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Special Issue:
SPECIAL TOPIC—Post-Moore era: Materials and device physics
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| SPECIAL TOPIC—Post-Moore era: Materials and device physics |
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β-Ga2O3 junction barrier Schottky diode with NiO p-well floating field rings |
| Qiming He(何启鸣)1,2, Weibing Hao(郝伟兵)2, Qiuyan Li(李秋艳)2, Zhao Han(韩照)2, Song He(贺松)2, Qi Liu(刘琦)2, Xuanze Zhou(周选择)2, Guangwei Xu(徐光伟)2, and Shibing Long(龙世兵)2,† |
1 School of Electronic and Information Engineering, Beihang University, Beijing 100191, China;
2 School of Microelectronics, University of Science and Technology, Hefei 230026, China |
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Abstract Recently, β-Ga2O3, an ultra-wide bandgap semiconductor, has shown great potential to be used in power devices blessed with its unique material properties. For instance, the measured average critical field of the vertical Schottky barrier diode (SBD) based on β-Ga2O3 has reached 5.45 MV/cm, and no device in any material has measured a greater before. However, the high electric field of the β-Ga2O3 SBD makes it challenging to manage the electric field distribution and leakage current. Here, we show β-Ga2O3 junction barrier Schottky diode with NiO p-well floating field rings (FFRs). For the central anode, we filled a circular trench array with NiO to reduce the surface field under the Schottky contact between them to reduce the leakage current of the device. For the anode edge, experimental results have demonstrated that the produced NiO/β-Ga2O3 heterojunction FFRs enable the spreading of the depletion region, thereby mitigating the crowding effect of electric fields at the anode edge. Additionally, simulation results indicated that the p-NiO field plate structure designed at the edges of the rings and central anode can further reduce the electric field. This work verified the feasibility of the heterojunction FFRs in β-Ga2O3 devices based on the experimental findings and provided ideas for managing the electric field of β-Ga2O3 SBD.
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Received: 22 March 2023
Revised: 20 April 2023
Accepted manuscript online: 22 April 2023
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PACS:
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85.30.-z
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(Semiconductor devices)
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85.30.Mn
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(Junction breakdown and tunneling devices (including resonance tunneling devices))
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85.30.Kk
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(Junction diodes)
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84.30.Jc
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(Power electronics; power supply circuits)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant Nos.61925110, U20A20207, 62004184, 62004186, and 62234007), the Key-Area Research and Development Program of Guangdong Province (Grant No.2020B010174002), the funding support from University of Science and Technology of China (USTC) (Grant Nos.YD2100002009 and YD2100002010), the Fundamental Research Plan (Grant No.JCKY2020110B010), Collaborative Innovation Program of Hefei Science Center, Chinese Academy of Sciences (Grant No.2022HSC-CIP024), and the Opening Project of and the Key Laboratory of Nanodevices and Applications in Suzhou Institute of Nano-Tech and Nano-Bionics of CAS. This work was partially carried out at the Center for Micro and Nanoscale Research and Fabrication of USTC. The author would like to express gratitude to those who assisted and encouraged during research work, with special appreciation to Prof. Xiaojun Wu and Prof. Liu Ming. |
Corresponding Authors:
Shibing Long
E-mail: shibinglong@ustc.edu.cn
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Cite this article:
Qiming He(何启鸣), Weibing Hao(郝伟兵), Qiuyan Li(李秋艳), Zhao Han(韩照), Song He(贺松),Qi Liu(刘琦), Xuanze Zhou(周选择), Guangwei Xu(徐光伟), and Shibing Long(龙世兵) β-Ga2O3 junction barrier Schottky diode with NiO p-well floating field rings 2023 Chin. Phys. B 32 128507
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