Low-resistance ohmic contacts on InAlN/GaN heterostructures with MOCVD-regrown n+-InGaN and mask-free regrowth process

doi:10.1088/1674-1056/ac891b

Abstract This paper studied the low-resistance ohmic contacts on InAlN/GaN with metal-organic chemical vapor deposition (MOCVD) regrowth technique. The 150-nm regrown n⁺-InGaN exhibits a low sheet resistance of 31 Ω/□, resulting in an extremely low contact resistance of 0.102 Ω·mm between n⁺-InGaN and InAlN/GaN channels. Mask-free regrowth process was also used to significantly improve the sheet resistance of InAlN/GaN with MOCVD regrown ohmic contacts. Then, the diffusion mechanism between n⁺-InGaN and InAlN during regrowth process was investigated with electrical and structural characterizations, which could benefit the further process optimization.

Keywords: InAlN/GaN low-resistance ohmic contacts metal-organic chemical vapor deposition (MOCVD) n⁺-InGaN time of flight secondary ion mass spectrometry (TOF-SIMS)

Received: 24 April 2022
Revised: 25 July 2022
Accepted manuscript online: 12 August 2022

PACS:	73.40.Cg	(Contact resistance, contact potential)
	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	73.61.Ey	(III-V semiconductors)

Fund: Project supported by the Fundamental Research Funds for the National Key Research and Development Project of China (Grant No. 2020YFB1807403), the National Natural Science Foundation of China (Grant Nos. 62174125 and 62131014), the Fundamental Research Funds for the Central Universities (Grant Nos. QTZX22022 and YJS2213), and the Innovation Fund of Xidian University.

Corresponding Authors: Jiejie Zhu, Xiaohua Ma
E-mail: jjzhu@mail.xidian.edu.cn;xhma@xidian.edu.cn

Cite this article:

Jingshu Guo(郭静姝), Jiejie Zhu(祝杰杰), Siyu Liu(刘思雨), Jielong Liu(刘捷龙), Jiahao Xu(徐佳豪), Weiwei Chen(陈伟伟), Yuwei Zhou(周雨威), Xu Zhao(赵旭), Minhan Mi(宓珉瀚), Mei Yang(杨眉), Xiaohua Ma(马晓华), and Yue Hao(郝跃) Low-resistance ohmic contacts on InAlN/GaN heterostructures with MOCVD-regrown n⁺-InGaN and mask-free regrowth process 2023 Chin. Phys. B 32 037303

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Low-resistance ohmic contacts on InAlN/GaN heterostructures with MOCVD-regrown n+-InGaN and mask-free regrowth process

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Low-resistance ohmic contacts on InAlN/GaN heterostructures with MOCVD-regrown n⁺-InGaN and mask-free regrowth process