Please wait a minute...
Chin. Phys. B, 2022, Vol. 31(3): 038504    DOI: 10.1088/1674-1056/ac3224

Facile sensitizing of PbSe film for near-infrared photodetector by microwave plasma processing

Kangyi Zhao(赵康伊)1, Shuanglong Feng(冯双龙)2,†, Chan Yang(杨婵)2, Jun Shen(申钧)2, and Yongqi Fu(付永启)1,‡
1 School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China;
2 Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, China
Abstract  High quality PbSe film was first fabricated by a thermal evaporation method, and then the effect of plasma sensitization on the PbSe film was systemically investigated. Typical detectivity and significant photosensitivity are achieved in the PbSe-based photodetector, reaching maximum values of 7.6×109 cm·Hz1/2/W and 1.723 A/W, respectively. Compared with thermal annealing, plasma sensitization makes the sensitization easier and significantly improves the performance.
Keywords:  PbSe film      infrared photodetector      plasma processing  
Received:  09 March 2021      Revised:  23 September 2021      Accepted manuscript online:  22 October 2021
PACS:  77.55.-g (Dielectric thin films)  
  07.57.-c (Infrared, submillimeter wave, microwave and radiowave instruments and equipment)  
  52.77.Dq (Plasma-based ion implantation and deposition)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61605207, 61704172, and 61705229), the Key Research and Development Plan of the Ministry of Science and Technology of China (Grant No. 2017YFE0131900), the Western Light Program of the Chinese Academy of Sciences, and Youth Innovation Promotion Association of Chinese Academy of Sciences (Grant No. 2018416).
Corresponding Authors:  Shuanglong Feng, Yongqi Fu     E-mail:;

Cite this article: 

Kangyi Zhao(赵康伊), Shuanglong Feng(冯双龙), Chan Yang(杨婵),Jun Shen(申钧), and Yongqi Fu(付永启) Facile sensitizing of PbSe film for near-infrared photodetector by microwave plasma processing 2022 Chin. Phys. B 31 038504

