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Special Issue:
TOPICAL REVIEW — Celebrating 30 Years of Chinese Physics B
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| TOPICAL REVIEW—Celebrating 30 Years of Chinese Physics B |
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Molecular beam epitaxy growth of quantum devices |
| Ke He(何珂)1,2,3,† |
1 State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China;
2 Frontier Science Center for Quantum Information, Beijing 100084, China;
3 Beijing Institute of Quantum Information Science, Beijing 100193, China |
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Abstract The inherent fragility and surface/interface-sensitivity of quantum devices demand fabrication techniques under very clean environment. Here, I briefly introduces several techniques based on molecular beam epitaxy growth on pre-patterned substrates which enable us to directly prepare in-plane nanostructures and heterostructures in ultrahigh vacuum. The molecular beam epitaxy-based fabrication techniques are especially useful in constructing the high-quality devices and circuits for solid-state quantum computing in a scalable way.
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Received: 05 August 2022
Revised: 11 November 2022
Accepted manuscript online: 29 November 2022
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PACS:
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68.65.-k
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(Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties)
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68.55.-a
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(Thin film structure and morphology)
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81.07.-b
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(Nanoscale materials and structures: fabrication and characterization)
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03.67.Lx
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(Quantum computation architectures and implementations)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant No. 92065206). |
Corresponding Authors:
Ke He
E-mail: kehe@tsinghua.edu.cn
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Cite this article:
Ke He(何珂) Molecular beam epitaxy growth of quantum devices 2022 Chin. Phys. B 31 126804
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