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Special Issue:
SPECIAL TOPIC—Post-Moore era: Materials and device physics
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| TOPICAL REVIEW—Post-Moore era: Materials and device physics |
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Recent progress on two-dimensional ferroelectrics: Material systems and device applications |
| Zhiwei Fan(范芷薇)1,†, Jingyuan Qu(渠靖媛)1,†, Tao Wang(王涛)1, Yan Wen(温滟)1, Ziwen An(安子文)1, Qitao Jiang(姜琦涛)1, Wuhong Xue(薛武红)1,‡, Peng Zhou(周鹏)2,§, and Xiaohong Xu(许小红)1,¶ |
1 Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education and School of Chemistry and Materials Science, Shanxi Normal University, Taiyuan 030031, China;
2 State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai 200433, China |
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Abstract Ferroelectrics are a type of material with a polar structure and their polarization direction can be inverted reversibly by applying an electric field. They have attracted tremendous attention for their extensive applications in non-volatile memory, sensors and neuromorphic computing. However, conventional ferroelectric materials face insulating and interfacial issues in the commercialization process. In contrast, two-dimensional (2D) ferroelectric materials usually have excellent semiconductor performance, clean van der Waals interfaces and robust ferroelectric order in atom-thick layers, and hold greater promise for constructing multifunctional ferroelectric optoelectronic devices and nondestructive ultra-high-density memory. Recently, 2D ferroelectrics have obtained impressive breakthroughs, showing overwhelming superiority. Herein, firstly, the progress of experimental research on 2D ferroelectric materials is reviewed. Then, the preparation of 2D ferroelectric devices and their applications are discussed. Finally, the future development trend of 2D ferroelectrics is looked at.
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Received: 31 July 2023
Revised: 20 October 2023
Accepted manuscript online: 02 November 2023
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PACS:
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85.30.-z
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(Semiconductor devices)
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77.80.-e
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(Ferroelectricity and antiferroelectricity)
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28.52.Fa
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(Materials)
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| Fund: Project supported by the National Key Research and Development Program of China (Grant No.2022YFB3505301), the National Natural Science Foundation of China (Grant Nos.12241403 and12174237), and the Graduate Education Innovation Project in Shanxi Province (Grant No.2021Y484). |
Corresponding Authors:
Wuhong Xue, Peng Zhou, Xiaohong Xu
E-mail: xuewuhong@sxnu.edu.cn;pengzhou@fudan.edu.cn;xuxh@sxnu.edu.cn
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Cite this article:
Zhiwei Fan(范芷薇), Jingyuan Qu(渠靖媛), Tao Wang(王涛), Yan Wen(温滟), Ziwen An(安子文), Qitao Jiang(姜琦涛), Wuhong Xue(薛武红), Peng Zhou(周鹏), and Xiaohong Xu(许小红) Recent progress on two-dimensional ferroelectrics: Material systems and device applications 2023 Chin. Phys. B 32 128508
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