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CN 11-5639/O4
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Other articles related with "73.61.Ey":
107801 Yanxu Chen, Dongliang Xu, Kaikai Xu, Ning Zhang, Siyang Liu, Jianming Zhao, Qian Luo, Lukas W. Snyman, Jacobus W. Swart
  Optoelectronic properties analysis of silicon light-emitting diode monolithically integrated in standard CMOS IC
    Chin. Phys. B   2019 Vol.28 (10): 107801-107801 [Abstract] (135) [HTML 1 KB] [PDF 1215 KB] (59)
86105 Xue-Fei Liu, Zi-Jiang Luo, Xun Zhou, Jie-Min Wei, Yi Wang, Xiang Guo, Bing Lv, Zhao Ding
  Structural, mechanical, and electronic properties of 25 kinds of Ⅲ-V binary monolayers:A computational study with first-principles calculation
    Chin. Phys. B   2019 Vol.28 (8): 86105-086105 [Abstract] (53) [HTML 1 KB] [PDF 3949 KB] (74)
78501 Shu-Xiang Sun, Ming-Ming Chang, Meng-Ke Li, Liu-Hong Ma, Ying-Hui Zhong, Yu-Xiao Li, Peng Ding, Zhi Jin, Zhi-Chao Wei
  Effect of defects properties on InP-based high electron mobility transistors
    Chin. Phys. B   2019 Vol.28 (7): 78501-078501 [Abstract] (61) [HTML 1 KB] [PDF 1176 KB] (63)
67304 Si-Qin-Gao-Wa Bao, Xiao-Hua Ma, Wei-Wei Chen, Ling Yang, Bin Hou, Qing Zhu, Jie-Jie Zhu, Yue Hao
  Method of evaluating interface traps in Al2O3/AlGaN/GaN high electron mobility transistors
    Chin. Phys. B   2019 Vol.28 (6): 67304-067304 [Abstract] (55) [HTML 1 KB] [PDF 591 KB] (53)
67305 Tian-Ran Zhang, Fang Fang, Xiao-Lan Wang, Jian-Li Zhang, Xiao-Ming Wu, Shuan Pan, Jun-Lin Liu, Feng-Yi Jiang
  Aging mechanism of GaN-based yellow LEDs with V-pits
    Chin. Phys. B   2019 Vol.28 (6): 67305-067305 [Abstract] (50) [HTML 1 KB] [PDF 1504 KB] (50)
67701 Xue Ji, Wen-Xiu Dong, Yu-Min Zhang, Jian-Feng Wang, Ke Xu
  Fabrication and characterization of one-port surface acoustic wave resonators on semi-insulating GaN substrates
    Chin. Phys. B   2019 Vol.28 (6): 67701-067701 [Abstract] (113) [HTML 1 KB] [PDF 1232 KB] (66)
37302 Mingchen Hou, Gang Xie, Kuang Sheng
  Mechanism of Ti/Al/Ni/Au ohmic contacts to AlGaN/GaN heterostructures via laser annealing
    Chin. Phys. B   2019 Vol.28 (3): 37302-037302 [Abstract] (110) [HTML 1 KB] [PDF 2166 KB] (71)
27301 Sheng-Lei Zhao, Zhi-Zhe Wang, Da-Zheng Chen, Mao-Jun Wang, Yang Dai, Xiao-Hua Ma, Jin-Cheng Zhang, Yue Hao
  1.8-kV circular AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistor
    Chin. Phys. B   2019 Vol.28 (2): 27301-027301 [Abstract] (113) [HTML 1 KB] [PDF 507 KB] (85)
97203 Yi-Dong Wang, Jun Chen
  Modeling capacitance–voltage characteristic of TiW/p-InP Schottky barrier diode
    Chin. Phys. B   2018 Vol.27 (9): 97203-097203 [Abstract] (126) [HTML 1 KB] [PDF 1187 KB] (85)
97308 Chong Wang, Xin Wang, Xue-Feng Zheng, Yun Wang, Yun-Long He, Ye Tian, Qing He, Ji Wu, Wei Mao, Xiao-Hua Ma, Jin-Cheng Zhang, Yue Hao
  Characteristics and threshold voltage model of GaN-based FinFET with recessed gate
