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Abstract A type II p-n heterojunction could improve the photodetection performance of a photodetector due to the excellent ability of carrier separation. N-type AgIn5Se8 (AIS) exhibits a large optical absorption coefficient, high optical conductivity and a suitable bandgap, and shows potential application in broadband photodetection. Even though our previous study on AgIn5Se8/FePSe3 obtained a good response speed, it still gave low responsivity due to the poor quality of the p-type FePSe3 thin film. Se, with a direct bandgap (around 1.7 eV), p-type conductivity, high electron mobility and high carrier density, is likely to form a low-dimensional structure, which leads to an increase in the effective contact area of the heterojunction and further improves the photodetector performance. In this work, continuous and dense t-Se thin film was prepared by electrochemical deposition. The self-powered AgIn5Se8/t-Se heterojunction photodetector exhibited a broadband detection range from 365 nm to 1200 nm. The responsivity and detectivity of the heterojunction photodetector were 32 μ A/W and 1.8× 109 Jones, respectively, which are around 9 and 4 times higher than those of the AgIn5Se8/FePSe3 heterojunction photodetector. The main reason for this is the good quality of the t-Se thin film and the formation of the low-dimensional t-Se nanoribbons, which optimized the transport pathway of carriers. The results indicate that the AgIn5Se8/t-Se heterojunction is an excellent candidate for broadband and self-powered photoelectronic devices.
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Received: 14 June 2023
Revised: 25 July 2023
Accepted manuscript online: 01 August 2023
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PACS:
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85.30.-z
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(Semiconductor devices)
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85.60.Gz
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(Photodetectors (including infrared and CCD detectors))
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73.61.Le
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(Other inorganic semiconductors)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant No. 51803168), the Key Research and Development Program of Shaanxi Province (Grant No. 2022GY-356), and the Youth Innovation Team of Shaanxi Universities. |
Corresponding Authors:
Peng Hu
E-mail: hupeng@nwu.edu.cn
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Cite this article:
Kang Li(李康), Lei Xu(许磊), Qidong Lu(陆启东), and Peng Hu(胡鹏) A fast-response self-powered UV-Vis-NIR broadband photodetector based on a AgIn5Se8/t-Se heterojunction 2023 Chin. Phys. B 32 118503
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