1 Laboratory of Information Functional Materials and Devices, School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China; 2 College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China; 3 National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
Abstract The symmetric Ti/Au bi-layer point electrodes have been successfully patterned on the β-Ga2O3 films which are prepared by metal-organic chemical vapor deposition (MOCVD) and the γ-CuI films which are prepared by spin-coating. The fabricated heterojunction has a large open circuit voltage (Voc) of 0.69 V, desired for achieving self-powered operation of a photodetector. Irradiated by 254-nm ultraviolet (UV) light, when the bias voltage is -5 V, the dark current (Idark) of the device is 0.47 pA, the photocurrent (Iphoto) is -50.93 nA, and the photo-to-dark current ratio (Iphoto/Idark) reaches about 1.08×105. The device has a stable and fast response speed in different wavelengths, the rise time (τr) and decay time (τd) are 0.762 s and 1.741 s under 254-nm UV light illumination, respectively. While the τr and τd are 10.709 s and 7.241 s under 365-nm UV light illumination, respectively. The time-dependent (I-t) response (photocurrent in the order of 10-10 A) can be clearly distinguished at a small light intensity of 1 μW·cm-2. The internal physical mechanism affecting the device performances is discussed by the band diagram and charge carrier transfer theory.
Wei-Ming Sun(孙伟铭), Bing-Yang Sun(孙兵阳), Shan Li(李山), Guo-Liang Ma(麻国梁), Ang Gao(高昂), Wei-Yu Jiang(江为宇), Mao-Lin Zhang(张茂林), Pei-Gang Li(李培刚), Zeng Liu(刘增), and Wei-Hua Tang(唐为华) A broadband self-powered UV photodetector of a β-Ga2O3/γ-CuI p-n junction 2022 Chin. Phys. B 31 024205
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Charge-mediated voltage modulation of magnetism in Hf0.5Zr0.5O2/Co multiferroic heterojunction Jia Chen(陈佳), Peiyue Yu(于沛玥), Lei Zhao(赵磊), Yanru Li(李彦如), Meiyin Yang(杨美音), Jing Xu(许静), Jianfeng Gao(高建峰), Weibing Liu(刘卫兵), Junfeng Li(李俊峰), Wenwu Wang(王文武), Jin Kang(康劲), Weihai Bu(卜伟海), Kai Zheng(郑凯), Bingjun Yang(杨秉君), Lei Yue(岳磊), Chao Zuo(左超), Yan Cui(崔岩), and Jun Luo(罗军). Chin. Phys. B, 2023, 32(2): 027504.
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