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Chin. Phys. B, 2023, Vol. 32(1): 018506    DOI: 10.1088/1674-1056/ac9fc4

Dynamic modeling of total ionizing dose-induced threshold voltage shifts in MOS devices

Guangbao Lu(陆广宝)1,2,†, Jun Liu(刘俊)1,2,†, Chuanguo Zhang(张传国)1, Yang Gao(高扬)1,2, and Yonggang Li(李永钢)1,2,‡
1 Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China;
2 University of Science and Technology of China, Hefei 230026, China
Abstract  The total ionizing dose (TID) effect is a key cause for the degradation/failure of semiconductor device performance under energetic-particle irradiation. We developed a dynamic model of mobile particles and defects by solving the rate equations and Poisson's equation simultaneously, to understand threshold voltage shifts induced by TID in silicon-based metal-oxide-semiconductor (MOS) devices. The calculated charged defect distribution and corresponding electric field under different TIDs are consistent with experiments. TID changes the electric field at the Si/SiO2 interface by inducing the accumulation of oxide charged defects nearby, thus shifting the threshold voltage accordingly. With increasing TID, the oxide charged defects increase to saturation, and the electric field increases following the universal 2/3 power law. Through analyzing the influence of TID on the interfacial electric field by different factors, we recommend that the radiation-hardened performance of devices can be improved by choosing a thin oxide layer with high permittivity and under high gate voltages.
Keywords:  dynamic modeling      total ionizing dose      threshold voltage shifts      radiation-hardening  
Received:  26 August 2022      Revised:  31 October 2022      Accepted manuscript online:  03 November 2022
PACS:  85.30.-z (Semiconductor devices)  
  85.30.De (Semiconductor-device characterization, design, and modeling)  
  24.10.-i (Nuclear reaction models and methods)  
  42.88.+h (Environmental and radiation effects on optical elements, devices, and systems)  
Fund: Project supported by the Science Challenge Project of China (Grant No. TZ2018004), the National Natural Science Foundation of China (Grant Nos. 11975018 and 11775254), the National MCF Energy R&D Program of China (Grant No. 2018YEF0308100), and the outstanding member of Youth Innovation Promotion Association CAS (Grant No. Y202087).
Corresponding Authors:  Yonggang Li     E-mail:

Cite this article: 

Guangbao Lu(陆广宝), Jun Liu(刘俊), Chuanguo Zhang(张传国), Yang Gao(高扬), and Yonggang Li(李永钢) Dynamic modeling of total ionizing dose-induced threshold voltage shifts in MOS devices 2023 Chin. Phys. B 32 018506

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