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A 4×4 metal-semiconductor-metal rectangular deep-ultraviolet detector array of Ga2O3 photoconductor with high photo response |
| Zeng Liu(刘增)1,2,†, Yu-Song Zhi(支钰崧)3, Mao-Lin Zhang(张茂林)1,2, Li-Li Yang(杨莉莉)1,2, Shan Li(李山)4, Zu-Yong Yan(晏祖勇)4, Shao-Hui Zhang(张少辉)5, Dao-You Guo(郭道友)6, Pei-Gang Li(李培刚)4, Yu-Feng Guo(郭宇锋)1,2, and Wei-Hua Tang(唐为华)1,2,‡ |
1 College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China;
2 National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies, Nanjing University of Posts and Telecommunications, Nanjing 210023, China;
3 China Academy of Launch Vehicle Technology, Beijing 100076, China;
4 School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China;
5 Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China;
6 Center for Optoelectronics Materials and Devices, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, China |
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Abstract A 4$\times $4 beta-phase gallium oxide ($\beta $-Ga$_{2}$O$_{3}$) deep-ultraviolet (DUV) rectangular 10-fingers interdigital metal-semiconductor-metal (MSM) photodetector array of high photo responsivity is introduced. The Ga$_{2}$O$_{3}$ thin film is prepared through the metalorganic chemical vapor deposition technique, then used to construct the photodetector array via photolithography, lift-off, and ion beam sputtering methods. The one photodetector cell shows dark current of 1.94 pA, photo-to-dark current ratio of 6$\times $10$^{7}$, photo responsivity of 634.15 A$\cdot$W$^{-1}$, specific detectivity of 5.93$\times $10$^{11}$ cm$\cdot$Hz$^{1/2}\cdot$W$^{-1}$ (Jones), external quantum efficiency of 310000%, and linear dynamic region of 108.94 dB, indicating high performances for DUV photo detection. Furthermore, the 16-cell photodetector array displays uniform performances with decent deviation of 19.6% for photo responsivity.
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Received: 28 October 2021
Revised: 28 February 2022
Accepted manuscript online: 02 March 2022
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PACS:
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85.60.Gz
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(Photodetectors (including infrared and CCD detectors))
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29.40.Wk
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(Solid-state detectors)
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95.55.Aq
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(Charge-coupled devices, image detectors, and IR detector arrays)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61774019) and Natural Science Research Start-up Foundation of Recruiting Talents of Nanjing University of Posts and Telecommunications (Grant Nos. XK1060921115 and XK1060921002). |
Corresponding Authors:
Zeng Liu, Wei-Hua Tang
E-mail: zengliu@njupt.edu.cn;whtang@njupt.edu.cn
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Cite this article:
Zeng Liu(刘增), Yu-Song Zhi(支钰崧), Mao-Lin Zhang(张茂林), Li-Li Yang(杨莉莉), Shan Li(李山), Zu-Yong Yan(晏祖勇), Shao-Hui Zhang(张少辉), Dao-You Guo(郭道友), Pei-Gang Li(李培刚), Yu-Feng Guo(郭宇锋), and Wei-Hua Tang(唐为华) A 4×4 metal-semiconductor-metal rectangular deep-ultraviolet detector array of Ga2O3 photoconductor with high photo response 2022 Chin. Phys. B 31 088503
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