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CN 11-5639/O4
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Other articles related with "73.40.Qv":
47701 Zhen-Jie Tang, Rong Li, Xi-Wei Zhang
  Improvement of memory characteristics by employing a charge trapping layer with combining bent and flat energy bands
    Chin. Phys. B   2020 Vol.29 (4): 47701-047701 [Abstract] (13) [HTML 1 KB] [PDF 1331 KB] (8)
37301 Xin-Yu Liu, Ji-Long Hao, Nan-Nan You, Yun Bai, Yi-Dan Tang, Cheng-Yue Yang, Sheng-Kai Wang
  High-mobility SiC MOSFET with low density of interface traps using high pressure microwave plasma oxidation
    Chin. Phys. B   2020 Vol.29 (3): 37301-037301 [Abstract] (33) [HTML 1 KB] [PDF 1104 KB] (23)
38503 Jia-Fei Yao, Yu-Feng Guo, Zhen-Yu Zhang, Ke-Meng Yang, Mao-Lin Zhang, Tian Xia
  Numerical and analytical investigations for the SOI LDMOS with alternated high-k dielectric and step doped silicon pillars
    Chin. Phys. B   2020 Vol.29 (3): 38503-038503 [Abstract] (32) [HTML 1 KB] [PDF 637 KB] (16)
38505 Xian-Le Zhang, Peng-Ying Chang, Gang Du, Xiao-Yan Liu
  Role of remote Coulomb scattering on the hole mobility at cryogenic temperatures in SOI p-MOSFETs
    Chin. Phys. B   2020 Vol.29 (3): 38505-038505 [Abstract] (40) [HTML 1 KB] [PDF 667 KB] (44)
14203 Zhen Liu, Weiguo Jia, Yang Wang, Hongyu Wang, Neimule Men-Ke, Jun-Ping Zhang
  Propagation characteristics of parallel dark solitons in silicon-on-insulator waveguide
    Chin. Phys. B   2020 Vol.29 (1): 14203-014203 [Abstract] (48) [HTML 1 KB] [PDF 4913 KB] (39)
17302 Qian Chen, Songhe Yang, Lei Dong, Siyuan Cai, Jiaju Xu, Zongxiang Xu
  Tetraalkyl-substituted zinc phthalocyanines used as anode buffer layers for organic light-emitting diodes
    Chin. Phys. B   2020 Vol.29 (1): 17302-017302 [Abstract] (42) [HTML 1 KB] [PDF 2018 KB] (25)
128101 Jian-Ying Chen, Xin-Yuan Zhao, Lu Liu, Jing-Ping Xu
  Improved performance of back-gate MoS2 transistors by NH3-plasma treating high-k gate dielectrics
    Chin. Phys. B   2019 Vol.28 (12): 128101-128101 [Abstract] (107) [HTML 1 KB] [PDF 1778 KB] (97)
88502 Chao-Yang Han, Yuan Liu, Yu-Rong Liu, Ya-Yi Chen, Li Wang, Rong-Sheng Chen
  Negative gate bias stress effects on conduction and low frequency noise characteristics in p-type poly-Si thin-film transistors
    Chin. Phys. B   2019 Vol.28 (8): 88502-088502 [Abstract] (77) [HTML 1 KB] [PDF 558 KB] (69)
37201 Qi Li, Zhao-Yang Zhang, Hai-Ou Li, Tang-You Sun, Yong-He Chen, Yuan Zuo
  Stacked lateral double-diffused metal-oxide-semiconductor field effect transistor with enhanced depletion effect by surface substrate
    Chin. Phys. B   2019 Vol.28 (3): 37201-037201 [Abstract] (123) [HTML 1 KB] [PDF 1984 KB] (73)
17105 Zeng Liu, Pei-Gang Li, Yu-Song Zhi, Xiao-Long Wang, Xu-Long Chu, Wei-Hua Tang
  Review of gallium oxide based field-effect transistors and Schottky barrier diodes
    Chin. Phys. B   2019 Vol.28 (1): 17105-017105 [Abstract] (203) [HTML 1 KB] [PDF 5647 KB] (248)
97306 Yong-Liang Li, Qiu-Xia Xu, Wen-Wu Wang
