| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Design and research of normally-off β-Ga2O3/4H-SiC heterojunction field effect transistor |
| Meixia Cheng(程梅霞)1, Suzhen Luan(栾苏珍)1,†, Hailin Wang(王海林)1, and Renxu Jia(贾仁需)2 |
1 The Key Laboratory of Heterogeneous Network Convergence Communication, Xi'an University of Science and Technology, Xi'an 710600, China;
2 The Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China |
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Abstract Ga$_{2}$O$_{3}$ is difficult to achieve p-type doping, which further hinders the development of Ga$_{2}$O$_{3}$-based power devices and is not conducive to the development of new devices with high power density and low power consumption. This paper expounds a $\beta $-Ga$_{2}$O$_{3}$/4H-SiC heterojunction lateral metal-oxide-semiconductor field-effect transistor (HJFET), which can make better use of the characteristics of PN junction by adding p-doped SiC in the channel region. Compared with the conventional devices, the threshold voltage of the heterojunction metal-oxide-semiconductor field-effect transistor (MOSFET) is greatly improved, and normally-off operation is realized, showing a positive threshold voltage of 0.82 V. Meanwhile, the off-state breakdown voltage of the device is up to 1817 V, and the maximum transconductance is 15.3 mS/mm. The optimal PFOM is obtained by simulating the thickness, length and doping of the SiC in each region of the epitaxial layer. This structure provides a feasible idea for high performance $\beta $-Ga$_{2}$O$_{3 }$ MOSFET.
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Received: 10 September 2022
Revised: 31 October 2022
Accepted manuscript online: 17 November 2022
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PACS:
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73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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| Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61974119 and 61834005). |
Corresponding Authors:
Suzhen Luan
E-mail: szluan@xust.edu.cn
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Cite this article:
Meixia Cheng(程梅霞), Suzhen Luan(栾苏珍), Hailin Wang(王海林), and Renxu Jia(贾仁需) Design and research of normally-off β-Ga2O3/4H-SiC heterojunction field effect transistor 2023 Chin. Phys. B 32 037302
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