Sub-stochiometric MoOx by radio-frequency magnetron sputtering as hole-selective passivating contacts for silicon heterojunction solar cells
Xiufang Yang(杨秀芳)1,2,3,4, Shengsheng Zhao(赵生盛)1,2,3,4, Qian Huang(黄茜)1,2,3,4,‡, Cao Yu(郁超)5, Jiakai Zhou(周佳凯)1,2,3,4, Xiaoning Liu(柳晓宁)1,2,3,4, Xianglin Su(苏祥林)1,2,3,4, Ying Zhao(赵颖)1,2,3,4, and Guofu Hou(侯国付)1,2,3,4,†
1 Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin 300350, China; 2 Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, Tianjin 300350, China; 3 Collaborative Innovation Center of Chemical Science and Engineering(Tianjin), Tianjin 300072, China; 4 Engineering Center of Thin Film Photoelectronic Technology of Ministry of Education, Tianjin 300350, China; 5 Suzhou Maxwell Automation Equipment Co. Ltd, Suzhou 215299, China
Abstract The silicon heterojunction (SHJ) solar cell has long been considered as one of the most promising candidates for the next-generation PV market. Transition metal oxides (TMOs) show good carrier selectivity when combined with c-Si solar cells. This has led to the rapid demonstration of the remarkable potential of TMOs (especially MoOx) with high work function to replace the p-type a-Si:H emitting layer. MoOx can induce a strong inversion layer on the interface of n-type c-Si, which is beneficial to the extraction and conduction of holes. In this paper, the radio-frequency (RF) magnetron sputtering is used to deposit MoOx films. The optical, electrical and structural properties of MoOx films are measured and analyzed, with focus on the inherent compositions and work function. Then the MoOx films are applied into SHJ solar cells. When the MoOx works as a buffer layer between ITO/p-a-Si:H interface in the reference SHJ solar cell, a conversion efficiency of 19.1% can be obtained. When the MoOx is used as a hole transport layer (HTL), the device indicates a desirable conversion efficiency of 17.5%. To the best of our knowledge, this current efficiency is the highest one for the MoOx film as HTL by RF sputtering.
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 62074084), the National Key Research and Development Program of China (Grant No. 2018YFB1500402), and Key Research and Development Program of Hebei Province, China (Grant No. 20314303D).
Xiufang Yang(杨秀芳), Shengsheng Zhao(赵生盛), Qian Huang(黄茜), Cao Yu(郁超), Jiakai Zhou(周佳凯), Xiaoning Liu(柳晓宁), Xianglin Su(苏祥林),Ying Zhao(赵颖), and Guofu Hou(侯国付) Sub-stochiometric MoOx by radio-frequency magnetron sputtering as hole-selective passivating contacts for silicon heterojunction solar cells 2022 Chin. Phys. B 31 098401
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