Interface effect on superlattice quality and optical properties of InAs/GaSb type-II superlattices grown by molecular beam epitaxy

doi:10.1088/1674-1056/ac8729

Abstract We systematically investigate the influence of InSb interface (IF) engineering on the crystal quality and optical properties of strain-balanced InAs/GaSb type-II superlattices (T2SLs). The type-II superlattice structure is 120 periods InAs (8 ML)/GaSb (6 ML) with different thicknesses of InSb interface grown by molecular beam epitaxy (MBE). The high-resolution x-ray diffraction (XRD) curves display sharp satellite peaks, and the narrow full width at half maximum (FWHM) of the 0th is only 30-39 arcsec. From high-resolution cross-sectional transmission electron microscopy (HRTEM) characterization, the InSb heterointerfaces and the clear spatial separation between the InAs and GaSb layers can be more intuitively distinguished. As the InSb interface thickness increases, the compressive strain increases, and the surface "bright spots" appear to be more apparent from the atomic force microscopy (AFM) results. Also, photoluminescence (PL) measurements verify that, with the increase in the strain, the bandgap of the superlattice narrows. By optimizing the InSb interface, a high-quality crystal with a well-defined surface and interface is obtained with a PL wavelength of 4.78 μ, which can be used for mid-wave infrared (MWIR) detection.

Keywords: InAs/GaSb type-II superlattice molecular beam epitaxy interface mid-wave infrared

Received: 10 May 2022
Revised: 18 July 2022
Accepted manuscript online: 05 August 2022

PACS:	85.60.Gz	(Photodetectors (including infrared and CCD detectors))
	68.65.Cd	(Superlattices)
	02.70.-c	(Computational techniques; simulations)

Fund: Project supported by the Beijing Scholars Program (Grant No. 74A2111113), the Research Project of Beijing Education Committee (Grant No. KM202111232019), the National Natural Science Foundation of China (Grant No. 62105039), and the Research Project of Beijing Information Science & Technology University (Grant No. 2022XJJ07).

Corresponding Authors: Lian-Qing Zhu, Dong-Liang Zhang
E-mail: lqzhu_bistu@sina.com;zdl_photonics@bistu.edu.cn

Cite this article:

Zhaojun Liu(刘昭君), Lian-Qing Zhu(祝连庆), Xian-Tong Zheng(郑显通), Yuan Liu(柳渊), Li-Dan Lu(鹿利单), and Dong-Liang Zhang(张东亮) Interface effect on superlattice quality and optical properties of InAs/GaSb type-II superlattices grown by molecular beam epitaxy 2022 Chin. Phys. B 31 128503

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Interface effect on superlattice quality and optical properties of InAs/GaSb type-II superlattices grown by molecular beam epitaxy

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