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Dramatic reduction in dark current of β-Ga2O3 ultraviolet photodectors via β-(Al0.25Ga0.75)2O3 surface passivation |
| Jian-Ying Yue(岳建英)1,2, Xue-Qiang Ji(季学强)1,2, Shan Li(李山)1,2, Xiao-Hui Qi(岐晓辉)1,2, Pei-Gang Li(李培刚)1,2,†, Zhen-Ping Wu(吴真平)1,2, and Wei-Hua Tang(唐为华)1,2,3,‡ |
1 Laboratory of Optoelectronics Materials and Devices, School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China;
2 State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China;
3 College of Electronic and Optical Engineering&College of Microelectronics, National and Local Joint Engineering Laboratory for RF Integration and Micro-Packaging Technologies, Nanjing University of Posts and Telecommunications, Nanjing 210046, China |
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Abstract Solar-blind ultraviolet photodetectors with metal-semiconductor-metal structure were fabricated based on β -(Al0.25Ga0.75)2O3/β -Ga2O3 film grown by metal-organic chemical vapor deposition. It was known that various surface states increase dark current and a large number of defects can hinder the transport of carriers, resulting in low switching ratio and low responsivity of the device. In this work, β -(Al0.25Ga0.75)2O3 films are used as surface passivation materials. Owning to its wide band gap, we obtain excellent light transmission and high lattice matching with β -Ga2O3. We explore the change and mechanism of the detection performance of the β -Ga2O3 detector after β -(Al0.25Ga0.75)2O3 surface passivation. It is found that under the illumination with 254 nm light at bias 5 V, the β -(Al0.25Ga0.75)2O3/β -Ga2O3 photodetectors show dark current of just 18 pA and high current on/off ratio of 2.16×105. The dark current is sharply reduced about 50 times after passivation of the β -Ga2O3 surface, and current on/off ratio increases by approximately 2 times. It is obvious that β -Ga2O3 detectors with β -(Al0.25Ga0.75)2O3 surface passivation can offer superior detector performance.
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Received: 11 June 2022
Revised: 15 August 2022
Accepted manuscript online: 18 August 2022
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PACS:
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67.30.hr
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(Films)
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71.20.Nr
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(Semiconductor compounds)
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85.60.Gz
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(Photodetectors (including infrared and CCD detectors))
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81.65.Rv
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(Passivation)
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| Fund: Project supported by China Postdoctoral Science Foundation (Grant No. 042600055) and Research on Frontiers of Materials Science, Beijing Municipal Science and Technology Commission (Grant No. Z181100004418006). |
Corresponding Authors:
Pei-Gang Li, Wei-Hua Tang
E-mail: pgli@bupt.edu.cn;whtang@njupt.edu.cn
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Cite this article:
Jian-Ying Yue(岳建英), Xue-Qiang Ji(季学强), Shan Li(李山), Xiao-Hui Qi(岐晓辉), Pei-Gang Li(李培刚), Zhen-Ping Wu(吴真平), and Wei-Hua Tang(唐为华) Dramatic reduction in dark current of β-Ga2O3 ultraviolet photodectors via β-(Al0.25Ga0.75)2O3 surface passivation 2023 Chin. Phys. B 32 016701
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