Chin. Phys. B
Citation Search Quick Search

ISSN 1674-1056 (Print)
CN 11-5639/O4
About
   » About CPB
   » Editorial Board
   » SCI IF
   » Staff
   » Contact
Browse CPB
   » In Press
   » Current Issue
   » Earlier Issues
   » View by Fields
   » Top Downloaded
   » Sci Top Cited
Authors
   » Submit an Article
   » Manuscript Tracking
   » Call for Papers
   » Scope
   » Instruction for Authors
   » Copyright Agreement
   » Templates
   » Author FAQs
   » PACS
Referees
   » Review Policy
   » Referee Login
   » Referee FAQs
   » Editor in Chief Login
   » Editor Login
   » Office Login
Links
   »
Other articles related with "73.40.Qv":
107302 Si-Qi Jing, Xiao-Hua Ma, Jie-Jie Zhu, Xin-Chuang Zhang, Si-Yu Liu, Qing Zhu, Yue Hao
  Interface and border trapping effects in normally-off Al2O3/AlGaN/GaN MOS-HEMTs with different post-etch surface treatments
    Chin. Phys. B   2020 Vol.29 (10): 107302-107302 [Abstract] (10) [HTML 1 KB] [PDF 1123 KB] (4)
97301 Ji-Long Hao, Yun Bai, Xin-Yu Liu, Cheng-Zhan Li, Yi-Dan Tang, Hong Chen, Xiao-Li Tian, Jiang Lu, Sheng-Kai Wang
  Improved electrical properties of NO-nitrided SiC/SiO2 interface after electron irradiation
    Chin. Phys. B   2020 Vol.29 (9): 97301-097301 [Abstract] (26) [HTML 1 KB] [PDF 547 KB] (23)
87304 Yao-Peng Zhao, Chong Wang, Xue-Feng Zheng, Xiao-Hua Ma, Kai Liu, Ang Li, Yun-Long He, Yue Hao
  Comparative study on characteristics of Si-based AlGaN/GaN recessed MIS-HEMTs with HfO2 and Al2O3 gate insulators
    Chin. Phys. B   2020 Vol.29 (8): 87304-087304 [Abstract] (40) [HTML 1 KB] [PDF 1089 KB] (48)
64212 Zhen Liu, Wei-Guo Jia, Hong-Yu Wang, Yang Wang, Neimule Men-Ke, Jun-Ping Zhang
  Effect of dark soliton on the spectral evolution of bright soliton in a silicon-on-insulator waveguide
    Chin. Phys. B   2020 Vol.29 (6): 64212-064212 [Abstract] (45) [HTML 1 KB] [PDF 2058 KB] (68)
68503 Ling Zhu, Hai-Lian Liang, Xiao-Feng Gu, Jie Xu
  Design of a novel high holding voltage LVTSCR with embedded clamping diode
    Chin. Phys. B   2020 Vol.29 (6): 68503-068503 [Abstract] (46) [HTML 1 KB] [PDF 645 KB] (49)
47701 Zhen-Jie Tang, Rong Li, Xi-Wei Zhang
  Improvement of memory characteristics by employing a charge trapping layer with combining bent and flat energy bands
    Chin. Phys. B   2020 Vol.29 (4): 47701-047701 [Abstract] (77) [HTML 1 KB] [PDF 1331 KB] (80)
37301 Xin-Yu Liu, Ji-Long Hao, Nan-Nan You, Yun Bai, Yi-Dan Tang, Cheng-Yue Yang, Sheng-Kai Wang
  High-mobility SiC MOSFET with low density of interface traps using high pressure microwave plasma oxidation
    Chin. Phys. B   2020 Vol.29 (3): 37301-037301 [Abstract] (86) [HTML 1 KB] [PDF 1104 KB] (106)
38503 Jia-Fei Yao, Yu-Feng Guo, Zhen-Yu Zhang, Ke-Meng Yang, Mao-Lin Zhang, Tian Xia
  Numerical and analytical investigations for the SOI LDMOS with alternated high-k dielectric and step doped silicon pillars
    Chin. Phys. B   2020 Vol.29 (3): 38503-038503 [Abstract] (85) [HTML 1 KB] [PDF 637 KB] (87)
38505 Xian-Le Zhang, Peng-Ying Chang, Gang Du, Xiao-Yan Liu
  Role of remote Coulomb scattering on the hole mobility at cryogenic temperatures in SOI p-MOSFETs
    Chin. Phys. B   2020 Vol.29 (3): 38505-038505 [Abstract] (72) [HTML 1 KB] [PDF 667 KB] (92)
14203 Zhen Liu, Weiguo Jia, Yang Wang, Hongyu Wang, Neimule Men-Ke, Jun-Ping Zhang
