| INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
Prev
Next
|
|
|
Si-Ge based vertical tunnel field-effect transistor of junction-less structure with improved sensitivity using dielectric modulation for biosensing applications |
| Lucky Agarwal1, Varun Mishra2, Ravi Prakash Dwivedi1,†, Vishal Goyal3, and Shweta Tripathi4 |
1 School of Electronics Engineering, Vellore Institute of Technology, Chennai 600127, India;
2 Department of Electronics and Communication Engineering Graphic Era(deemed to be University), Dehradun, Uttarakhand 248002, India;
3 Department of Electronics and Communication Engineering, GLA University, Mathura 281406, India;
4 Department of Electronics and Communication Engineering, Motilal Nehru National Institute of Technology, Allahabad 211004, India |
|
|
|
|
Abstract A dielectric modulation strategy for gate oxide material that enhances the sensing performance of biosensors in junction-less vertical tunnel field effect transistors (TFETs) is reported. The junction-less technique, in which metals with specific work functions are deposited on the source region to modulate the channel conductivity, is used to provide the necessary doping for the proper functioning of the device. TCAD simulation studies of the proposed structure and junction structure have been compared, and showed an enhanced rectification of 104 times. The proposed structure is designed to have a nanocavity of length 10 nm on the left- and right-hand sides of the fixed gate dielectric, which improves the biosensor capture area, and hence the sensitivity. By considering neutral and charged biomolecules with different dielectric constants, TCAD simulation studies were compared for their sensitivities. The off-state current IOFF can be used as a suitable sensing parameter because it has been observed that the proposed sensor exhibits a significant variation in drain current. Additionally, it has been investigated how positively and negatively charged biomolecules affect the drain current and threshold voltage. To explore the device performance when the nanogaps are fully filled, half filled and unevenly filled, extensive TCAD simulations have been run. The proposed TFET structure is further benchmarked to other structures to show its better sensing capabilities.
|
Received: 09 November 2022
Revised: 22 March 2023
Accepted manuscript online: 28 March 2023
|
|
PACS:
|
87.14.-g
|
(Biomolecules: types)
|
| |
77.22.Ch
|
(Permittivity (dielectric function))
|
| |
85.30.-z
|
(Semiconductor devices)
|
| |
61.82.Fk
|
(Semiconductors)
|
|
| Fund: Authors greatly acknowledge MNNIT Allahabad for accessing the software facility. |
Corresponding Authors:
Ravi Prakash Dwivedi
E-mail: raviprakash.dwivedi@vit.ac.in
|
Cite this article:
Lucky Agarwal, Varun Mishra, Ravi Prakash Dwivedi, Vishal Goyal, and Shweta Tripathi Si-Ge based vertical tunnel field-effect transistor of junction-less structure with improved sensitivity using dielectric modulation for biosensing applications 2023 Chin. Phys. B 32 128701
|
[1] Barbaro M, Bonfiglio A and Raffo L 2006 IEEE Trans. Electron. Devices 53 158
[2] Kim C H, Jung C, Park H G and Choi Y K 2008 Biochip J. 2 127
[3] Chanda M, Das R, Kundu A and Sarkar C K 2017 Superlattices Microstruct. 104 451
[4] Narang R, Saxena M, Gupta R S and Gupta M 2012 IEEE Electron. Device Lett. 33 268
[5] Choi J M, Han J W, Choi S J and Choi Y K 2010 IEEE Trans. Electron. Devices 57 3477
[6] Jayaswal N, Raman A, Kumar N, Singh S 2019 Superlattices Microstruct. 125 256
[7] Singh S, Khosla M and Wadhwa G 2021 Appl. Phys. A 127 16
[8] Tsukada K, Kariya M, Yamaguchi T, Kiwa T, Yamada H, Maehara T, Yamamoto T, Kunitsugu S 2010 Jpn. J. Appl. Phys. 49 024206
[9] Wei W, Lü W, Han Y, Zhang C and Chen D 2023 Chin. Phys. B 32 097301
[10] Gnudi A, Reggiani S, Gnani E and Baccarani G 2012 IEEE Electron Device Lett. 33 336
[11] Li W and Woo J 2020 IEEE Trans. Electron Device 67 1480
[12] Ko E, Lee H, Park J and Shin C 2016 IEEE Trans. Electron Devices 63 5030
[13] Wang B, Hu S and Feng Y 2020 Chin. Phys. B 29 107401
[14] Nigam K, Kondekar P and Sharma D 2016 Micro Nano Lett. 11 319
[15] Choi K M and Choi W Y 2013 IEEE Electron Device Lett. 34 942
[16] Zhang W H, Li Z C, Guan Y H and Zhang Y F 2017 Chin. Phys. B 26 078502
[17] Shan C, Wang Y and Bao M T 2016 IEEE Trans. Electron. Devices 63 2275
[18] Busse S, Scheumann V, Menges B and Mittler S 2002 Biosensors Bioelectron. 17 710
[19] Bhattacharyya A, Chanda M and De D 2019 IEEE Trans. Electron. Devices 66 3988
[20] Bibi F, Villain M, Guillaume C, Sorli B and Gontard N 2016 Sensors 16 1232
[21] Choi W Y, Park B, Lee J D and Liu T K 2007 IEEE Trans. Electron. Device Lett. 28 743
[22] Bhuwalka K K, Sedlmaier S, Ludsteck A K, Toksdorf C and Schulzeand J, Eisele I 2004 IEEE Trans. Electron. Device 51 279
[23] Wirths S, Tiedemann A T, rellenkamp S, Buca D, Zhao Q T and Mantl S 2015 in Proc. Int. Electron. Devices Meeting 608
[24] Huang Q, Huang R, Wu C, Zhu H, Chen C, Wang J, Guo L, Wang R, Ye L and Wang Y 2014 in Proc. IEEE Int. Electron. Devices Meeting 13
[25] Zhou G, Li R, Vasen T, Qi M, Chae S, Lu Y, Zhang Q, Zhu H, Kuo J M, Kosel T and Wistey M 2012 in Proc. Int. Electron. Devices Meeting 32
[26] Devi W V and Bhowmick B 2019 Micro Nano Lett. 14 69
[27] Sarkar D and Banerjee K 2012 Appl. Phys. Lett. 100 143108
[28] Im H, Huang X J, Gu B and Choi Y K 2007 Nat. Nanotechnol. 2 430
[29] Kanungo S, Chattopadhyay S, Gupta P S and Rahaman H 2015 IEEE Trans. Electron. Devices 62 994
[30] Narang R, Saxena M, Gupta R S and Gupta M 2015 IEEE Trans. Nanotechnol. 14 427
[31] Mishra V, Verma Y K and Gupta S K 2019 Journal of Nanoelectronics and Optoelectronics 14 161
[32] Wangkheirakpam V D, Bhowmick B and Pukhrambam P D 2020 IEEE Trans. Nanotechnology 19 156
[33] Kanungo S, Chattopadhyay S, Gupta P S, Sinha K and Rahaman H 2016 IEEE Trans. Electron. Devices 63 2589
[34] Verma M, Tirkey S, Yadav S, Sharma D and Yadav D S 2017 IEEE Trans. Electron. Devices 64 3841
[35] Goswami R and Bhowmick B 2019 IEEE Sens. J. 9 9600 |
| No Suggested Reading articles found! |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
Altmetric
|
|
blogs
Facebook pages
Wikipedia page
Google+ users
|
Online attention
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
View more on Altmetrics
|
|
|
