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Chin. Phys. B, 2022, Vol. 31(3): 038501    DOI: 10.1088/1674-1056/ac1b8b
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Graphene-based heterojunction for enhanced photodetectors

Haiting Yao(姚海婷)1, Xin Guo(郭鑫)1,†, Aida Bao(鲍爱达)1, Haiyang Mao(毛海央)2, Youchun Ma(马游春)1, and Xuechao Li(李学超)1
1 National Key Laboratory for Electronic Measurement Technology, North University of China, Taiyuan 030051, China;
2 Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China
Abstract  Graphene has high light transmittance of 97.7% and ultrafast carrier mobility, which means it has attracted widespread attention in two-dimensional materials. However, the optical absorptivity of single-layer graphene is only 2.3%, and the corresponding photoresponsivity is difficult to produce at normal light irradiation. And the low on—off ratio resulting from the zero bandgap makes it unsuitable for many electronic devices, hindering potential development. The graphene-based heterojunction composed of graphene and other materials has outstanding optical and electrical properties, which can mutually modify the defects of both the graphene and material making it then suitable for optoelectronic devices. In this review, the advantages of graphene-based heterojunctions in the enhancement of the performance of photodetectors are reviewed. Firstly, we focus on the photocurrent generation mechanism of a graphene-based heterojunction photodetector, especially photovoltaic, photoconduction and photogating effects. Secondly, the classification of graphene-based heterojunctions in different directions is summarized. Meanwhile, the latest research progress of graphene-transition metal dichalcogenide (TMD) heterojunction photodetectors with excellent performance in graphene-based heterostructures is introduced. Finally, the difficulties faced by the existing technologies of graphene-based photodetectors are discussed, and further prospects are proposed.
Keywords:  graphene-based heterojunction photodetector      photocurrent generation mechanism      classification of graphene-based heterojunction      graphene—transition metal dichalcogenide (TMD) heterojunction  
Received:  16 June 2021      Revised:  26 July 2021      Accepted manuscript online:  07 August 2021
PACS:  85.60.Bt (Optoelectronic device characterization, design, and modeling)  
  85.60.Gz (Photodetectors (including infrared and CCD detectors))  
  73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)  
  74.25.Gz (Optical properties)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61771467), Shanxi Scholarship Council of China (Grant No. 2020-112), Scientific and Technological Innovation Programs of Higher Education Institutions in Shanxi, China (Grant Nos. 2020L0268 and 2020L0307), and Science Foundation of North University of China (Grant No. XJJ201915).
Corresponding Authors:  Xin Guo     E-mail:

Cite this article: 

Haiting Yao(姚海婷), Xin Guo(郭鑫), Aida Bao(鲍爱达), Haiyang Mao(毛海央),Youchun Ma(马游春), and Xuechao Li(李学超) Graphene-based heterojunction for enhanced photodetectors 2022 Chin. Phys. B 31 038501

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