    Chin. Phys. B   2018 Vol.27 (9): 97308-097308 [Abstract] (162) [HTML 1 KB] [PDF 804 KB] (95)
97309 Sheng Zhang, Ke Wei, Yang Xiao, Xiao-Hua Ma, Yi-Chuan Zhang, Guo-Guo Liu, Tian-Min Lei, Ying-Kui Zheng, Sen Huang, Ning Wang, Muhammad Asif, Xin-Yu Liu
  Effect of SiN: Hx passivation layer on the reverse gate leakage current in GaN HEMTs
    Chin. Phys. B   2018 Vol.27 (9): 97309-097309 [Abstract] (233) [HTML 1 KB] [PDF 892 KB] (101)
47307 Ting-Ting Liu, Kai Zhang, Guang-Run Zhu, Jian-Jun Zhou, Yue-Chan Kong, Xin-Xin Yu, Tang-Sheng Chen
  Influence of fin architectures on linearity characteristics of AlGaN/GaNFinFETs
    Chin. Phys. B   2018 Vol.27 (4): 47307-047307 [Abstract] (137) [HTML 1 KB] [PDF 799 KB] (192)
28502 Shu-Xiang Sun, Zhi-Chao Wei, Peng-Hui Xia, Wen-Bin Wang, Zhi-Yong Duan, Yu-Xiao Li, Ying-Hui Zhong, Peng Ding, Zhi Jin
  Effects of proton irradiation at different incident angles on InAlAs/InGaAs InP-based HEMTs
    Chin. Phys. B   2018 Vol.27 (2): 28502-028502 [Abstract] (106) [HTML 0 KB] [PDF 1730 KB] (145)
87307 Bin Li, Shan-Jin Huang, Hai-Long Wang, Hua-Long Wu, Zhi-Sheng Wu, Gang Wang, Hao Jiang
  Performance improvement of InGaN/GaN multiple quantum well visible-light photodiodes by optimizing TEGa flow
    Chin. Phys. B   2017 Vol.26 (8): 87307-087307 [Abstract] (116) [HTML 1 KB] [PDF 379 KB] (129)
87308 Linna Zhao, Peihong Yu, Zixiang Guo, Dawei Yan, Hao Zhou, Jinbo Wu, Zhiqiang Cui, Huarui Sun, Xiaofeng Gu
  Progressive current degradation and breakdown behavior in GaN LEDs under high reverse bias stress
    Chin. Phys. B   2017 Vol.26 (8): 87308-087308 [Abstract] (151) [HTML 1 KB] [PDF 1376 KB] (152)
87311 Yangfeng Li, Yang Jiang, Junhui Die, Caiwei Wang, Shen Yan, Ziguang Ma, Haiyan Wu, Lu Wang, Haiqiang Jia, Wenxin Wang, Hong Chen
  Improvement of green InGaN-based LEDs efficiency using a novel quantum well structure
    Chin. Phys. B   2017 Vol.26 (8): 87311-087311 [Abstract] (302) [HTML 1 KB] [PDF 1381 KB] (239)
88504 Bin Ren, Hui Guo, Feng Shi, Hong-Chang Cheng, Hui Liu, Jian Liu, Zhi-Hui Shen, Yan-Li Shi, Pei Liu
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    Chin. Phys. B   2017 Vol.26 (8): 88504-088504 [Abstract] (121) [HTML 1 KB] [PDF 886 KB] (178)
47303 Hong-Yue Hao, Wei Xiang, Guo-Wei Wang, Ying-Qiang Xu, Xi Han, Yao-Yao Sun, Dong-Wei Jiang, Yu Zhang, Yong-Ping Liao, Si-Hang Wei, Zhi-Chuan Niu
  Etching mask optimization of InAs/GaSb superlattice mid-wavelength infared 640×512 focal plane array
    Chin. Phys. B   2017 Vol.26 (4): 47303-047303 [Abstract] (175) [HTML 1 KB] [PDF 3694 KB] (372)
37201 Lei Wang, Jiaqi Zhang, Liuan Li, Yutaro Maeda, Jin-Ping Ao
  Plasma-assisted surface treatment for low-temperature annealed ohmic contact on AlGaN/GaN heterostructure field-effect transistors
    Chin. Phys. B   2017 Vol.26 (3): 37201-037201 [Abstract] (202) [HTML 1 KB] [PDF 311 KB] (223)
