Facile sensitizing of PbSe film for near-infrared photodetector by microwave plasma processing

doi:10.1088/1674-1056/ac3224

Abstract High quality PbSe film was first fabricated by a thermal evaporation method, and then the effect of plasma sensitization on the PbSe film was systemically investigated. Typical detectivity and significant photosensitivity are achieved in the PbSe-based photodetector, reaching maximum values of 7.6×10⁹ cm·Hz^1/2/W and 1.723 A/W, respectively. Compared with thermal annealing, plasma sensitization makes the sensitization easier and significantly improves the performance.

Keywords: PbSe film infrared photodetector plasma processing

Received: 09 March 2021
Revised: 23 September 2021
Accepted manuscript online: 22 October 2021

PACS:	77.55.-g	(Dielectric thin films)
	07.57.-c	(Infrared, submillimeter wave, microwave and radiowave instruments and equipment)
	52.77.Dq	(Plasma-based ion implantation and deposition)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61605207, 61704172, and 61705229), the Key Research and Development Plan of the Ministry of Science and Technology of China (Grant No. 2017YFE0131900), the Western Light Program of the Chinese Academy of Sciences, and Youth Innovation Promotion Association of Chinese Academy of Sciences (Grant No. 2018416).

Corresponding Authors: Shuanglong Feng, Yongqi Fu
E-mail: fengshuanglong@cigit.ac.cn;yqfu@uestc.edu.cn

Cite this article:

Kangyi Zhao(赵康伊), Shuanglong Feng(冯双龙), Chan Yang(杨婵),Jun Shen(申钧), and Yongqi Fu(付永启) Facile sensitizing of PbSe film for near-infrared photodetector by microwave plasma processing 2022 Chin. Phys. B 31 038504

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Facile sensitizing of PbSe film for near-infrared photodetector by microwave plasma processing

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