Deep-ultraviolet and visible dual-band photodetectors by integrating Chlorin e6 with Ga2O3
Yue Zhao(赵越), Jin-Hao Zang(臧金浩), Xun Yang(杨珣)†, Xue-Xia Chen(陈雪霞), Yan-Cheng Chen(陈彦成), Kai-Yong Li(李凯永), Lin Dong(董林)‡, and Chong-Xin Shan(单崇新)§
Key Laboratory of Materials Physics, Ministry of Education, Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
Abstract Gallium oxide (Ga2O3) is a promising material for deep-ultraviolet (DUV) detection. In this work, Chlorin e6 (Ce6) has been integrated with Ga2O3 to achieve a DUV and visible dual-band photodetector, which can achieve multiple target information and improve the recognition rate. The photodetector shows two separate response bands at 268 nm and 456 nm. The DUV response band has a responsivity of 9.63 A/W with a full width at half maximum (FWHM) of 54.5 nm; the visible response band has a responsivity of 1.17 A/W with an FWHM of 45.3 nm. This work may provide a simple way to design and fabricate photodetectors with dual-band response.
Corresponding Authors:
Xun Yang, Lin Dong, Chong-Xin Shan
E-mail: yangxun9013@163.com;ldong@zzu.edu.cn;cxshan@zzu.edu.cn
Cite this article:
Yue Zhao(赵越), Jin-Hao Zang(臧金浩), Xun Yang(杨珣), Xue-Xia Chen(陈雪霞), Yan-Cheng Chen(陈彦成), Kai-Yong Li(李凯永), Lin Dong(董林), and Chong-Xin Shan(单崇新) Deep-ultraviolet and visible dual-band photodetectors by integrating Chlorin e6 with Ga2O3 2021 Chin. Phys. B 30 078504
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