37305 Pan Dai, Jianya Lu, Ming Tan, Qingsong Wang, Yuanyuan Wu, Lian Ji, Lifeng Bian, Shulong Lu, Hui Yang
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    Chin. Phys. B   2017 Vol.26 (3): 37305-037305 [Abstract] (337) [HTML 1 KB] [PDF 327 KB] (408)
37306 Jie Huang, Wenwen Gu, Qian Zhao
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28502 Min Guo, Zhi-You Guo, Jing Huang, Yang Liu, Shun-Yu Yao
  Improvement of the carrier distribution with GaN/InGaN/AlGaN/InGaN/GaN composition-graded barrier for InGaN-based blue light-emitting diode
    Chin. Phys. B   2017 Vol.26 (2): 28502-028502 [Abstract] (194) [HTML 1 KB] [PDF 385 KB] (221)
17304 Ling Yang(杨凌), Xiao-Wei Zhou(周小伟), Xiao-Hua Ma(马晓华), Ling Lv(吕玲), Yan-Rong Cao(曹艳荣), Jin-Cheng Zhang(张进成), Yue Hao(郝跃)
  Low power fluorine plasma effects on electrical reliability of AlGaN/GaN high electron mobility transistor
    Chin. Phys. B   2017 Vol.26 (1): 17304-017304 [Abstract] (138) [HTML 1 KB] [PDF 450 KB] (364)
117102 Qiang Li, Yufeng Li, Minyan Zhang, Wen Ding, Feng Yun
  Current spreading in GaN-based light-emitting diodes
    Chin. Phys. B   2016 Vol.25 (11): 117102-117102 [Abstract] (180) [HTML 1 KB] [PDF 1077 KB] (408)
117301 Miao Geng, Pei-Xian Li, Wei-Jun Luo, Peng-Peng Sun, Rong Zhang, Xiao-Hua Ma
  Small-signal modeling of GaN HEMT switch with a new intrinsic elements extraction method
    Chin. Phys. B   2016 Vol.25 (11): 117301-117301 [Abstract] (99) [HTML 1 KB] [PDF 1091 KB] (880)
108501 Shu-Xiang Sun, Hui-Fang Ji, Hui-Juan Yao, Sheng Li, Zhi Jin, Peng Ding, Ying-Hui Zhong
  Physical modeling of direct current and radio frequency characteristics for InP-based InAlAs/InGaAs HEMTs
    Chin. Phys. B   2016 Vol.25 (10): 108501-108501 [Abstract] (184) [HTML 1 KB] [PDF 416 KB] (646)
97202 Jun Chen, Jiabing Lv
  Spectral response modeling and analysis of p-n-p In0.53Ga0.47As/InP HPTs
    Chin. Phys. B   2016 Vol.25 (9): 97202-097202 [Abstract] (229) [HTML 1 KB] [PDF 233 KB] (213)
97305 Jia Luo, Gang Xiang, Tian Yu, Mu Lan, Xi Zhang
  Structural, electronic, and magnetic properties of transition-metal atom adsorbed two-dimensional GaAs nanosheet
    Chin. Phys. B   2016 Vol.25 (9): 97305-097305 [Abstract] (307) [HTML 1 KB] [PDF 761 KB] (337)
97306 Bo-Chao Zhao, Yang Lu, Wen-Zhe Han, Jia-Xin Zheng, Heng-Shuang Zhang, Pei-jun Ma, Xiao-Hua Ma, Yue Hao
  X-band inverse class-F GaN internally-matched power amplifier
    Chin. Phys. B   2016 Vol.25 (9): 97306-097306 [Abstract] (157) [HTML 1 KB] [PDF 861 KB] (555)
87308 Jia-Qi Zhang, Lei Wang, Liu-An Li, Qing-Peng Wang, Ying Jiang, Hui-Chao Zhu, Jin-Ping Ao
  Self-aligned-gate AlGaN/GaN heterostructure field-effect transistor with titanium nitride gate
    Chin. Phys. B   2016 Vol.25 (8): 87308-087308 [Abstract] (204) [HTML 1 KB] [PDF 1061 KB] (249)
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