High performance silicon-based GeSn p-i-n photodetectors for short-wave infrared application

doi:10.1088/1674-1056/ab4e84

Abstract An investigation of germanium-tin (GeSn) on silicon p-i-n photodetectors with a high-quality Ge_0.94Sn_0.06 absorbing layer is reported. The GeSn photodetector reached a responsivity as high as 0.45 A/W at the wavelength of 1550 nm and 0.12 A/W at the wavelength of 2 μm. A cycle annealing technology was applied to improve the quality of the epitaxial layer during the growth process by molecular beam epitaxy. A low dark-current density under 1 V reverse bias about 0.078 A/cm² was achieved at room temperature. Furthermore, the GeSn photodetector could detect a wide spectrum region and the cutoff wavelength reached to about 2.3 μm. This work has great importance in silicon-based short-wave infrared detection.

Keywords: GeSn alloy molecular beam epitaxy photodetector cycle annealing

Received: 04 September 2019
Revised: 27 September 2019
Accepted manuscript online:

PACS:	85.60.Gz	(Photodetectors (including infrared and CCD detectors))
	81.40.Ef	(Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)
	61.66.Dk	(Alloys )
	68.55.ag	(Semiconductors)

Fund: Project supported by the National Key Research and Development Program of China (Grant No. 2018YFB2200500), the National Natural Science Foundation of China (Grant Nos. 61675195, 61934007, and 61974170), Opened Fund of the State Key Laboratory of Integrated Optoelectronics, China (Grant No. IOSKL2018KF17), and Beijing Natural Science Foundation, China (Grant No. 4162063).

Corresponding Authors: Chuanbo Li
E-mail: cbli@muc.edu.cn

Cite this article:

Yue Zhao(赵越), Nan Wang(王楠), Kai Yu(余凯), Xiaoming Zhang(张晓明), Xiuli Li(李秀丽), Jun Zheng(郑军), Chunlai Xue(薛春来), Buwen Cheng(成步文), Chuanbo Li(李传波) High performance silicon-based GeSn p-i-n photodetectors for short-wave infrared application 2019 Chin. Phys. B 28 128501

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High performance silicon-based GeSn p-i-n photodetectors for short-wave infrared application

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