Analysis of high-temperature performance of 4H-SiC avalanche photodiodes in both linear and Geiger modes

doi:10.1088/1674-1056/ac9820

Abstract The high-temperature performance of 4H-SiC ultraviolet avalanche photodiodes (APDs) in both linear and Geiger modes is extensively investigated. During the temperature-dependent measurements, a fixed bias voltage is adopted for the device samples, which is much more practical and important for high-temperature applications. The results show that the fabricated 4H-SiC APDs are very stable and reliable at high temperatures. As the temperature increases from room temperature to 425 K, the dark current at 95% of the breakdown voltage increases slightly and remains lower than 40 pA. In Geiger mode, our 4H-SiC APDs can be self-quenched in a passive-quenching circuit, which is expected for high-speed detection systems. Moreover, an interesting phenomenon is observed for the first time: the single-photon detection efficiency shows a non-monotonic variation as a function of temperature. The physical mechanism of the variation in high-temperature performance is further analyzed. The results in this work can provide a fundamental reference for researchers in the field of 4H-SiC APD ultraviolet detectors.

Keywords: 4H-SiC avalanche photodiode ultraviolet detector high temperature

Received: 21 June 2022
Revised: 01 October 2022
Accepted manuscript online: 07 October 2022

PACS:	85.60.Gz	(Photodetectors (including infrared and CCD detectors))
	85.60.Dw	(Photodiodes; phototransistors; photoresistors)
	85.60.Bt	(Optoelectronic device characterization, design, and modeling)
	95.85.Mt	(Ultraviolet (10-300 nm))

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61974134) and Hebei Province Outstanding Youth Fund (Grant No. F2021516001).

Corresponding Authors: Yuan-Jie Lv, Zhi-Hong Feng
E-mail: yuanjielv@163.com;ga917vv@163.com

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Xing-Ye Zhou(周幸叶), Yuan-Jie Lv(吕元杰), Hong-Yu Guo(郭红雨), Guo-Dong Gu(顾国栋), Yuan-Gang Wang(王元刚), Shi-Xiong Liang(梁士雄), Ai-Min Bu(卜爱民), and Zhi-Hong Feng(冯志红) Analysis of high-temperature performance of 4H-SiC avalanche photodiodes in both linear and Geiger modes 2023 Chin. Phys. B 32 038502

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Analysis of high-temperature performance of 4H-SiC avalanche photodiodes in both linear and Geiger modes

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