1 Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; 2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China; 3 Beijing Academy of Quantum Information Sciences, Beijing 100193, China
Abstract We investigate a strain compensation method for the growth of complex interband cascade laser structures. For thick InAs/AlSb superlattice clad layers, the sublayer thicknesses were adjusted so that the tensile strain energy in the InAs sublayer was equal to the compressive strain energy in the AlSb sublayer. For the four-constituent active region, as the compressive strain in the Ga0.65In0.35Sb alloy layer was large, a tensile strain was incorporated in the chirped InAs/AlSb superlattice region for strain compensation to the Ga0.65In0.35Sb alloy. A laser structure of thickness 6 μm was grown on the GaSb substrate by molecular beam epitaxy. The wafer exhibited good surface morphology and high crystalline quality.
(Molecular, atomic, ion, and chemical beam epitaxy)
Fund: Project supported by the National Key Research and Development Project of China (Grant No. 2018YFB2200500), the National Natural Science Foundation of China (Grant Nos. 61790583, 61835011, 62174158 and 61991431), Youth Innovation Promotion Association of the Chinese Academy of Sciences (Grant No. 2021107), and the Key Program of the Chinese Academy of Sciences (Grant No. XDB43000000).
Corresponding Authors:
Shu-Man Liu, Ning Zhuo
E-mail: liusm@semi.ac.cn;zhuoning@semi.ac.cn
Cite this article:
Chao Ning(宁超), Tian Yu(于天), Rui-Xuan Sun(孙瑞轩), Shu-Man Liu(刘舒曼), Xiao-Ling Ye(叶小玲), Ning Zhuo(卓宁), Li-Jun Wang(王利军), Jun-Qi Liu(刘俊岐), Jin-Chuan Zhang(张锦川), Shen-Qiang Zhai(翟慎强), and Feng-Qi Liu(刘峰奇) Strain compensated type II superlattices grown by molecular beam epitaxy 2023 Chin. Phys. B 32 046802
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