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Chin. Phys. B, 2022, Vol. 31(6): 068103    DOI: 10.1088/1674-1056/ac4650

Synergistic influences of titanium, boron, and oxygen on large-size single-crystal diamond growth at high pressure and high temperature

Guang-Tong Zhou(周广通)1, Yu-Hu Mu(穆玉虎)1, Yuan-Wen Song(宋元文)1, Zhuang-Fei Zhang(张壮飞)1, Yue-Wen Zhang(张跃文)1, Wei-Xia Shen(沈维霞)1, Qian-Qian Wang(王倩倩)1, Biao Wan(万彪)1, Chao Fang(房超)1,†, Liang-Chao Chen(陈良超)1,‡, Ya-Dong Li(李亚东)2, and Xiao-Peng Jia(贾晓鹏)1
1 Key Laboratory of Material Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, China;
2 College of Electronical Information Engineering, Yangtze Normal University, Chongqing 408100, China
Abstract  The synergistic influences of boron, oxygen, and titanium on growing large single-crystal diamonds are studied using different concentrations of B2O3 in a solvent-carbon system under 5.5 GPa-5.7 GPa and 1300 ℃-1500 ℃. It is found that the boron atoms are difficult to enter into the crystal when boron and oxygen impurities are doped using B2O3 without the addition of Ti atoms. However, high boron content is achieved in the doped diamonds that were synthesized with the addition of Ti. Additionally, boron-oxygen complexes are found on the surface of the crystal, and oxygen-related impurities appear in the crystal interior when Ti atoms are added into the FeNi-C system. The results show that the introduction of Ti atoms into the synthesis cavity can effectively control the number of boron atoms and the number of oxygen atoms in the crystal. This has important scientific significance not only for understanding the synergistic influence of boron, oxygen, and titanium atoms on the growth of diamond in the earth, but also for preparing the high-concentration boron or oxygen containing semiconductor diamond technologies.
Keywords:  high pressure and high temperature (HPHT)      diamond      B2O3      Ti  
Received:  29 November 2021      Revised:  22 December 2021      Accepted manuscript online:  24 December 2021
PACS: (Diamond)  
  61.50.Ah (Theory of crystal structure, crystal symmetry; calculations and modeling)  
  81.10.Fq (Growth from melts; zone melting and refining)  
  81.05.uf (Graphite)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11804305, 12004341, 11704340, and 12004342), the Key Research Project of Higher Education Institution of Henan Province, China (Grant No. 19A140006), the Scientific and Technological Project in Henan Province, China (Grant No. 202102210198), the Natural Science Foundation of Chongqing, China (Grant No. cstc2019jcyjmsxmX0391), and the Science and Technology Research Program of Chongqing Municipal Education Commission, China (Grant No. KJQN201901405).
Corresponding Authors:  Chao Fang, Liang-Chao Chen     E-mail:;

Cite this article: 

Guang-Tong Zhou(周广通), Yu-Hu Mu(穆玉虎), Yuan-Wen Song(宋元文), Zhuang-Fei Zhang(张壮飞), Yue-Wen Zhang(张跃文), Wei-Xia Shen(沈维霞), Qian-Qian Wang(王倩倩), Biao Wan(万彪), Chao Fang(房超), Liang-Chao Chen(陈良超), Ya-Dong Li(李亚东), and Xiao-Peng Jia(贾晓鹏) Synergistic influences of titanium, boron, and oxygen on large-size single-crystal diamond growth at high pressure and high temperature 2022 Chin. Phys. B 31 068103

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