[1] Wu D, Guo J, Du J, Xia C, Zeng L, Tian Y, Shi Z, Tian Y, Li X J, Tsang Y H and Jie J 2019 ACS Nano 13 9907
[2] Wu D, Jia C, Shi F, Zeng L, Lin P, Dong L, Shi Z, Tian Y, Li X and Jie J 2020 J. Mater. Chem. A 8 3632
[3] Yang C, Zhou D H, Yang J, Tang L L, Leng C Q and Shen J 2020 Phys. E 124 114216
[4] Li Q, Chen X S and Lu W 2019 Acta Phys. Sin. 68 120701 (in Chinese)
[5] Zheng J J, Wang Y R, Yu K H, Xu X X, Sheng X X, Hu E T and Wei W 2018 Acta Phys. Sin. 67 118502 (in Chinese)
[6] Khan A U and Kasha M 1979 Proc. Natl. Acad. Sci. USA 76 6047
[7] Ivanou D K, Ivanova Y A, Poznyak S K, Starykevich M, Ferreira M, Mendes A and Streltsov E A 2017 Electrochim. Acta 249 369
[8] Torquemada M C, Villamayor V, Rodrigo M T, Vergara G, Sanchez F J, Almazan R, Verdu M, Rodriguez P, Gomez L J and Montojo T M 2003 Infrared Technol. Appl. XXIX 5074 592
[9] Weng B, Zhao F, Ma J, Yu G, Xu J and Shi Z 2010 Appl. Phys. Lett. 96 251911
[10] Muñoz A, Meléndez J, Torquemada M C, Rodrigo M T, Cebrián J, De Castro A J, Meneses J, Ugarte M, López F, Vergara G, Hernández J L, Martín J M, Adell L and Montojo M T 1998 Thin Solid Films 317 425
[11] Sierra C, Torquemada M C, Vergara G, Rodrigo M T, Gutiérrez C, Pérez G, Génova I, Catalán I, Gómez L J, Villamayor V, Ávarez M, Fernández D, Magaz M T and Almazán R M 2014 Sens. Actuators B:Chem. 190 464
[12] Kumar P, Pfeffer M, Berthold C and Eibl O 2018 J. Alloys Compd. 735 1654
[13] Weng B, Qiu J, Zhao L, Yuan Z, Chang C and Shi Z 2014 Appl. Phys. 104 121111
[14] McDowell L L, Qiu J, Weng B and Shi Z 2019 Cryst. Growth Des. 19 2253
[15] Yang H, Li X, Wang G and Zheng J 2018 Coatings 8 444
[16] Ren Y, Dai T, He B and Liu X 2019 Mater. Lett. 236 194
[17] Zhu T, Zheng L, Yao X, Liu L, Huang F, Cao Y and Gong X 2019 ACS Appl. Mater. Interfaces 11 9205
[18] Ghorban Shiravizadeh A, Elahi S M, Sebt S A and Yousefi R 2018 J. Appl. Phys. 123 083102
[19] Ren Y X, Dai T J, Luo W B and Liu X Z 2018 J. Alloys Compd. 753 6
[20] Humphrey J N and Petritz R L 1957 Phys. Rev. 105 1736
[21] Zhao L, Qiu J, Weng B, Chang C, Yuan Z and Shi Z 2014 J. Appl. Phys. 115 084502
[22] Shivkumar G, Tholeti S S, Alrefae M A, Fisher T S and Alexeenko A A 2016 J. Appl. Phys. 119 113301
[23] Meyyappan M 2009 J. Phys. D:Appl. Phys. 42 213001
[24] Liu Y, Jiang G, Sun S, Xu B, Zhou J, Zhang Y and Yao J 2017 J. Electroanal. Chem. 804 212
[25] Kar R, Patel N N, Chand N, Shilpa R K, Dusane R O, Patil D S and Sinha S 2016 Carbon 106 233
[26] Corona-Gomez J, Shiri S, Mohammadtaheri M and Yang Q 2017 Surf. Coatings Technol. 332 120
[1] Progress in quantum well and quantum cascade infrared photodetectors in SITP
Xiaohao Zhou(周孝好), Ning Li(李宁), Wei Lu(陆卫). Chin. Phys. B, 2019, 28(2): 027801.
[2] Recent progress of infrared photodetectors based on lead chalcogenide colloidal quantum dots
Jinming Hu(胡津铭), Yuansheng Shi(史源盛), Zhenheng Zhang(张珍衡), Ruonan Zhi(智若楠), Shengyi Yang(杨盛谊), Bingsuo Zou(邹炳锁). Chin. Phys. B, 2019, 28(2): 020701.
[3] Room-temperature infrared photodetectors with hybrid structure based on two-dimensional materials
Tiande Liu(刘天德), Lei Tong(童磊), Xinyu Huang(黄鑫宇), Lei Ye(叶镭). Chin. Phys. B, 2019, 28(1): 017302.
[4] Optoelectronic properties of single-crystalline GaInAsSb quaternary alloy nanowires
Meng-Zi Li(李梦姿), Xin-Liang Chen(陈新亮), Hong-Lai Li(李洪来), Xue-Hong Zhang(张学红), Zhao-Yang Qi(祁朝阳), Xiao-Xia Wang(王晓霞), Peng Fan(范鹏), Qing-Lin Zhang(张清林), Xiao-Li Zhu(朱小莉), Xiu-Juan Zhuang(庄秀娟). Chin. Phys. B, 2018, 27(7): 078101.
[5] Simulation of near-infrared photodiode detectors based on β-FeSi2/4H-SiC heterojunction
Pu Hong-Bin (蒲红斌), He Xin (贺欣), Quan Ru-Dai (全汝岱), Cao Lin (曹琳), Chen Zhi-Ming (陈治明). Chin. Phys. B, 2013, 22(3): 037301.
No Suggested Reading articles found!