1 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; 2 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101408, China; 3 Center of Materials Science and Optoelectronics Engineering, College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
Abstract High performance short-wavelength infrared PBn photodetectors based on InAs/GaSb/AlSb superlattices on GaSb substrate have been demonstrated. At 300 K, the device exhibits a 50% cut-off wavelength of μm as predicted from the band structure calculation; the device responsivity peaks at 0.85 A/W, corresponding to a quantum efficiency (QE) of 56% for 2.0 μm-thick absorption region. The dark current density of 1.03 A/cm is obtained under 50 mV applied bias. The device exhibits a saturated dark current shot noise limited specific detectivity () of 3.29cmHz/W (at a peak responsivity of 2.0 μm) under mV applied bias.
Fund: Project supported by the National Key Technologies R&D Program of China (Grant Nos. 2019YFA0705203 and 2018YFA0209104), Major Program of the National Natural Science Foundation of China (Grant No. 61790581), and Aeronautical Science Foundation of China (Grant No. 20182436004).
Junkai Jiang(蒋俊锴), Faran Chang(常发冉), Wenguang Zhou(周文广), Nong Li(李农), Weiqiang Chen(陈伟强), Dongwei Jiang(蒋洞微), Hongyue Hao(郝宏玥), Guowei Wang(王国伟), Donghai Wu(吴东海), Yingqiang Xu(徐应强), and Zhi-Chuan Niu(牛智川) High-performance extended short-wavelength infrared PBn photodetectors based on InAs/GaSb/AlSb superlattices 2023 Chin. Phys. B 32 038503
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