  Key technologies for dual high-k and dual metal gate integration
    Chin. Phys. B   2018 Vol.27 (9): 97306-097306 [Abstract] (151) [HTML 1 KB] [PDF 1824 KB] (91)
97308 Chong Wang, Xin Wang, Xue-Feng Zheng, Yun Wang, Yun-Long He, Ye Tian, Qing He, Ji Wu, Wei Mao, Xiao-Hua Ma, Jin-Cheng Zhang, Yue Hao
  Characteristics and threshold voltage model of GaN-based FinFET with recessed gate
    Chin. Phys. B   2018 Vol.27 (9): 97308-097308 [Abstract] (195) [HTML 1 KB] [PDF 804 KB] (120)
97309 Sheng Zhang, Ke Wei, Yang Xiao, Xiao-Hua Ma, Yi-Chuan Zhang, Guo-Guo Liu, Tian-Min Lei, Ying-Kui Zheng, Sen Huang, Ning Wang, Muhammad Asif, Xin-Yu Liu
  Effect of SiN: Hx passivation layer on the reverse gate leakage current in GaN HEMTs
    Chin. Phys. B   2018 Vol.27 (9): 97309-097309 [Abstract] (271) [HTML 1 KB] [PDF 892 KB] (120)
67303 Chen Wang, Yi-Hong Xu, Song-Yan Chen, Cheng Li, Jian-Yuan Wang, Wei Huang, Hong-Kai Lai, Rong-Rong Guo
  Improved performance of Au nanocrystal nonvolatile memory by N2-plasma treatment on HfO2 blocking layer
    Chin. Phys. B   2018 Vol.27 (6): 67303-067303 [Abstract] (120) [HTML 0 KB] [PDF 1779 KB] (94)
68504 Li Wang, Yuan Liu, Kui-Wei Geng, Ya-Yi Chen, Yun-Fei En
  Degradation of current-voltage and low frequency noise characteristics under negative bias illumination stress in InZnO thin film transistors
    Chin. Phys. B   2018 Vol.27 (6): 68504-068504 [Abstract] (99) [HTML 0 KB] [PDF 1319 KB] (177)
47307 Ting-Ting Liu, Kai Zhang, Guang-Run Zhu, Jian-Jun Zhou, Yue-Chan Kong, Xin-Xin Yu, Tang-Sheng Chen
  Influence of fin architectures on linearity characteristics of AlGaN/GaNFinFETs
    Chin. Phys. B   2018 Vol.27 (4): 47307-047307 [Abstract] (164) [HTML 1 KB] [PDF 799 KB] (216)
38501 Xiaoyu Pan, Hongxia Guo, Yinhong Luo, Fengqi Zhang, Lili Ding
  Analysis of multiple cell upset sensitivity in bulk CMOS SRAM after neutron irradiation
    Chin. Phys. B   2018 Vol.27 (3): 38501-038501 [Abstract] (133) [HTML 0 KB] [PDF 2130 KB] (242)
107101 Zhan-Wei Shen, Feng Zhang, Sima Dimitrijev, Ji-Sheng Han, Guo-Guo Yan, Zheng-Xin Wen, Wan-Shun Zhao, Lei Wang, Xing-Fang Liu, Guo-Sheng Sun, Yi-Ping Zeng
  Comparative study of electrical characteristics for n-type 4H-SiC planar and trench MOS capacitors annealed in ambient NO
    Chin. Phys. B   2017 Vol.26 (10): 107101-107101 [Abstract] (132) [HTML 1 KB] [PDF 1086 KB] (256)
87304 Yanrong Wang, Hong Yang, Hao Xu, Weichun Luo, Luwei Qi, Shuxiang Zhang, Wenwu Wang, Jiang Yan, Huilong Zhu, Chao Zhao, Dapeng Chen, Tianchun Ye
  Stress-induced leakage current characteristics of PMOS fabricated by a new multi-deposition multi-annealing technique with full gate last process
    Chin. Phys. B   2017 Vol.26 (8): 87304-087304 [Abstract] (167) [HTML 1 KB] [PDF 1310 KB] (168)
77303 Fang-Lin Zheng, Cheng-Sheng Liu, Jia-Qi Ren, Yan-Ling Shi, Ya-Bin Sun, Xiao-Jin Li
  Analytical capacitance model for 14 nm FinFET considering dual-k spacer
    Chin. Phys. B   2017 Vol.26 (7): 77303-077303 [Abstract] (194) [HTML 1 KB] [PDF 1849 KB] (421)