  Propagation characteristics of parallel dark solitons in silicon-on-insulator waveguide
    Chin. Phys. B   2020 Vol.29 (1): 14203-014203 [Abstract] (97) [HTML 1 KB] [PDF 4913 KB] (77)
17302 Qian Chen, Songhe Yang, Lei Dong, Siyuan Cai, Jiaju Xu, Zongxiang Xu
  Tetraalkyl-substituted zinc phthalocyanines used as anode buffer layers for organic light-emitting diodes
    Chin. Phys. B   2020 Vol.29 (1): 17302-017302 [Abstract] (73) [HTML 1 KB] [PDF 2018 KB] (69)
128101 Jian-Ying Chen, Xin-Yuan Zhao, Lu Liu, Jing-Ping Xu
  Improved performance of back-gate MoS2 transistors by NH3-plasma treating high-k gate dielectrics
    Chin. Phys. B   2019 Vol.28 (12): 128101-128101 [Abstract] (146) [HTML 1 KB] [PDF 1778 KB] (130)
88502 Chao-Yang Han, Yuan Liu, Yu-Rong Liu, Ya-Yi Chen, Li Wang, Rong-Sheng Chen
  Negative gate bias stress effects on conduction and low frequency noise characteristics in p-type poly-Si thin-film transistors
    Chin. Phys. B   2019 Vol.28 (8): 88502-088502 [Abstract] (116) [HTML 1 KB] [PDF 558 KB] (109)
37201 Qi Li, Zhao-Yang Zhang, Hai-Ou Li, Tang-You Sun, Yong-He Chen, Yuan Zuo
  Stacked lateral double-diffused metal-oxide-semiconductor field effect transistor with enhanced depletion effect by surface substrate
    Chin. Phys. B   2019 Vol.28 (3): 37201-037201 [Abstract] (161) [HTML 1 KB] [PDF 1984 KB] (117)
17105 Zeng Liu, Pei-Gang Li, Yu-Song Zhi, Xiao-Long Wang, Xu-Long Chu, Wei-Hua Tang
  Review of gallium oxide based field-effect transistors and Schottky barrier diodes
    Chin. Phys. B   2019 Vol.28 (1): 17105-017105 [Abstract] (236) [HTML 1 KB] [PDF 5647 KB] (384)
97306 Yong-Liang Li, Qiu-Xia Xu, Wen-Wu Wang
  Key technologies for dual high-k and dual metal gate integration
    Chin. Phys. B   2018 Vol.27 (9): 97306-097306 [Abstract] (169) [HTML 1 KB] [PDF 1824 KB] (129)
97308 Chong Wang, Xin Wang, Xue-Feng Zheng, Yun Wang, Yun-Long He, Ye Tian, Qing He, Ji Wu, Wei Mao, Xiao-Hua Ma, Jin-Cheng Zhang, Yue Hao
  Characteristics and threshold voltage model of GaN-based FinFET with recessed gate
    Chin. Phys. B   2018 Vol.27 (9): 97308-097308 [Abstract] (228) [HTML 1 KB] [PDF 804 KB] (166)
97309 Sheng Zhang, Ke Wei, Yang Xiao, Xiao-Hua Ma, Yi-Chuan Zhang, Guo-Guo Liu, Tian-Min Lei, Ying-Kui Zheng, Sen Huang, Ning Wang, Muhammad Asif, Xin-Yu Liu
  Effect of SiN: Hx passivation layer on the reverse gate leakage current in GaN HEMTs
    Chin. Phys. B   2018 Vol.27 (9): 97309-097309 [Abstract] (322) [HTML 1 KB] [PDF 892 KB] (158)
67303 Chen Wang, Yi-Hong Xu, Song-Yan Chen, Cheng Li, Jian-Yuan Wang, Wei Huang, Hong-Kai Lai, Rong-Rong Guo
  Improved performance of Au nanocrystal nonvolatile memory by N2-plasma treatment on HfO2 blocking layer
    Chin. Phys. B   2018 Vol.27 (6): 67303-067303 [Abstract] (153) [HTML 0 KB] [PDF 1779 KB] (118)
68504 Li Wang, Yuan Liu, Kui-Wei Geng, Ya-Yi Chen, Yun-Fei En
  Degradation of current-voltage and low frequency noise characteristics under negative bias illumination stress in InZnO thin film transistors
    Chin. Phys. B   2018 Vol.27 (6): 68504-068504 [Abstract] (119) [HTML 0 KB] [PDF 1319 KB] (210)
47307 Ting-Ting Liu, Kai Zhang, Guang-Run Zhu, Jian-Jun Zhou, Yue-Chan Kong, Xin-Xin Yu, Tang-Sheng Chen
