Semiconductor-metal transition in GaAs nanowires under high pressure

doi:10.1088/1674-1056/28/7/076401

Abstract

We investigate the structural phase transitions and electronic properties of GaAs nanowires under high pressure by using synchrotron x-ray diffraction and infrared reflectance spectroscopy methods up to 26.2 GPa at room temperature. The zinc-blende to orthorhombic phase transition was observed at around 20.0 GPa. In the same pressure range, pressure-induced metallization of GaAs nanowires was confirmed by infrared reflectance spectra. The metallization originates from the zinc-blende to orthorhombic phase transition. Decompression results demonstrated that the phase transition from zinc-blende to orthorhombic and the pressure-induced metallization are reversible. Compared to bulk materials, GaAs nanowires show larger bulk modulus and enhanced transition pressure due to the size effects and high surface energy.

Keywords: GaAs nanowires high pressure structural transition x-ray diffraction

Received: 18 February 2019
Revised: 06 April 2019
Accepted manuscript online:

PACS:	64.70.Nd	(Structural transitions in nanoscale materials)
	91.60.Gf	(High-pressure behavior)
	63.22.Gh	(Nanotubes and nanowires)
	61.05.cp	(X-ray diffraction)

Fund:

Project supported by the National Key R&D Program of China (Grant No. 2018YFA0305900), the National Natural Science Foundation of China (Grant No. 11604116), Beijing Municipal Natural Science Foundation, China (Grant No. 1192017), and Youth Innovation Promotion Association, Chinese Academy of Sciences (Grant No. 2017156).

Corresponding Authors: Peng Wang, Dong Pan
E-mail: wangpengtrrs@jlu.edu.cn;pandong@semi.ac.cn

Cite this article:

Yi-Lan Liang(梁艺蓝), Zhen Yao(姚震), Xue-Tong Yin(殷雪彤), Peng Wang(王鹏), Li-Xia Li(李利霞), Dong Pan(潘东), Hai-Yan Li(李海燕), Quan-Jun Li(李全军), Bing-Bing Liu(刘冰冰), Jian-Hua Zhao(赵建华) Semiconductor-metal transition in GaAs nanowires under high pressure 2019 Chin. Phys. B 28 076401

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