| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Design optimization of high breakdown voltage vertical GaN junction barrier Schottky diode with high-K/low-K compound dielectric structure |
| Kuiyuan Tian(田魁元), Yong Liu(刘勇), Jiangfeng Du(杜江锋)†, and Qi Yu(于奇) |
| State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China |
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Abstract A vertical junction barrier Schottky diode with a high-$K$/low-$K$ compound dielectric structure is proposed and optimized to achieve a high breakdown voltage (BV). There is a discontinuity of the electric field at the interface of high-$K$ and low-$K$ layers due to the different dielectric constants of high-$K$ and low-$K$ dielectric layers. A new electric field peak is introduced in the n-type drift region of junction barrier Schottky diode (JBS), so the distribution of electric field in JBS becomes more uniform. At the same time, the effect of electric-power line concentration at the p-n junction interface is suppressed due to the effects of the high-$K$ dielectric layer and an enhancement of breakdown voltage can be achieved. Numerical simulations demonstrate that GaN JBS with a specific on-resistance ($R_{\rm on, sp}$) of 2.07 m$\Omega\cdot$cm$^{2}$ and a BV of 4171 V which is 167% higher than the breakdown voltage of the common structure, resulting in a high figure-of-merit (FOM) of 8.6 GW/cm$^{2}$, and a low turn-on voltage of 0.6 V.
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Received: 24 June 2022
Revised: 19 August 2022
Accepted manuscript online: 02 September 2022
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PACS:
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73.61.Ey
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(III-V semiconductors)
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73.40.Kp
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(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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77.22.Ch
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(Permittivity (dielectric function))
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85.30.Mn
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(Junction breakdown and tunneling devices (including resonance tunneling devices))
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| Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61376078) and the Natural Science Foundation of Sichuan Province, China (Grant No. 2022NSFSC0515). |
Corresponding Authors:
Jiangfeng Du
E-mail: jfdu@uestc.edu.cn
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Cite this article:
Kuiyuan Tian(田魁元), Yong Liu(刘勇), Jiangfeng Du(杜江锋), and Qi Yu(于奇) Design optimization of high breakdown voltage vertical GaN junction barrier Schottky diode with high-K/low-K compound dielectric structure 2023 Chin. Phys. B 32 017306
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