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Chin. Phys. B, 2023, Vol. 32(3): 037302    DOI: 10.1088/1674-1056/aca39c

Design and research of normally-off β-Ga2O3/4H-SiC heterojunction field effect transistor

Meixia Cheng(程梅霞)1, Suzhen Luan(栾苏珍)1,†, Hailin Wang(王海林)1, and Renxu Jia(贾仁需)2
1 The Key Laboratory of Heterogeneous Network Convergence Communication, Xi'an University of Science and Technology, Xi'an 710600, China;
2 The Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
Abstract  Ga$_{2}$O$_{3}$ is difficult to achieve p-type doping, which further hinders the development of Ga$_{2}$O$_{3}$-based power devices and is not conducive to the development of new devices with high power density and low power consumption. This paper expounds a $\beta $-Ga$_{2}$O$_{3}$/4H-SiC heterojunction lateral metal-oxide-semiconductor field-effect transistor (HJFET), which can make better use of the characteristics of PN junction by adding p-doped SiC in the channel region. Compared with the conventional devices, the threshold voltage of the heterojunction metal-oxide-semiconductor field-effect transistor (MOSFET) is greatly improved, and normally-off operation is realized, showing a positive threshold voltage of 0.82 V. Meanwhile, the off-state breakdown voltage of the device is up to 1817 V, and the maximum transconductance is 15.3 mS/mm. The optimal PFOM is obtained by simulating the thickness, length and doping of the SiC in each region of the epitaxial layer. This structure provides a feasible idea for high performance $\beta $-Ga$_{2}$O$_{3 }$ MOSFET.
Keywords:  MOSFET      heterojunction      threshold voltage  
Received:  10 September 2022      Revised:  31 October 2022      Accepted manuscript online:  17 November 2022
PACS:  73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61974119 and 61834005).
Corresponding Authors:  Suzhen Luan     E-mail:

Cite this article: 

Meixia Cheng(程梅霞), Suzhen Luan(栾苏珍), Hailin Wang(王海林), and Renxu Jia(贾仁需) Design and research of normally-off β-Ga2O3/4H-SiC heterojunction field effect transistor 2023 Chin. Phys. B 32 037302

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