|
|
|
Achieving highly-efficient H2S gas sensor by flower-like SnO2-SnO/porous GaN heterojunction |
| Zeng Liu(刘增)1,2,†, Ling Du(都灵)3, Shao-Hui Zhang(张少辉)4,‡, Ang Bian(边昂)5, Jun-Peng Fang(方君鹏)6, Chen-Yang Xing(邢晨阳)7, Shan Li(李山)8, Jin-Cheng Tang(汤谨诚)8, Yu-Feng Guo(郭宇锋)1,2, and Wei-Hua Tang(唐为华)1,2,§ |
1 College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China;
2 National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies, Nanjing University of Posts and Telecommunications, Nanjing 210023, China;
3 School of Electronic and Information Engineering, Jinling Institute of Technology, Nanjing 211169, China;
4 Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China;
5 Key Laboratory of Luminescence and Optical Information of Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China;
6 School of Integrated Circuits, Tsinghua University, Beijing 100084, China;
7 Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China;
8 State Key Laboratory of Information Photonics and Optical Communications, School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China |
|
|
|
|
Abstract A flower-like SnO2-SnO/porous GaN (FSS/PGaN) heterojunction was fabricated for the first time via a facile spraying process, and the whole process also involved hydrothermal preparation of FSS and electrochemical wet etching of GaN, and SnO2-SnO composites with p-n junctions were loaded onto PGaN surface directly applied to H2S sensor. Meanwhile, the excellent transport capability of heterojunction between FSS and PGaN facilitates electron transfer, that is, a response time as short as 65 s and a release time up to 27 s can be achieved merely at 150 ℃ under 50 ppm H2S concentration, which has laid a reasonable theoretical and experimental foundation for the subsequent PGaN-based heterojunction gas sensor. The lowering working temperature and high sensitivity (23.5 at 200 ppm H2S) are attributed to the structure of PGaN itself and the heterojunction between SnO2-SnO and PGaN. In addition, the as-obtained sensor showed ultra-high test stability. The simple design strategy of FSS/PGaN-based H2S sensor highlights its potential in various applications.
|
Received: 04 February 2022
Revised: 19 April 2022
Accepted manuscript online: 22 April 2022
|
|
PACS:
|
07.07.Df
|
(Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing)
|
|
| Fund: Project supported by the Natural Science Research Start-up Foundation of Recruiting Talents of Nanjing University of Posts and Telecommunications (Grant Nos. XK1060921115 and XK1060921002), Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 62204125), the National Key R&D Program of China (Grant No. 2022YFB3605404), and the Natural Science Foundation of Guangdong Province, China (Grant No. 2019A1515010790). |
Corresponding Authors:
Zeng Liu, Shao-Hui Zhang, Wei-Hua Tang
E-mail: zengliu@njupt.edu.cn;shzhang2016@sinano.ac.cn;whtang@njupt.edu.cn
|
Cite this article:
Zeng Liu(刘增), Ling Du(都灵), Shao-Hui Zhang(张少辉), Ang Bian(边昂), Jun-Peng Fang(方君鹏), Chen-Yang Xing(邢晨阳), Shan Li(李山), Jin-Cheng Tang(汤谨诚), Yu-Feng Guo(郭宇锋), and Wei-Hua Tang(唐为华) Achieving highly-efficient H2S gas sensor by flower-like SnO2-SnO/porous GaN heterojunction 2023 Chin. Phys. B 32 020701
|
[1] Pandey S K, Kim K H and Tang K T 2012 TrAC Trends Anal. Chem. 32 87
[2] Chen H, Rim Y S, Wang I C, Li C, Zhu B, Sun M, Goorsky M S, He X and Yang Y 2017 ACS Nano. 11 4710
[3] Srivastava S K, Magudapathy P, Gangopadhyay P, Amirthapandian S, Bera S and Das A 2019 Thin Solid Films 681 86
[4] Kulkarni M R, John R A, Tiwari N, Nirmal A, Ng S E, Nguyen A C and Mathews N 2019 Small 15 1901457
[5] Erme K and Jõgi I 2019 Environ. Sci. Technol. 53 5266
[6] Bachhav M, Pawar G, Vurpillot F, Danoix R, Danoix F, Hannoyer B, Dong Y and Marquis E 2019 J. Phys. Chem. C 123 1313
[7] Tiwari N, Nirmal A, Kulkarni M R, John R A and Mathews N 2020 Inorg. Chem. Front. 7 1822
[8] Prati E, Michielis M D, Belli M, Cocco S, Fanciulli M, Patil D K, Ruoff M, Kern D P, Wharam D A, Verduijn J, Tettamanzi G C, Rogge S, Roche B, Wacquez R, Jehl X, Vinet M and Sanquer M 2012 Nanotechnology 23 215204
