A method to extend wavelength into middle-wavelength infrared based on InAsSb/(Al)GaSb interband transition quantum well infrared photodetector

doi:10.1088/1674-1056/ab6969

Abstract We present a method to extend the operating wavelength of the interband transition quantum well photodetector from an extended short-wavelength infrared region to a middle-wavelength infrared region. In the modified InAsSb quantum well, GaSb is replaced with AlSb/AlGaSb, the valence band of the barrier material is lowered, the first restricted energy level is higher than the valence band of the barrier material, the energy band structure forms type-II structure. The photocurrent spectrum manifest that the fabricated photodetector exhibits a response range from 1.9 μm to 3.2 μm with two peaks at 2.18 μm and 3.03 μm at 78 K.

Keywords: photodetector energy band calculation InAsSb/AlSb/AlGaSb quantum well interband transition

Received: 25 November 2019
Revised: 27 December 2019
Accepted manuscript online:

PACS:	81.05.Ea	(III-V semiconductors)
	85.30.De	(Semiconductor-device characterization, design, and modeling)
	85.35.Be	(Quantum well devices (quantum dots, quantum wires, etc.))
	85.60.Bt	(Optoelectronic device characterization, design, and modeling)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11574362, 61210014, 11374340, and 11474205), the Innovative Clean-Energy Research and Application Program of Beijing Municipal Science and Technology Commission of China (Grant No. Z151100003515001), and the National Key Technology R&D Program of China (Grant No. 2016YFB0400302).

Corresponding Authors: Lu Wang
E-mail: lwang@iphy.ac.cn

Cite this article:

Xuan-Zhang Li(李炫璋), Ling Sun(孙令), Jin-Lei Lu(鲁金蕾), Jie Liu(刘洁), Chen Yue(岳琛), Li-Li Xie(谢莉莉), Wen-Xin Wang(王文新), Hong Chen(陈弘), Hai-Qiang Jia(贾海强), Lu Wang(王禄) A method to extend wavelength into middle-wavelength infrared based on InAsSb/(Al)GaSb interband transition quantum well infrared photodetector 2020 Chin. Phys. B 29 038504

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A method to extend wavelength into middle-wavelength infrared based on InAsSb/(Al)GaSb interband transition quantum well infrared photodetector

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