Yu H Y, Quan S, Yang L Y, Pan C Y, Yang L, Wang H, Zhang J C and Hao Y 2011 Chin. Phys. B 20 027303 |
| No Suggested Reading articles found! |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
Altmetric
|
|
blogs
Facebook pages
Wikipedia page
Google+ users
|
Online attention
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
View more on Altmetrics
|
|
|