  Influence of fin architectures on linearity characteristics of AlGaN/GaNFinFETs
    Chin. Phys. B   2018 Vol.27 (4): 47307-047307 [Abstract] (189) [HTML 1 KB] [PDF 799 KB] (255)
38501 Xiaoyu Pan, Hongxia Guo, Yinhong Luo, Fengqi Zhang, Lili Ding
  Analysis of multiple cell upset sensitivity in bulk CMOS SRAM after neutron irradiation
    Chin. Phys. B   2018 Vol.27 (3): 38501-038501 [Abstract] (151) [HTML 0 KB] [PDF 2130 KB] (271)
107101 Zhan-Wei Shen, Feng Zhang, Sima Dimitrijev, Ji-Sheng Han, Guo-Guo Yan, Zheng-Xin Wen, Wan-Shun Zhao, Lei Wang, Xing-Fang Liu, Guo-Sheng Sun, Yi-Ping Zeng
  Comparative study of electrical characteristics for n-type 4H-SiC planar and trench MOS capacitors annealed in ambient NO
    Chin. Phys. B   2017 Vol.26 (10): 107101-107101 [Abstract] (153) [HTML 1 KB] [PDF 1086 KB] (330)
87304 Yanrong Wang, Hong Yang, Hao Xu, Weichun Luo, Luwei Qi, Shuxiang Zhang, Wenwu Wang, Jiang Yan, Huilong Zhu, Chao Zhao, Dapeng Chen, Tianchun Ye
  Stress-induced leakage current characteristics of PMOS fabricated by a new multi-deposition multi-annealing technique with full gate last process
    Chin. Phys. B   2017 Vol.26 (8): 87304-087304 [Abstract] (203) [HTML 1 KB] [PDF 1310 KB] (217)
77303 Fang-Lin Zheng, Cheng-Sheng Liu, Jia-Qi Ren, Yan-Ling Shi, Ya-Bin Sun, Xiao-Jin Li
  Analytical capacitance model for 14 nm FinFET considering dual-k spacer
    Chin. Phys. B   2017 Vol.26 (7): 77303-077303 [Abstract] (217) [HTML 1 KB] [PDF 1849 KB] (546)
77304 Zhao Qi, Ming Qiao, Yitao He, Bo Zhang
  High holding voltage SCR for robust electrostatic discharge protection
    Chin. Phys. B   2017 Vol.26 (7): 77304-077304 [Abstract] (215) [HTML 1 KB] [PDF 1057 KB] (341)
67301 Miao-Ling Que, Xian-Di Wang, Yi-Yao Peng, Cao-Feng Pan
  Flexible electrically pumped random lasing from ZnO nanowires based on metal-insulator-semiconductor structure
    Chin. Phys. B   2017 Vol.26 (6): 67301-067301 [Abstract] (402) [HTML 1 KB] [PDF 1951 KB] (396)
47306 Wei Mao, Hai-Yong Wang, Xiao-Fei Wang, Ming Du, Jin-Feng Zhang, Xue-Feng Zheng, Chong Wang, Xiao-Hua Ma, Jin-Cheng Zhang, Yue Hao
  Improvement of reverse blocking performance in vertical power MOSFETs with Schottky-drain-connected semisuperjunctions
    Chin. Phys. B   2017 Vol.26 (4): 47306-047306 [Abstract] (249) [HTML 1 KB] [PDF 9012 KB] (343)
27101 Li-Juan Wu, Zhong-Jie Zhang, Yue Song, Hang Yang, Li-Min Hu, Na Yuan
  Novel high-K with low specific on-resistance high voltage lateral double-diffused MOSFET
    Chin. Phys. B   2017 Vol.26 (2): 27101-027101 [Abstract] (184) [HTML 1 KB] [PDF 651 KB] (351)
27701 Xue-Li Ma, Hong Yang, Jin-Juan Xiang, Xiao-Lei Wang, Wen-Wu Wang, Jian-Qi Zhang, Hua-Xiang Yin, Hui-Long Zhu, Chao Zhao
  Crystallization behaviors of ultrathin Al-doped HfO2 amorphous films grown by atomic layer deposition
    Chin. Phys. B   2017 Vol.26 (2): 27701-027701 [Abstract] (229) [HTML 1 KB] [PDF 1226 KB] (727)
First page | Prev page | Next page | Last pagePage 1 of 6, 171 records
Copyright © the Chinese Physical Society
Address: Institute of Physics, Chinese Academy of Sciences, P. O. Box 603,Beijing 100190 China(100190)
Tel: 010-82649026   Fax: 010-82649027   E-Mail: cpb@aphy.iphy.ac.cn
Supported by Beijing Magtech Co. Ltd. Tel: 86-010-62662699 E-mail: support@magtech.com.cn