Improving the performance of a GaAs nanowire photodetector using surface plasmon polaritons
Xiaotian Zhu(朱笑天)1, Bingheng Meng(孟兵恒)1, Dengkui Wang(王登魁)1,†, Xue Chen(陈雪)1, Lei Liao(廖蕾)2, Mingming Jiang(姜明明)3, and Zhipeng Wei(魏志鹏)1,‡
1 State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China; 2 State Key Laboratory for Chemo/Biosensing and Chemometrics, School of Physics and Electronics, Hunan University, Changsha 410082, China; 3 College of Science, Nanjing University of Aeronautics and Astronautics, Jiangsu 210016, China
Abstract GaAs nanowires (NWs) are ideal materials for preparing near-infrared photodetectors owing to their high charge carrier mobility and direct band gap. Although the performance of GaAs NW photodetectors can be enhanced by surface passivation or doping, it still cannot meet the requirement for applications. In this paper we propose a method to greatly improve the performances of GaAs NW photodetectors by hot-hole injection via surface plasmon polaritons. In this case, the responsivity of a single GaAs NW photodetector is increased by a fact of 3.2 to 6.56 A· W-1 by attaching capsule-like Au nanoparticles to its surface. This research uses an efficient route to improve the NW photocurrent, which is also important for the development of a high-performance near-infrared NW photodetecor.
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 62074018, 12074045, 61904017 and 11804335), the Developing Project of Science and Technology of Jilin Province, China (Grant No. 20200301052RQ), and the Project of Education Department of Jilin Province, China (Grant Nos. JJKH20200763KJ and JJKH20210831KJ).
Xiaotian Zhu(朱笑天), Bingheng Meng(孟兵恒), Dengkui Wang(王登魁), Xue Chen(陈雪), Lei Liao(廖蕾), Mingming Jiang(姜明明), and Zhipeng Wei(魏志鹏) Improving the performance of a GaAs nanowire photodetector using surface plasmon polaritons 2022 Chin. Phys. B 31 047801
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