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Chin. Phys. B, 2022, Vol. 31(6): 068502    DOI: 10.1088/1674-1056/ac4f55

An electromagnetic simulation assisted small signal modeling method for InP double-heterojunction bipolar transistors

Yanzhe Wang(王彦喆)1,2, Wuchang Ding(丁武昌)2, Yongbo Su(苏永波)2, Feng Yang(杨枫)2, Jianjun Ding(丁建君)1,2, Fugui Zhou(周福贵)1,2, and Zhi Jin(金智)2,†
1 School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China;
2 High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Abstract  We present a convenient and practical electromagnetic (EM) assisted small-signal model extraction method for InP double-heterojunction bipolar transistors (DHBTs). Parasitic parameters of pad and electrode fingers are extracted by means of 3D EM simulation. The simulations with a new excitation scheme are closer to the actual on-wafer measurement conditions. Appropriate simulation settings are calibrated by comparing measurement and simulation of OPEN and SHORT structures. A simpler $\pi $-type topology is proposed for the intrinsic model, in which the base-collector resistance $R_\mu$, output resistance $R_{\rm ce}$ are deleted, and a capacitance $C_{\rm ce}$ is introduced to characterize the capacitive parasitic caused by the collector finger and emitter ground bar. The intrinsic parameters are all extracted by exact equations that are derived from rigorous mathematics. The method is characterized by its ease of implementation and the explicit physical meaning of extraction procedure. Experimental validations are performed at four biases for three InGaAs/InP HBT devices with $0.8\times 7 $μm, 0$.8\times 10 $μm and $0.8\times 15 $μm emitter, and quite good fitting results are obtained in the range of 0.1-50 GHz.
Keywords:  electromagnetic simulation      InP double-heterojunction bipolar transistor      parameter extraction      small-signal modeling  
Received:  11 November 2021      Revised:  31 December 2021      Accepted manuscript online:  27 January 2022
PACS:  85.30.Tv (Field effect devices)  
  73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))  
  85.30.-z (Semiconductor devices)  
Corresponding Authors:  Zhi Jin     E-mail:

Cite this article: 

Yanzhe Wang(王彦喆), Wuchang Ding(丁武昌), Yongbo Su(苏永波), Feng Yang(杨枫),Jianjun Ding(丁建君), Fugui Zhou(周福贵), and Zhi Jin(金智) An electromagnetic simulation assisted small signal modeling method for InP double-heterojunction bipolar transistors 2022 Chin. Phys. B 31 068502

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