[9] Cho S Y, Yoo H W, Kim J Y, Jung W B, Jin M L, Kim J S, Jeon H J and Jung H T 2016 Nano Lett. 16 4508
[10] Youn Y, Lee M, Kim D, Jeong J K, Kang Y and Han S 2019 Chem. Mater. 31 5475
[11] Boyal E, Baran V, Asar T, Özçelik S and Kasap M 2017 J. Alloys Compd. 692 119e123
[12] Ma N, Suematsu K, Yuasa M, Kida T and Shimanoe K 2015 ACS Appl. Mater. Interfaces 7 5863
[13] Motsoeneng R G, Kortidis I, Ray S S and Motaung D E 2019 ACS Omega 4 3696
[14] Shanmugasundaram A, Basak P, Satyanarayan L and Manoram S V 2013 Sens. Actuators B 185 265
[15] Song F, Su H L, Chen J J, Moon W J, Lau W M and Zhang D 2012 J. Mater. Chem. 22 1121
[16] Wang Y, Liu C Y, Wang Z, Song Z W, Han N and Chen Y F 2019 Sens. Actuators B 278 28
[17] Suman P H, Felix A A, Tuller H L, Varela J A and Orlandi M O 2015 Sens. Actuators B 208 122
[18] Ozdemir S and Gole J L 2010 Sens. Actuators B 151 274
[19] Dheyab A B, Alwan A M and Zayer M Q 2019 Plasmonics 14 501
[20] Bilenko D I, Belobrovaja O Y, Coldobanova O Y, Jarkova E A, Khasina E I, Polyanskaya V P, Melnikova T E, Mysenko I B, Smirnov V V and Filippova G O 2000 Sens. Actuators A 79 147
[21] Baratto C, Comini E, Faglia G, Sberveglieri G, Francia G D, Filippo F D, Ferrara V L, Quercia L and Lancellotti L 2000 Sens. Actuators B 65 257
[22] Pancheri L, Oton C J, Gaburro Z and Pavesi L 2003 Sens. Actuators B 89 237
[23] Xu K C, Lu Y Y and Takei K 2019 Adv. Mater. Technol. 4 1800628
[24] Xu K C, Lu Y Y, Honda S, Arie T, Akita S and Takei K 2019 J. Mater. Chem. C 7 9609
[25] Zhang M X, Zhao C H, Gong H M, Niu G Q and Wang F 2019 ACS Appl. Mater. Interfaces 11 33124
[26] Zhang M R, Jiang Q M, Wang Z G, Zhang S H, Hou F and Pan G B 2017 Sens. Actuators B 253 652
[27] Zhang M R, Hou F, Wang Z G, Zhang S H and Pan G B 2017 Appl. Surf. Sci. 410 332
[28] Zhang M R, Qin S J, Peng H D and Pan G B 2016 Mater. Lett. 182 363
[29] Zhong A H, Sasaki T and Hane K 2014 Sens. Actuators A 209 52
[30] Luo X J, Zheng X J, Wang D, Zhang Y, Cheng H B, Wang X Y, Zhuang H J and Lou Y L 2014 Sens. Actuators B 202 1010
[31] Abdullah Q N, Yam F K, Hassan J J, Chin C W, Hassan Z and Bououdina M 2013 Int. J. Hydrogen Energy 38 14085
[32] Wang C, Huang H, Zhang M R, Song W X, Zhang L, Xi R, Wang L J and Pan G B 2019 Nanoscale Adv. 1 1232
[33] Wang C, Wang L J, Zhang L, Xi R, Huang H, Zhang S H and Pan G B 2019 J. Alloys Compd. 790 363
[34] Wang C, Zhang M R, Song W X, Peng H D, Huang H, Wang Z G, Xi R and Pan G B 2018 Chem. Phys. Lett. 710 54
[35] Shankar P and Rayappan J B B 2017 J. Mater. Chem. C 5 10869
[36] Wang Y, Qu F, Liu J, Wang Y, Zhou J and Ruan S 2015 Sens. Actuators B 209 515
[37] Kheel H, Sun G J, Lee J K, Lee S, Dwivedi R P and Lee C 2016 Ceram. Int. 42 18597
[38] Jiang P, Zhang H, Chen C, Liang J, Luo Y, Zhang M and Cai M 2017 Cryst. Eng. Comm. 19 5742
[39] Song Z, Wei Z, Wang B, Luo Z, Xu S, Zhang W, Yu H, Li M, Huang Z, Zang J, Yi F and Liu H 2016 Chem. Mater. 28 1205
[40] Guo W, Mei L, Wen J and Ma J 2016 RSC Adv. 6 15048
[41] Hong P P, Manh H C, Toan N V, Duy N V, Duc H N and Hieu N V 2020 Sens. Actuators A 303 111722
[42] Ji H, Zeng W and Li Y 2019 Nanoscale 11 22664
[43] Wang X, Wang Y, Tian F, Liang H, Wang K, Zhao X, Lu Z, Jiang K, Yang L and Lou X 2015 J. Phys. Chem. C 119 15963
[44] Yousefi S M, Rahbarpour S and Ghafoorifard H 2019 Mater. Chem. Phys. 227 148
[45] Selvaraj K, Kumar S and Lakshmanan R 2014 Ain. Shams Eng. J. 5 885
[46] Yang S, Wang Z, Zou Y, Luo X, Pan X, Zhang X, Hu Y, Chen K, Huang Z, Wang S, Zhang K and Gu H 2017 Sens. Actuators B 248 160
[47] Liu Y, Jiao Y, Zhang Z L, Qu F Y, Umar A and Wu X 2014 ACS Appl. Mater. Interfaces 6 2174
[48] Zappa D, Galstyan V, Kaur N, Arachchige H M M, Sisman O and Comini E 2018 Anal. Chim. Acta 1039 1 |
| No Suggested Reading articles found! |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
Altmetric
|
|
blogs
Facebook pages
Wikipedia page
Google+ users
|
Online attention
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
View more on Altmetrics
|
|
|