77304 Zhao Qi, Ming Qiao, Yitao He, Bo Zhang
  High holding voltage SCR for robust electrostatic discharge protection
    Chin. Phys. B   2017 Vol.26 (7): 77304-077304 [Abstract] (187) [HTML 1 KB] [PDF 1057 KB] (280)
67301 Miao-Ling Que, Xian-Di Wang, Yi-Yao Peng, Cao-Feng Pan
  Flexible electrically pumped random lasing from ZnO nanowires based on metal-insulator-semiconductor structure
    Chin. Phys. B   2017 Vol.26 (6): 67301-067301 [Abstract] (369) [HTML 1 KB] [PDF 1951 KB] (328)
47306 Wei Mao, Hai-Yong Wang, Xiao-Fei Wang, Ming Du, Jin-Feng Zhang, Xue-Feng Zheng, Chong Wang, Xiao-Hua Ma, Jin-Cheng Zhang, Yue Hao
  Improvement of reverse blocking performance in vertical power MOSFETs with Schottky-drain-connected semisuperjunctions
    Chin. Phys. B   2017 Vol.26 (4): 47306-047306 [Abstract] (179) [HTML 1 KB] [PDF 9012 KB] (297)
27101 Li-Juan Wu, Zhong-Jie Zhang, Yue Song, Hang Yang, Li-Min Hu, Na Yuan
  Novel high-K with low specific on-resistance high voltage lateral double-diffused MOSFET
    Chin. Phys. B   2017 Vol.26 (2): 27101-027101 [Abstract] (148) [HTML 1 KB] [PDF 651 KB] (294)
27701 Xue-Li Ma, Hong Yang, Jin-Juan Xiang, Xiao-Lei Wang, Wen-Wu Wang, Jian-Qi Zhang, Hua-Xiang Yin, Hui-Long Zhu, Chao Zhao
  Crystallization behaviors of ultrathin Al-doped HfO2 amorphous films grown by atomic layer deposition
    Chin. Phys. B   2017 Vol.26 (2): 27701-027701 [Abstract] (182) [HTML 1 KB] [PDF 1226 KB] (643)
18501 Xiao-Yu Pan(潘霄宇), Hong-Xia Guo(郭红霞), Yin-Hong Luo(罗尹虹), Feng-Qi Zhang(张凤祁), Li-Li Ding(丁李利), Jia-Nan Wei(魏佳男), Wen Zhao(赵雯)
  Impact of neutron-induced displacement damage on the single event latchup sensitivity of bulk CMOS SRAM
    Chin. Phys. B   2017 Vol.26 (1): 18501-018501 [Abstract] (235) [HTML 1 KB] [PDF 310 KB] (327)
18502 Yiming Liao(廖轶明), Xiaoli Ji(纪小丽), Yue Xu(徐跃), Chengxu Zhang(张城绪), Qiang Guo(郭强), Feng Yan(闫锋)
  Random telegraph noise on the threshold voltage of multi-level flash memory
    Chin. Phys. B   2017 Vol.26 (1): 18502-018502 [Abstract] (252) [HTML 1 KB] [PDF 549 KB] (354)
108503 Shweta Tripathi
  A two-dimensional analytical modeling for channel potential and threshold voltage of short channel triple material symmetrical gate Stack (TMGS) DG-MOSFET
    Chin. Phys. B   2016 Vol.25 (10): 108503-108503 [Abstract] (146) [HTML 1 KB] [PDF 5433 KB] (560)
96109 Hongxia Guo, Lili Ding, Yao Xiao, Fengqi Zhang, Yinhong Luo, Wen Zhao, Yuanming Wang
  Pattern dependence in synergistic effects of total dose onsingle-event upset hardness
    Chin. Phys. B   2016 Vol.25 (9): 96109-096109 [Abstract] (149) [HTML 1 KB] [PDF 325 KB] (178)
96110 Lili Ding, Simone Gerardin, Marta Bagatin, Dario Bisello, Serena Mattiazzo, Alessandro Paccagnella
  Comparison of radiation degradation induced by x-rayand 3-MeV protons in 65-nm CMOS transistors
    Chin. Phys. B   2016 Vol.25 (9): 96110-096110 [Abstract] (232) [HTML 1 KB] [PDF 251 KB] (259)
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