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Chin. Phys. B, 2023, Vol. 32(10): 108504    DOI: 10.1088/1674-1056/acc44d
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Investigation of Ga2O3/diamond heterostructure solar-blind avalanche photodiode via TCAD simulation

Dun-Zhou Xu(许敦洲)1,2, Peng Jin(金鹏)1,2,†, Peng-Fei Xu(徐鹏飞)1,2, Meng-Yang Feng(冯梦阳)1,2,3, Ju Wu(吴巨)1,2, and Zhan-Guo Wang(王占国)1,2
1 Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
3 School of Physics and Technology, Wuhan University, Wuhan 430072, China
Abstract  A Ga2O3/diamond separate absorption and multiplication avalanche photodiode (SAM-APD) with mesa structure has been proposed and simulated. The simulation is based on an optimized Ga2O3/diamond heterostructure TCAD physical model, which is revised by repeated comparison with the experimental data from the literature. Since both Ga2O3 and diamond are ultra-wide bandgap semiconductor materials, the Ga2O3/diamond SAM-APD shows good solar-blind detection ability, and the corresponding cutoff wavelength is about 263 nm. The doping distribution and the electric field distribution of the SAM-APD are discussed, and the simulation results show that the gain of the designed device can reach 5×104 and the peak responsivity can reach a value as high as 78 A/W.
Keywords:  Ga2O3      diamond      separate absorption and multiplication avalanche photodiode (SAM-APD)      solar-blind detector  
Received:  07 November 2022      Revised:  07 February 2023      Accepted manuscript online:  15 March 2023
PACS:  85.60.-q (Optoelectronic devices)  
  85.30.-z (Semiconductor devices)  
  85.30.De (Semiconductor-device characterization, design, and modeling)  
  85.30.Mn (Junction breakdown and tunneling devices (including resonance tunneling devices))  
Fund: Project supported by the National Key Research and Development Program of China (Grant No. 2022YFB3608602), the Beijing Municipal Science and Technology Commission (Grant No. Z181100004418009), and the National Natural Science Foundation of China (Grant No. 61927806).
Corresponding Authors:  Peng Jin     E-mail:  pengjin@semi.ac.cn

Cite this article: 

Dun-Zhou Xu(许敦洲), Peng Jin(金鹏), Peng-Fei Xu(徐鹏飞), Meng-Yang Feng(冯梦阳), Ju Wu(吴巨), and Zhan-Guo Wang(王占国) Investigation of Ga2O3/diamond heterostructure solar-blind avalanche photodiode via TCAD simulation 2023 Chin. Phys. B 32 108504

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